BA891

LESHAN RADIO COMPANY, LTD. Band-switching diode FEATURES · Ultra small plastic SMD package · Low diode capacitance: max. 1.05 pF · Low diode forward resistance: max. 0.7 Ω · Small inductance. APPLICATIONS · Low loss band-switching in VHF television tuners · Surface mount band-switching circuits. DESCRIPTION The BA891 is a planar, high performance band-switching diode in the ultra small SOD523 SMD plastic package. BA 891 1 2 SOD523 SC-79 1 CATHODE 2 ANODE LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR I IF P tot T stg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature CONDITIONS MIN. – – – -65 -65 MAX. 35 100 715 +150 +150 UNIT V mA mW °C °C T s =90°C ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. SYMBOL VF IR Cd PARAMETER forward voltage reverse current diode capacitance CONDITIONS I F =10 mA V R =30 V f = 1 MHz; note 1; see Fig.1 V R= 1 V V R= 3 V r D diode forward resistance f = 100 MHz; note 1; see Fig.2 I F = 3 mA I F = 10 mA L S TYP. – – 0.8 0.65 0.45 0.36 0.6 MAX. 1 20 1.05 0.9 0.7 0.5 - UNIT V nA pF pF Ω Ω nH series inductance Note 1. Guaranteed on AQL basis; inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering-point VALUE 85 UNIT K/W S21–1/2 LESHAN RADIO COMPANY, LTD. BA 891 1 10 0.8 C d (pF) 0.6 r D( Ω) 1 f = 1 MHz; T j =25°C 0 10 20 30 f = 100 MHz; T j =25°C 10 -1 10 –1 0.4 0.2 0 1 10 V R (V) I F (mA ) Fig.1 Diode capacitance as a function of reverse voltage; typical values. Fig.2 Diode forward resistance as a function of forward current; typical values. S21–2/2