BA277

LESHAN RADIO COMPANY, LTD. Band-switching diode FEATURES · Small plastic SMD package · Continuous reverse voltage: max. 35 V · Continuous forward current: max. 100 mA · Low diode capacitance: max. 1.2 pF · Low diode forward resistance: max. 0.7 Ω. APPLICATIONS · Low loss band switching in VHF television tuners. · Surface mount band-switching circuits. DESCRIPTION Planar high performance band-switching diode in a small plastic SOD523 (SC-79) SMD package. BA 277 1 2 SOD523 SC-79 1 CATHODE 2 ANODE LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF P tot T stg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature CONDITIONS MIN. – – – -65 -65 MAX. 35 100 715 +150 +150 UNIT V mA mW °C °C Ts =90°C ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. SYMBOL VF IR Cd Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering-point VALUE 85 UNIT K/W PARAMETER forward voltage reverse current diode capacitance CONDITIONS I F =10 mA V R = 25 V V R = 20 V; T amb =75°C f = 1 MHz; V R = 6 V; note 1; see Fig.1 MAX. 1 50 1 1.2 0.7 UNIT V nA µA pF Ω r D diode forward resistance I F = 2 mA; f = 100 MHz; note 1; see Fig.2 S19–1/2 LESHAN RADIO COMPANY, LTD. BA 277 10 2.5 2.0 C d (pF) 1.5 1 r D( Ω) f = 1 MHz; T j =25°C 10 -1 1 10 10 2 1.0 0.5 f = 100 MHz; T j =25°C 0 10 –1 1 10 V R (V) I F (mA ) Fig.1 Diode capacitance as a function of reverse voltage; typical values. Fig.2 Diode forward resistance as a function of forward current; typical values. S19–2/2