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P4SMA22A

P4SMA22A

  • 厂商:

    LITTELFUSE

  • 封装:

  • 描述:

    P4SMA22A - Silicon Avalanche Diodes - 400W Surface Mount Transient Voltage Supressors - Littelfuse

  • 数据手册
  • 价格&库存
P4SMA22A 数据手册
Silicon Avalanche Diodes 400W Surface Mount Transient Voltage Supressors RoHS FEATURES P4SMA Series • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction • Low Inductance • Excellent clamping capability • Repetition Rate (duty cycle):0.01% • Fast response time: typically less than 1.0ps from 0 Volts to V(BR) for unidirectional types • Typical IR less than 1µA above 10V • High temperature soldering: 250˚C/10 seconds at terminals DEVICES FOR BIPOLAR APPLICATION For Bidirectional use Suffix CA for types P4SMA6.8CA thru types P4SMA550CA Electrical characteristics apply in both directions MAXIMUM RATINGS AND CHARACTERISTICS @25˚C AMBIENT TEMPERATURE (unless otherwise noted) PARAMETER Peak pulse power Dissipation on 10/1000µs waveform (Note 1.2,FIG.1) Peak pulse current of on 10/1000µs waveform (Note 1, FIG.3) Peak Forward Surge Current, 8.3ms Single Half Sine-Wave Superimposed on Rated Load, (JEDEC Method)(Note2,3) Operating junction and Storage Temperature Range SYMBOL PPPM IPPM VALUE Min 400 See Table 1 UNIT Watts Agency Approvals: Recognized under the Components Program of Underwriters Laboratories. Amps Agency File Numbers: E128667 IFSM 40 Amps ORDERING INFORMATION P4SMA CA Tj, TsTG -55 to +150 °C Voltage Bi-Directional 5% Voltage Tolerance T = Tape and reeled (5000pcs) Notes: 1. Non-repetitive current pulse, per Fig.3 and derated above TA= 25˚C per Fig.2 2. Mounted on 5.0mm2 (0.03mm thick) Copper Pads to each terminal 3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle = 4 pulses per minutes maximum Mechanical Specifications: Weight: Case: Mounting Position: Polarity: Terminal: Standard Packaging: 0.002 ounce, 0.061 gram JEDEC DO214AC. Molded plastic over glass passivated junction Any Color band denoted positive end (cathode) except Bidirectional Solder plated, solderable per MIL-STD750, Method 2026 12mm tape (EIA STD RS-481) 258 w w w. l i t t e l f u s e . c o m Silicon Avalanche Diodes 400W Surface Mount Transient Voltage Supressors RoHS P4SMA Series Part Number (Bi) Device Marking Code Reverse Stand off Voltage VR (Volts) 5.80 6.40 7.02 7.78 8.55 9.40 10.20 11.10 12.80 13.60 15.30 17.10 18.80 20.50 23.10 25.60 28.20 30.80 33.30 36.80 40.20 43.60 47.80 53.00 58.10 64.10 70.10 77.80 85.50 94.00 102.00 111.00 128.00 136.00 145.00 154.00 171.00 185.00 214.00 256.00 300.00 342.00 376.00 408.00 434.00 477.00 459.00 495.00 Breakdown Voltage VBR (Volts) @ IT MIN 6.45 7.13 7.79 8.65 9.50 10.50 11.40 12.40 14.30 15.20 17.10 19.00 20.90 22.80 25.70 28.50 31.40 34.20 37.10 40.90 44.70 48.50 53.20 58.90 64.60 71.30 77.90 86.50 95.00 105.00 114.00 124.00 143.00 152.00 162.00 171.00 190.00 209.00 237.00 285.00 332.00 380.00 418.00 456.00 485.00 503.50 513.00 522.50 MAX 7.14 7.88 8.61 9.55 10.50 11.60 12.60 13.70 15.80 16.80 18.90 21.00 23.10 25.20 28.40 31.50 34.70 37.80 41.00 45.20 49.40 53.60 58.80 65.10 71.40 78.80 86.10 95.50 105.00 116.00 126.00 137.00 158.00 168.00 179.00 189.00 210.00 231.00 263.00 315.00 368.00 420.00 462.00 504.00 535.00 556.50 567.00 577.50 Test Current IT (mA) Maximum Clamping Voltage VC @ IPP (Volts) 10.5 11.3 12.1 13.4 14.5 15.6 16.7 18.2 21.2 22.5 25.5 27.7 30.6 33.2 37.5 41.4 45.7 49.9 53.9 59.3 64.8 70.1 77.0 85.0 92.0 103.0 113.0 125.0 137.0 152.0 165.0 179.0 207.0 219.0 234.0 246.0 274.0 328.0 344.0 414.0 482.0 548.0 602.0 658.0 698.0 725.0 740.0 760.0 Maximum Peak Pulse Current IPP (A) 39.0 36.3 33.9 30.6 28.3 26.3 24.6 22.5 19.3 18.2 16.1 14.8 13.4 12.3 10.9 9.9 9.0 8.2 7.6 6.9 6.3 5.8 5.3 4.8 4.5 4.0 3.6 3.3 3.0 2.7 2.5 2.3 2.0 1.9 1.8 1.7 1.5 1.3 1.2 1.0 0.9 0.8 0.7 0.6 0.6 0.6 0.5 0.5 Maximum Reverse Leakage IR @ VR (µA) 1000 500 