BAL99LT1

LESHAN RADIO COMPANY, LTD. Switching Diode 3 ANODE 2 CATHODE BAL99LT1 3 MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Symbol VR IF Value 70 100 Unit Vdc mAdc 1 2 CASE 318–08, STYLE 18 SOT–23 (TO–236AB) DEVICE MARKING BAL99LT1 = JF THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 R θJA PD 556 300 2.4 R θJA T J , T stg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol IR — — — V (BR) VF — — — — QS CD t rr V FR — — — — 715 855 1000 1250 45 1.5 6.0 1.75 pC pF ns Vdc 70 2.5 30 50 — Vdc mV Min Max Unit µAdc OFF CHARACTERISTICS Reverse Voltage Leakage Current (V R = 70 Vdc) (V R = 25 Vdc, T J = 150°C) (V R = 70 Vdc, T J = 150°C) Reverse Breakdown Voltage (I R = 100 µAdc) Forward Voltage (I F = 1.0 mAdc) (I F = 10 mAdc) (I F = 50 mAdc) (I F = 150 mAdc) Recovery Current (I F = 10 mAdc, V R = 5.0 Vdc, R L = 500 Ω) Diode Capacitance (V R = 0, f = 1.0 MHz) Reverse Recovery Time (I F = I R = 10 mAdc, R L = 100 Ω, measured at I R = 1.0 mAdc) Forward Recovery Voltage (I F = 10 mAdc, t r = 20 ns) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. G1–1/2 LESHAN RADIO COMPANY, LTD. BAL99LT1 100 10 I F , FORWARD CURRENT (mA) T A = 150°C I R , REVERSE CURRENT (µA) 1.0 T A = 125°C 10 T A= 85°C T A= 25°C TA= – 40°C 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0.1 T A = 85°C T A = 55°C 1.0 0.01 T A = 25°C 0.001 0 10 20 30 40 50 V F , FORWARD VOLTAGE (VOLTS) V R , REVERSE VOLTAGE (VOLTS) Figure 1. Forward Voltage Figure 2. Leakage Current 0.68 C D , DIODE CAPACITANCE (pF) 0.64 0.60 0.56 0.52 0 2 4 6 8 V R , REVERSE VOLTAGE (VOLTS) Figure 3. Capacitance G1–2/2