Teccor® brand Thyristors
Silicon Controlled Rectifiers
Sx02xS EV Series 1.5 Amp Sensitive SCR
Description New 1.5Amp sensitive gate SCR series offers high static dv/dt with low turn off time (tq) through small die planar construction design. All SCR’s junctions are glasspassivated to ensure long term reliability and parametric stability.
Features
mount packages capability > 15Amps
Value 1.5 400 to 600 200 Unit A V μA
time (tq) < 35 μsec. microprocessor interface
Main Features
Symbol IT(RMS) VDRM / VRRM IGT
(VDRM / VRRM ) capability — up to 600V Schematic Symbol
A
Applications The Sx02xS EV series is specifically designed for Gas Ignition applications that require high pulse surge current capability.
G
K
Absolute Maximum Ratings
Symbol IT(RMS) IT(AV) RMS on-state current (full sine wave) Average on-state current Non repetitive surge peak on-state current (Single cycle, TJ initial = 25°C) Parameter TO-92 SOT-223 TO-92 SOT-223 TO-92 SOT-223 tp = 10 ms tp = 8.3 ms di/dt IGM PG(AV) Tstg TJ Critical rate of rise of on-state current IG = 10mA Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range TO-92 SOT-223 tp = 10 μs TC = 65°C TL = 95°C TC = 65°C TC = 95°C F = 50 Hz F = 60 Hz F = 50 Hz F = 60 Hz TJ = 125°C TJ = 125°C TJ = 125°C Value 1.5 0.95 12.5 A 15.0 0.78 A2s 0.93 50 1.0 0.1 -40 to 150 °C -40 to 125 A/μs A W Unit A A
ITSM
I2t
I2t Value for fusing
Sx02xS EV Series 1.5 Amp Sensitive SCRs
190 Power Thyristor Databook
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Teccor® brand Thyristors
Silicon Controlled Rectifiers
Electrical Characteristics (TJ = 25°C, unless otherwise specified)
Symbol IGT VGT VGRM IH Description DC Gate Trigger Current DC Gate Trigger Voltage Peak Reverse Gate Voltage Holding Current Critical Rate-of-Rise of Off-State Voltage Test Conditions VD = 12V RL = 60 Ω IRG = 10μA RGK = 1 kΩ TJ = 125°C VD = VDRM / VRRM Exponential Waveform RGK = 1 kΩ TJ = 125°C @ 600 V RGK = 1 kΩ IG = 10mA PW = 15μsec IT = 3.0A (pk) Sx02xS Min 15 — 5 — Max 200 0.8 — 5 Unit μA V V mA
(dv/dt)s
25
—
V/μs
tq tgt
Turn-Off Time
—
35
μs
Turn-On Time
—
3
μs
Static Characteristics (TJ = 25°C, unless otherwise specified)
Symbol VTM Description Peak On-State Voltage Test Conditions ITM = 3.0A (pk) TJ = 25°C @ VD= VDRM RGK = 1 kΩ TJ = 125°C @ VD= VDRM RGK = 1 kΩ Value Min — — — Max 1.70 5 500 Unit V μA μA
IDRM
Off-State Current, Peak Repetitive
Thermal Resistances
Symbol Rth(j-c) Description Junction to case (AC) Test Conditions IT = 1.5A (RMS)1 TO-92 SOT-223 TO-92 SOT-223 Value 50 °C/W 25 160 °C/W 60 Unit
Rth(j-a)
1
Junction to ambient
IT = 1.5A (RMS)1
60Hz AC resistive load condition, 100% conduction.