200 50 10 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 ELECTRICAL SPECIFICATION @ Tamb 25°C Part Number (Uni) UNI P4SMA6.8A P4SMA7.5A P4SMA8.2A P4SMA9.1A P4SMA10A P4SMA11A P4SMA12A P4SMA13A P4SMA15A P4SMA16A P4SMA18A P4SMA20A P4SMA22A P4SMA24A P4SMA27A P4SMA30A P4SMA33A P4SMA36A P4SMA39A P4SMA43A P4SMA47A P4SMA51A P4SMA56A P4SMA62A P4SMA68A P4SMA75A P4SMA82A P4SMA91A P4SMA100A P4SMA110A P4SMA120A P4SMA130A P4SMA150A P4SMA160A P4SMA170A P4SMA180A P4SMA200A P4SMA220A P4SMA250A P4SMA300A P4SMA350A P4SMA400A P4SMA440A P4SMA480A P4SMA510A P4SMA530A P4SMA540A P4SMA550A P4SMA6.8CA P4SMA7.5CA P4SMA8.2CA P4SMA9.1CA P4SMA10CA P4SMA11CA P4SMA12CA P4SMA13CA P4SMA15CA P4SMA16CA P4SMA18CA P4SMA20CA P4SMA22CA P4SMA24CA P4SMA27CA P4SMA30CA P4SMA33CA P4SMA36CA P4SMA39CA P4SMA43CA P4SMA47CA P4SMA51CA P4SMA56CA P4SMA62CA P4SMA68CA P4SMA75CA P4SMA82CA P4SMA91CA P4SMA100CA P4SMA110CA P4SMA120CA P4SMA130CA P4SMA150CA P4SMA160CA P4SMA170CA P4SMA180CA P4SMA200CA P4SMA220CA P4SMA250CA P4SMA300CA P4SMA350CA P4SMA400CA P4SMA440CA P4SMA480CA P4SMA510CA P4SMA530CA P4SMA540CA P4SMA550CA 6V8A 7V5A 8V2A 9V1A 10A 11A 12A 13A 15A 16A 18A 20A 22A 24A 27A 30A 33A 36A 39A 43A 47A 51A 56A 62A 68A 75A 82A 91A 100A 110A 120A 130A 150A 160A 170A 180A 200A 220A 250A 300A 350A 400A 440A 480A 510A 530A 540A 550A BI 6V8C 7V5C 8V2C 9V1C 10C 11C 12C 13C 15C 16C 18C 20C 22C 24C 27C 30C 33C 36C 39C 43C 47C 51C 56C 62C 68C 75C 82C 91C 100C 110C 120C 130C 150C 160C 170C 180C 200C 220C 250C 300C 350C 400C 440C 480C 510C 530C 540C 550C 10 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 6 SILICON DIODE ARRAYS 259 For bidirectional type having Vrwm of 10 volts and less, the IR limit is double. The avaliable parts are "A" type only, the parts without A (VBR is ± 10%) is not avaliable. w w w. l i t t e l f u s e . c o m Silicon Avalanche Diodes 400W Surface Mount Transient Voltage Supressors RoHS P4SMA Series Ratings and Characteristic Curves TA=25˚C unless otherwise noted Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % 100 PPPM- Peak Pulse Power (KW) Non-repetitive pulse waveform shown in Fig.3 T = 25˚C A 100 75 10 P4SMA6.8P4SMA91A P4SMA100AP4SMA170A 50 1 25 0.2x0.2"(5.0x5.0mm) Copper Pad Areas 0.1 0.1µs 0.2x0.2"(5.0x5.0mm) Copper Pad Areas 0 0 25 50 75 100 125 150 175 200 TA- Ambient Temperature (˚C) 1.0µs 10µs 100µs 1.0ms 10ms td- Pulse Width (sec.) Fig. 1 Peak Pulse Power Rating 150 IPPM- Peak Pulse Current, % I RSM tr=10µsec Peak Value IPPM Half Value IPPM 2 TJ=25˚C Pulse Width(td) is defined as the point where the peak current decays to 50% of IPPM Fig. 2 Pulse Derating Curve 20000 10000 CJ-Junction Capacitance (pF) Uni-Directional 100 TJ=25˚C f=1.0MHZ Vsig=50mVp-p VR, Measured at Stand-Off Voltage, VWM 1000 Bi-Directional 50 10/1000µsec. Waveform as defined by R.E.A 100 td 0 0 1.0 2.0 3.0 4.0 10 1.0 Uni-Directional Bi-Directional 10 100 200 VWM-Reverse Stand-Off Voltage (V) Fig. 3 Pulse Waveform 100 IPSM-Peak Forward Surge Current (A) Transient Thermal Impedance (˚C/W) Fig. 4- Typical Junction Capacitance 200 TJ=TJ max. 8.3 Single Half Sine-Wave (JEDEC Method) 100 10 50 1.0 0.1 0.001 0.01 0.1 1 10 100 1000 10 1 5 10 100 tp- Pulse Duration(sec) Number of Cycles at 60Hz Fig. 5- Typ. Transient Thermal Impedance Fig. 6- Maximum Non-Repetitive Peak Forward Surge Current Uni-Directional Only 260 w w w. l i t t e l f u s e . c o m Silicon Avalanche Diodes 400W Surface Mount Transient Voltage Supressors RoHS P4SMA Series DO-214AC (SMA) Cathode Band Package Outline Dimensions and Pad Layouts 0.065 (1.65) 0.049 (1.25) 0.110 (2.79) 0.100 (2.54) 6 SILICON DIODE ARRAYS 261 0.177 (4.50) 0.157(3.99) 0.012 (0.305) 0.006 (0.152) 0.090 (2.29) 0.078 (1.98) 0.008 (0.203) MAX 0.060 (1.52) 0.030 (0.76) 0.208 (5.28) 0.194 (4.93) Dimensions in inches and (millimeters) w w w. l i t t e l f u s e . c o m
P4SMA22A 价格&库存

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