SPA™ Silicon Protection Array Products
3.5pF Bi-Directional 0201 TVS Diode for ESD Protection
HF
RoHS
Pb
GREEN
SP1007 Lead-Free/Green Series
Description The SP1007 includes back-to-back Zener diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at the maximum level specified in the IEC61000-4-2 international standard (Level 4, ±8kV contact discharge) without performance degradation. The back-to-back configuration provides symmetrical ESD protection for data lines when AC signals are present.
Pinout
Features contact, ±15kV air (@ VR=2.5V) 0.1μA at 5V footprint available (0201)
1
Note: Drawing not to scale.
2
(5/50ns) 2A (tP=8/20μs)
Functional Block Diagram
Applications
devices
1
2
Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated.
©2010 Littelfuse, Inc. Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information.
45 Revised: May 17, 2010
SP1007 Lead-Free/Green Series
Lead-Free/Green SP1007
SPA™ Silicon Protection Array Products
3.5pF Bi-Directional 0201 TVS Diode for ESD Protection
Absolute Maximum Ratings
Symbol IPP TOP TSTOR Peak Current (tp=8/20μs) Operating Temperature Storage Temperature Parameter Value 2.0 -40 to 85 -65 to 150 Units A °C °C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Thermal Information
Parameter Storage Temperature Range Rating -65 to 150 150 260 Units °C °C °C
Electrical Characteristics (TOP=25ºC)
Parameter Reverse Standoff Voltage Breakdown Voltage Leakage Current Clamp Voltage1 Dynamic Resistance ESD Withstand Voltage1 Symbol V VBR ILEAK VC RDYN VESD IR=1mA VR=5V with 1 pin at GND IPP=1A, tp IPP=2A, tp (VC2 - VC1) / (IPP2 - IPP1) IEC61000-4-2 (Contact Discharge) IEC61000-4-2 (Air Discharge) Reverse Bias=0V I/O to I/O Capacitance1
NOTES:
1
Test Conditions
Min
Typ
Max 6.0
Units V V μA V
8.5 0.1
9.5 0.5
12.2 1.9 ±8 ±15 5 6
V Ω kV kV
CI/O-I/O
Reverse Bias=2.5V
Parameter is guaranteed by design and/or device characterization.
SP1007 Lead-Free/Green Series
46 Revised: May 17, 2010
©2010 Littelfuse, Inc. Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information.
SPA™ Silicon Protection Array Products
3.5pF Bi-Directional 0201 TVS Diode for ESD Protection
Capacitance vs. Reverse Bias
6.0
Pulse Waveform
110% 100%
5.0
90% 80%
4.0
Capacitance (pF)
70%
3.0
60% 50%
2.0
40% 30%
1.0
20% 10%
0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0% 0.0 5.0 10.0 15.0 20.0 25.0 30.0
Bias Voltage (V)
Insertion Loss (S21) I/O to GND
5 0
Attenuation (dB)
-5 -10 -15 -20 -25 -30 -35
Frequency (MHz)
©2010 Littelfuse, Inc. Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information.
47 Revised: May 17, 2010
SP1007 Lead-Free/Green Series
Lead-Free/Green SP1007
1
10
100
1000
10000
SPA™ Silicon Protection Array Products
3.5pF Bi-Directional 0201 TVS Diode for ESD Protection
Application Example
Keypads P1 P2 Outside World P3 P4
I/O Controller
IC
SP1007 (x4)
GND
Soldering Parameters
Reflow Condition - Temperature Min (Ts(min)) Pre Heat - Temperature Max (Ts(max)) - Time (min to max) (ts) Average ramp up rate (Liquidus) Temp (TL) to peak TS(max) to TL - Ramp-up Rate Reflow - Temperature (TL) (Liquidus) - Temperature (tL) 217°C 60 – 150 seconds 250+0/-5 °C 20 – 40 seconds 6°C/second max 150°C 200°C 60 – 180 secs
Peak Temperature (TP) Time within 5°C of actual peak Temperature (tp) Ramp-down Rate Time 25°C to peak Temperature (TP) Do not exceed
260°C
SP1007 Lead-Free/Green Series
48 Revised: May 17, 2010
©2010 Littelfuse, Inc. Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information.
SPA™ Silicon Protection Array Products
3.5pF Bi-Directional 0201 TVS Diode for ESD Protection
Package Dimensions - 0201 Flip Chip
0201 Flipchip Symbol
A
Millimeters Min Typ 0.620 Max 0.645 0.0116 0.275 0.150 0.250 0.250 0.010 0.155 0.255 0.255 0.015 0.0096 0.0057 0.0096 0.0096 0.0002 Min
Inches Typ 0.0244 0.0126 0.0108 0.0059 0.0098 0.0098 0.0004 0.0120 0.0061 0.0100 0.0100 0.0006 Max 0.0254
A B
B F C
0.595 0.295 0.245 0.145 0.245 0.245 0.005
C D
G
E F G
D
E
D
Part Numbering System
Product Characteristics
Lead Plating
G= Green T= Tape & Reel
SP 1007 – 01 W T G
Silicon Protection Array Series
Sn Copper 6 um (max) Silicon Silicon
Lead Material Lead Coplanarity Subsitute Material
Number of Channels
Package W: 0201 Flipchip
Body Material
Notes : 1. All dimensions are in millimeters 2. Dimensions include solder plating.
Part Marking System
Ordering Information
Part Number SP1007-01WTG Package Marking Min. Order Qty. 10000
©2010 Littelfuse, Inc. Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information.
49 Revised: May 17, 2010
SP1007 Lead-Free/Green Series
Lead-Free/Green SP1007
5. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form.
SPA™ Silicon Protection Array Products
3.5pF Bi-Directional 0201 TVS Diode for ESD Protection
Embossed Carrier Tape & Reel Specification – 0201 Flipchip
P1 P2 P0 D E
Symbol A0 B0 D D1 E ø 1.50 + 0.10 ø 0.20 +/- 0.05 1.75+/-0.10 Millimeters
W
F
F K0 P0 P1 P2 W T 2.00+/-0.05 2.00+/-0.05 4.00+/-0.10
D1 T
A0
K0
Recommended Solder Pad Footprint 0.30
B0
0.28
0.75
0.19
*Sizes in mm
SP1007 Lead-Free/Green Series
50 Revised: May 17, 2010
©2010 Littelfuse, Inc. Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information.
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