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191 Power Thyristor Databook
Sx02xS EV Series 1.5 Amp Sensitive SCRs
Teccor® brand Thyristors
Silicon Controlled Rectifiers
Figure 1: Normalized DC Gate Trigger Current vs. Junction Temperature
2.5
Figure 2: Normalized DC Holding Current vs. Junction Temperature
2.0
Normalized Gate: Trigger Current IGT @ Tj / IGT@ 25ºC
2.0
1.5
1.5
1.0
1.0
0.5
0.5
0.0
0.0 -40 -25 -10 +5 +20 +35 +50 +65 +80 +95 +110 +125
-40
-25
-10
+5
+20
+35
+50
+65
+80
+95
+110
+125
Junction Temperature (TJ) °C
Figure 3: Normalized DC Gate Trigger Voltage vs. Junction Temperature
Figure 4: Power Dissipation (Typical) vs. RMS On-State Current
1.5
Average Power Dissipation, PD (Watts)
1.5
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180o
Normalized Gate: Trigger Voltage (VGT @ Tj / VGT @ 25ºC)
1.0
1.0
0.5
0.5
-40
-25
-10
+5
+20
+35
+50
+65
+80
+95 +110 +125
0.0 0.0 0.5 1.0 1.5
Junction Temperature (TJ) °C
RMS On-state Current [I T (RMS) ] (Amps)
Figure 5: Maximum Allowable Case Temperature vs. On-State Current
130
Max Allowable Case Temperature, T C (Celsius)
120 SOT-223 110 100 TO-92 90 80 70 60 50 0.0 0.5 1.0 1.5
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 180o CASE TEMPERATURE: Measured as shown on dimensional drawings
RMS On-state Current [IT (RMS)] (Amps)
Sx02xS EV Series 1.5 Amp Sensitive SCRs
192 Power Thyristor Databook
www.littelfuse.com ©2008 Littelfuse
Teccor® brand Thyristors
Silicon Controlled Rectifiers
Figure 6: Surge Peak On-State Current vs. Number of Cycles
Peak Surge (Non-repetitive) On-State Current (ITSM ) – Amps.
Supply Frequency: 60Hz Sinusoidal Load: Resistive RMS On-State Current [IT(RMS)]: Max Rated Value at Specific Case Temperature Notes: 1. Gate control may be lost during and immediately following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value.
Dev ices
20 15 12 10 9 8 7 6 5 4 3 2
1.5 A
1 1 2 3 4 5 6 7 8 9 10 20 30 40 60 80 100 200 300 400 600 1000
Surge Current Duration – Full Cycle
Soldering Parameters
Reflow Condition - Temperature Min (Ts(min)) Pre Heat - Temperature Max (Ts(max)) - Time (min to max) (ts) Average ramp up rate (Liquidus Temp) (TL) to peak TS(max) to TL - Ramp-up Rate Reflow - Temperature (TL) (Liquidus) - Time (min to max) (ts) Pb – Free assembly 150°C 200°C 60 – 180 secs 5°C/second max 5°C/second max 217°C 60 – 150 seconds 260+0/-5 °C 20 – 40 seconds 5°C/second max 8 minutes Max. 280°C
Peak Temperature (TP) Time within 5°C of actual peak Temperature (tp) Ramp-down Rate Time 25°C to peak Temperature (TP) Do not exceed
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193 Power Thyristor Databook
Sx02xS EV Series 1.5 Amp Sensitive SCRs
Teccor® brand Thyristors
Silicon Controlled Rectifiers
Physical Specifications
Terminal Finish 100% Matte Tin-plated. UL recognized epoxy meeting flammability classification 94V-0. Copper Alloy
Environmental Specifications
Test AC Blocking Specifications and Conditions MIL-STD-750, M-1040, Cond A Applied Peak AC voltage @ 125°C for 1008 hours MIL-STD-750, M-1051, 100 cycles; -40°C to +150°C; 15-min dwell-time EIA / JEDEC, JESD22-A101 1008 hours; 320V - DC: 85°C; 85% rel humidity MIL-STD-750, M-1031, 1008 hours; 150°C 1008 hours; -40°C MIL-STD-750, M-1056 10 cycles; 0°C to 100°C; 5-min dwelltime at each temperature; 10 sec (max) transfer time between temperature EIA / JEDEC, JESD22-A102 168 hours (121°C at 2 ATMs) and 100% R/H MIL-STD-750 Method 2031 ANSI/J-STD-002, category 3, Test A MIL-STD-750, M-2036 Cond E
Body
Temperature Cycling
Lead Material
Temperature/ Humidity
Design Considerations Careful selection of the correct device for the application’s operating parameters and environment will go a long way toward extending the operating life of the thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the device rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage.
