BA892

LESHAN RADIO COMPANY, LTD. Band-switching diode FEATURES · Small plastic SMD package · Low diode capacitance · Low diode forward resistance · Small inductance. APPLICATIONS · Low loss band-switching in VHF television tuners · Surface mount band-switching circuits. DESCRIPTION Planar, high performance band-switch diode in a small SMD plastic package (SOD523). 2 1 BA 892 SOD523 SC-79 1 CATHODE 2 ANODE LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL I VR IF P tot T stg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature T s =90°C CONDITIONS MIN. – – – -65 -65 MAX. 35 100 715 +150 +150 UNIT V mA mW °C °C ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. SYMBOL PARAMETER VF forward voltage IR Cd reverse current diode capacitance CONDITIONS I F =10 mA V R =30 V f = 1 MHz; note 1; V R= 1 V V R= 3 V rD diode forward resistance f = 100 MHz; note 1; I F = 3 mA I F = 10 mA L S MIN – – – 0.6 – – – TYP. – – 0.92 0.85 0.45 0.36 0.6 MAX. 1 20 1.4 1.1 0.7 0.5 - UNIT V nA pF pF Ω Ω nH series inductance Note 1. Guaranteed on AQL basis; inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering-point VALUE 85 UNIT K/W S22–1/2 LESHAN RADIO COMPANY, LTD. BA 892 2 10 1.6 C d (pF) 1.2 r D( Ω) 1 f = 1 MHz; T j =25°C 0.8 0.4 0 0 10 20 30 10 -1 0.1 f = 100 MHz; T j =25°C 1 10 V R (V) I F (mA ) Fig.1 Diode capacitance as a function of reverse voltage; typical values. Fig.2 Diode forward resistance as a function of forward current; typical values. S22–2/2