BAS40LT1

LESHAN RADIO COMPANY, LTD. Schottky Barrier Diode BAS40LT1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. 1 2 CASE 318–08, STYLE 11 SOT–23 (TO–236AB) * 40V SCHOTTKY BARRIER DIODES 3 ANODE 1 CATHODE 3 MAXIMUM RATINGS (TJ = 150°C unless otherwise noted) Rating Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C Operating Junction and Storage Temperature Range Symbol VR PF Value 40 225 1.8 TJ, Tstg –55 to +150 Unit Volts mW mW/°C °C ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µA) Total Capacitance (VR = 1.0 V, f = 1.0 MHz) Reverse Leakage (V R = 25 V) Forward Voltage (IF = 0.1 mAdc) Forward Voltage (IF = 30 mAdc) Forward Voltage (IF = 100 mAdc) Symbol V(BR)R CT IR VF VF VF Min 40 — — — — — Max — 5.0 1.0 380 500 1.0 Unit Volts pF µAdc mVdc mVdc Vdc BAS40LT1–1/2 LESHAN RADIO COMPANY, LTD. BAS40LT1 100 100 IR, REVERSE CURRENT (µ A) IF, FORWARD CURRENT (mA) 10 10 1.0 0.1 1.0 0.01 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.001 0 5.0 10 15 20 25 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Typical Forward Current 3.5 Figure 2. Reverse Current Versus Reverse Voltage 3.0 2.5 CT, CAPACITANCE (pF) 2.0 1.5 1.0 0.5 0 0 5.0 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (V) Figure 3. Typical Current BAS40LT1–2/2