1SS110

Switching Diode *150mW DO-34 * Glass silicon switching diodes * We declare that the material of product compliance with RoHS requirements. 1SS110 Product Characteristic Absolute Maximum Ratings(Ta=25°C) Type 1SS110 VR(V) 35 IF(mA) 100 Pd(mW) 150 Topr(℃) -20~+60 Tstg(℃) -55~+125 Characteristics at Ta = 25°C Parameter Symbol Forward Voltage at IF=100mA Leakage Current at VR=25V Breakdown Voltage at IR=10uA Capacitance at VR = 6V f =1MHZ Forward resistance at IF=2mA f=100MHz Inductance at f=250MHZ symbol VF IR V(BR)R CT rj Ls MIN 35 TYPE 3 MAX 1.0 0.1 1.2 0.9 Unit V uA V pF Ω nH LESHAN RADIO COMPANY, LTD. Packing Taping / Box(T52) Tape Inner Box: 2500pcs/each 80mm 80mm 260mm Bulk Tape Inner Box: 5000pcs/each 85mm 160 mm 185mm