High Temp Storage Low-Temp Storage
Thermal Shock
Autoclave Resistance to Solder Heat Solderability Lead Bend
Dimensions — TO-92
Inches Dimensions Min A 0.175 0.170 C D E F G H I J 0.500 0.135 0.125 0.080 0.016 0.045 0.095 0.015 Typ — — — 0.165 — 0.095 — 0.050 0.100 — Max 0.205 0.210 — — 0.165 0.105 0.021 0.055 0.105 0.020 Min 4.450 4.320 12.700 3.430 3.180 2.040 0.407 1.150 2.420 0.380 Typ — — — 4.190 — 2.400 — 1.270 2.540 — Max 5.200 5.330 — — 4.190 2.660 0.533 1.390 2.660 0.500 Millimeters
Sx02xS EV Series 1.5 Amp Sensitive SCRs
194 Power Thyristor Databook
www.littelfuse.com ©2008 Littelfuse
Teccor® brand Thyristors
Silicon Controlled Rectifiers
Dimensions – SOT-223
Inches Pad Layout for SOT-223
3.3 (0.130”)
Millimeters Max 0.264 0.146 0.071 0.004 0.124 0.034 — — 0.287 0.014 Min 6.30 3.30 — 0.02 2.90 0.60 — — 6.70 0.24 Typ 6.50 3.50 — — 3.00 0.70 2.30 4.60 7 .00 0.26 Max 6.70 3.70 1.80 0.10 3.15 0.85 — — 7 .30 0.35
Dimensions Min A 0.248 0.130 Typ 0.256 0.138 — — 0.118 0.027 0.090 0.181 0.276 0.010
1.5 (0.059”)
C
1.2 (0.047”) (3x) 2.3 (0.091”) 6.4 (0.252”)
— 0.001 0.114 0.024 — — 0.264 0.009
D E F
1.5 (0.059”) 4.6 (0.181”)
G H I J K
Dimensions in Millimeters (Inches)
10° MAX
Product Selector
Part Number S402ES S602ES S402TS S602TS Voltage 400V X — X — 600V — X — X Gate Sensitivity 200μA 200μA 200μA 200μA Package TO-92 TO-92 SOT-223 SOT-223
Packing Options
Part Number Sx02ES Sx02ESAP Sx02ESRP Sx02TSRP
Note: x = voltage
Marking Sx02ES Sx02ES Sx02ES Sx02TS
Weight 0.170 g 0.170 g 0.170 g 0.120 g
Packing Mode
Base Quantity 2500
Ammo Pack Tape & Reel Tape & Reel
2000 2000 1000
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195 Power Thyristor Databook
Sx02xS EV Series 1.5 Amp Sensitive SCRs
Teccor® brand Thyristors
Silicon Controlled Rectifiers
TO-92 (3-lead) Reel Pack (RP) Radial Leaded Meets all EIA-468-B 1994 Standards
1.6 (41.0)
0.236 (6.0)
0.02 (0.5)
0.098 (2.5) MAX
1.26 (32.0)
0.708 (18.0)
0.354 (9.0) 0.5 (12.7) 0.1 (2.54) 14.17(360.0) MT1 / Cathode 0.2 (5.08) MT2 / Anode 0.157 DIA (4.0)
Gate
Flat up
1.97 (50.0) Dimension s are in inches (and millimeters).
Direction of Feed
TO-92 (3-lead) Ammo Pack (AP) Radial Leaded Meets all EIA-468-B 1994 Standards
0.236 (6.0) 1.62 (41.2) 0.708 (18.0)
0.02 (0.5)
0.098 (2.5) MAX
1.27 (32.2)
0.354 (9.0) 0.5 (12.7) 0.1 (2.54) MT2 / Anod e 0.2 (5.08) MT1 / Cathod e 0.157 (4.0) DIA
Gate
Flat down
Directio n of Feed
25 Devices per fold
1.85 (47.0)
12.2 (310.0) Dimensions are in inches (and millimeters).
1.85 (47.0) 13.3 (338.0)
Sx02xS EV Series 1.5 Amp Sensitive SCRs
196 Power Thyristor Databook
www.littelfuse.com ©2008 Littelfuse
Teccor® brand Thyristors
Silicon Controlled Rectifiers
Tape & Reel Specifications for SOT-223
1.5 mm 4 mm 8 mm 2 mm A / MT2 1.75 mm
5.5 mm 12 mm
K / MT1
A / MT2
GATE
180 mm 13 mm Abor Hole Diameter
13.4 mm
Part Numbering System
Part Marking System
S x 02 x xx xx
DC
SCR SERIES
VOLTAGE 4: 400V 6: 600V CURRENT 02: 1.5A
PACKING TYPE Blank: Bulk RP: Reel Pack (TO-92) : Embossed Carrier Pack (SOT-223) AP: Ammo Pack (TO-92) SENSITIVITY S: 200μA Sensitive SCR PACKAGE TYPE E: TO-92 T: SOT-223
Date Code (2 Digits Min.) Number = Year Letter = Month
www.littelfuse.com ©2008 Littelfuse
197 Power Thyristor Databook
Sx02xS EV Series 1.5 Amp Sensitive SCRs
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