SMTBJ100B

SMTBJ SiBOD™ series FEATURES 2.16 2.74 2.16 G Bi-directional transient voltage protection G Glass passivated junction G Nano second clamping response G Surge capability up to 250 (Amps) G No performance degradation under service life G Industry standard DO-2144AA Jedec outline G Available on tape (12mm) G UL recognised Solder Pads 2.26 All dimensions in mm MECHANICAL CHARACTERISTICS G Transfer molded, void free epoxy body G Terminals: modified ‘J’ bend for large contact area G Tin/Lead plated leads G Maximum case temperature for soldering purposes: 230°C for 10 seconds G Standard packaging: 12mm tape (meets EIA 481-1) G Device marking, device code, logo 2.0 B A 5.21/5.59 4.06/4.57 .102 .203 0.76/1.27 3.30/3.94 2.18/2.44 SEATING PLANE w w w. l i t t e l f u s e . c o m 59 SMTBJ SiBOD™ series ELECTRICAL CHARACTERISTICS @ 25°C Tamb SYMBOL VRM VBR VBO VT PARAMETER Stand-off voltage Breakdown voltage Breakover voltage On-state voltage IRM IBO IH Stand-off current Breakover current Holding current ABSOLUTE RATINGS SYMBOL Ipp Itsm di/dt T stg Tj TL Maximum temperature for soldering (For period of 10 seconds max) PARAMETER Peak Pulse Current Non-repetitive surge peak on-state current Critical rate of rise of on-state current Storage and operating junction temperature range 10/1000 µsec 8-20 µs expo tp20 ms Non-repetitive VALUE Type A Type B 50 100 150 250 30 100 -40 to +150 150 230 A A A A/µs °C °C °C Device Type SMTBJ050 A or B SMTBJ070 A or B SMTBJ100 A or B SMTBJ120 A or B SMTBJ170 A or B SMTBJ200 A or B Vrm Irm @ Vrm (µA) 1 1 1 1 1 1 Vbr MIN 60 80 110 140 180 220 Vbo MAX 80 120 135 165 215 265 Vt TYP @ 1A