BAS516

LESHAN RADIO COMPANY, LTD. High-speed diode FEATURES · Ultra small plastic SMD package · High switching speed: max. 4 ns · Continuous reverse voltage: max. 75 V · Repetitive peak reverse voltage: max. 85 V · Repetitive peak forward current: max. 500 mA. APPLICATIONS · High-speed switching in e.g. surface mounted circuits. 1 CATHODE BAS516 DESCRIPTION The BAS516 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD523 (SC79) SMD plastic package. 2 1 SOD523 SC-79 2 ANODE LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL V RRM VR IF I FRM I FSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current T s =90°C; note 1; see Fig.1 square wave; T j =25°C prior to surge; see Fig.3 t =1µs t =1 ms t =1 s P tot T stg Tj Note 1. Ts is the temperature at the soldering point of the cathode tab. ELECTRICAL CHARACTERISTICS T j =25°C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS see Fig.2 I F = 1 mA I F = 10 mA I F =50 mA I F = 150 mA IR reverse current see Fig.4 V R = 25 V V R =75 V V R = 25 V; T j = 150 °C V R = 75 V; T j = 150 °C; Cd t rr V fr diode capacitance reverse recovery time forward recovery voltage f = 1 MHz; V R = 0; see Fig.5 when switched from I F =10mA to I R = 10mA; R L = 100 Ω; measured at I R = 1 mA; see Fig.6 when switched from IF = 10 mA; tr = 20 ns; see Fig.7 CONDITIONS note 1 MAX. 715 855 1 1.25 30 1 30 50 1 4 1.75 VALUE 120 UNIT mV mV V V nA µA µA µA pF ns V UNIT K/W total power dissipation storage temperature junction temperature T s =90°C; note 1 CONDITIONS MIN. – – – – MAX. 85 75 250 500 UNIT V V mA mA – – – – -65 – 4 1 0.5 500 +150 150 A A A mW °C °C THERMAL CHARACTERISTICS SYMBOL PARAMETER R Note th j-s thermal resistance from junction to soldering point 1. Soldering point of the cathode tab. S29–1/2 LESHAN RADIO COMPANY, LTD. BAS516 300 500 400 200 I F (mA) 200 100 100 (1) T j = 150 °C; typical values. (2)T j =25°C; typical values. (3) T j =25°C; maximum values. 0 50 100 150 200 0 0 1 2 0 T S ( °C ) I F (mA) 300 Fig.1 Maximum permissible continuous forward current as a function of soldering point temperature. 10 2 V F( V ) Fig.2 Forward current as a function of forward voltage. 10 I FSM (A) 1 Based on square wave currents; T j =25°C prior to surge. 10 -1 0 10 102 103 104 t P ( µs ) Fig.3 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 0.6 10 5 10 4 0.4 I R (nA) 10 3 C d (pF) 0.2 10 2 f = 1 MHz ; T j =25°C; 10 0 100 200 0 0 4 8 12 16 T J ( °C ) Fig.4 Reverse current as a function of junction temperature. V R( V ) Fig.5 Diode capacitance as a function of reverse voltage; typical values. S29–2/2 LESHAN RADIO COMPANY, LTD. BAS516 (1) I R = 1 mA. Input signal: reverse pulse rise time t r = 0.6 ns; reverse voltage pulse duration t p = 100 ns; duty factor δ = 0.05; Oscilloscope: rise time t r = 0.35 ns. Fig.6 Reverse recovery voltage test circuit and waveforms. Input signal: forward pulse rise time t r= 20 ns; forward current pulse duration t p ≥ 100 ns; duty factor δ ≤ 0.005. Fig.7 Forward recovery voltage test circuit and waveforms. S29–3/2