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T10B080B

T10B080B

  • 厂商:

    LITTELFUSE

  • 封装:

  • 描述:

    T10B080B - SIDAtor Device - Littelfuse

  • 数据手册
  • 价格&库存
T10B080B 数据手册
T10B SIDACtor® Device RoHS The bi-directional T10B devices are a through-hole technology SIDACtor protector. It is intended for cost-sensitive telecommunication applications. This T10 SIDACtor series enables equipment to comply with various regulatory requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA968-A (formerly known as FCC Part 68). Electrical Parameters Part Number * T10B080B T10B080E T10B110B T10B110E T10B140B T10B140E T10B180B T10B180E T10B220B T10B220E T10B270B T10B270E VDRM @ 5 µA Volts 80 80 105 105 140 140 175 175 214 214 270 270 VS Volts 120 120 135 135 170 170 210 210 265 265 360 360 VT Volts 4 4 4 4 4 4 4 4 4 4 4 4 IS mAmps 800 800 800 800 800 800 800 800 800 800 800 800 IH mAmps 120 180 120 180 120 180 120 180 120 180 120 180 pF TYP 60 60 55 55 48 48 44 44 41 41 36 36 * For surge ratings, see table below. General Notes: • All measurements are made at an ambient temperature of 25 °C. IPP applies to -40 °C through +85 °C temperature range. • IPP is a repetitive surge rating and is guaranteed for the life of the product. • Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities. • VDRM is measured at IDRM. • VS is measured at 0.5 V/µs. • Special voltage (VS and VDRM) and holding current (IH) requirements are available upon request. Surge Ratings in Amps IPP 8x20 * 1.2x50 ** Series B * Current waveform in µs ** Voltage waveform in µs Amps 250 5x310 * 10x700 ** Amps 125 10x1000 * 10x1000 ** Amps 100 ITSM 50 / 60 Hz Amps 50 di/dt Amps/µs 100 Telecom Design Guide • © 2006 Littelfuse 3 - 27 www.littelfuse.com SIDACtor Devices T10B SIDACtor® Device Thermal Considerations Package DO-201AD Symbol TJ TS RθJA Parameter Operating Junction Temperature Range Storage Temperature Range Thermal Resistance: Junction to Ambient Value 150 -40 to +150 60 Unit °C °C °C/W +I IPP – Peak Pulse Current – %IPP tr = r ise time to peak value td = decay time to half value IT IS IH IDRM -V VT VDRM VS +V 100 Peak Value Waveform = tr x td 50 Half Value 0 0 tr td t – Time (µs) -I V-I Characteristics tr x td Pulse Waveform Percent of VS Change – % 10 IH (TC = 25 ˚C) 14 12 8 6 4 2 0 -4 -6 -8 -40 -20 0 20 40 60 80 100 120 140 160 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -40 -20 0 20 40 60 80 100 120 140 160 IH 25 ˚C 25 ˚C Ratio of Case Temperature (TC) – ˚C Junction Temperature (TJ) – ˚C Normalized VS Change versus Junction Temperature Normalized DC Holding Current versus Case Temperature www.littelfuse.com 3 - 28 © 2006 Littelfuse • Telecom Design Guide
T10B080B 价格&库存

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