BAS16LT1

LESHAN RADIO COMPANY, LTD. Switching Diode 3 CATHODE 1 ANODE BAS16LT1 3 MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF I FM(surge) Value 75 200 500 Unit 1 Vdc mAdc mAdc 2 CASE 318–08, STYLE 8 SOT–23 (TO–236AB) DEVICE MARKING BAS16LT1 = A6 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C RθJA PD RθJA TJ , Tstg ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol IR — — — V (BR) VF — — — — CD V FR t rr QS — –— — 715 855 1000 1250 2.0 1.75 6.0 45 pF Vdc ns pC 75 1.0 50 30 — Vdc mV Min Max Unit µAdc OFF CHARACTERISTICS Reverse Voltage Leakage Current (V R = 75Vdc) (V R = 75 Vdc, T J = 150°C) (V R = 25 Vdc, T J = 150°C) Reverse Breakdown Voltage (I BR = 100 µAdc) Forward Voltage (I F = 1.0 mAdc) (I F = 10 mAdc) (I F = 50 mAdc) (I F = 150 mAdc) Diode Capacitance (V R = 0, f = 1.0 MHz) Forward Recovery Voltage (I F = 10 mAdc, t r = 20ns ) Reverse Recovery Time (I F = I R = 10 mAdc, R L = 50 Ω) Stored Charge (I F = 10 mAdc to V R= 5.0Vdc, R L = 500 Ω) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. G2–1/2 LESHAN RADIO COMPANY, LTD. BAS16LT1 +10 V 820 Ω 2.0 k 0.1µF tr tp 10% t IF t rr t 100 µH IF 0.1 µF 50 Ω OUTPUT PULSE GENERATOR D.U.T. 50 Ω INPUT SAMPLING OSCILLOSCOPE 90% V R INPUT SIGNAL IR i R(REC) = 1.0 mA OUTPUT PULSE (I F = I R = 10 mA; MEASURED at i R(REC) = 1.0 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10 mA. Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10 mA. Notes: 3. t p » t rr Figure 1. Recovery Time Equivalent Test Circuit 100 10 I F , FORWARD CURRENT (mA) T A = 150°C T A= 85°C 10 I R , REVERSE CURRENT (µA) 1.0 T A = 125°C TA= – 40°C 0.1 T A = 85°C T A = 55°C 1.0 T A= 25°C 0.01 0.1 0.2 0.4 0.6 0.8 1.0 1.2 T A = 25°C 0.001 0 10 20 30 40 50 V F , FORWARD VOLTAGE (VOLTS) V R , REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 C D , DIODE CAPACITANCE (pF) 0.64 0.60 0.56 0.52 0 2 4 6 8 V R , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance G2–2/2