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BAT54LT1

BAT54LT1

  • 厂商:

    LRC(乐山无线电)

  • 封装:

  • 描述:

    BAT54LT1 - Schottky Barrier Diodes - Leshan Radio Company

  • 详情介绍
  • 数据手册
  • 价格&库存
BAT54LT1 数据手册
LESHAN RADIO COMPANY, LTD. Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. • Extremely Fast Switching Speed • Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc BAT54LT1 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES 3 1 2 ORDERING INFORMATION Device BAT54LT1 Package SOT–23 Shipping 3000/Tape & Reel CASE 318, STYLE 8 SOT–23 (TO–236AB) Preferred: devices are recommended choices for future use and best overall value. 1 CATHODE 3 ANODE DEVICE MARKING BAT54LT1 = JV3 MAXIMUM RATINGS (T J = 125°C unless otherwise noted) Rating Reverse Voltage Forward Power Dissipation @ T A = 25°C Derate above 25°C Forward Current(DC) Junction Temperature Storage Temperature Range Symbol VR PF Max 30 200 2.0 200Max 125Max –55 to +150 Unit Volts mW mW/°C mA °C °C IF TJ T stg ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (I R = 10 µA) Total Capacitance (V R = 1.0 V, f = 1.0 MHz) Reverse Leakage (V R = 25 V) Forward Voltage (I F = 0.1 mAdc) Forward Voltage (I F = 30 mAdc) Forward Voltage (I F = 100 mAdc) Reverse Recovery Time (I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc, Figure 1) Forward Voltage (I F = 1.0 mAdc) Forward Voltage (I F = 10 mAdc) Forward Current (DC) Repetitive Peak Forward Current Non–Repetitive Peak Forward Current (t < 1.0 s) Symbol V(BR)R CT IR VF VF VF trr VF VF IF IFRM IFSM Min 30 — — — — — — — — — — — Typ — 7.6 0.5 0.22 0.41 0.52 — 0.29 0.35 — — — Max — 10 2.0 0.24 0.5 0.8 5.0 0.32 0.40 200 300 600 Unit Volts pF µAdc Vdc Vdc Vdc ns Vdc Vdc mAdc mAdc mAdc BAT54LT1–1/2 LESHAN RADIO COMPANY, LTD. BAT54LT1 +10 V 820 Ω 2.0 k 0.1µF tr tp 10% t IF t rr t 100 µH IF 0.1 µF 50 Ω OUTPUT PULSE GENERATOR D.U.T. 50 Ω INPUT SAMPLING OSCILLOSCOPE 90% V R INPUT SIGNAL IR i R(REC) = 1.0 mA OUTPUT PULSE (I F = I R = 10 mA; MEASURED at i R(REC) = 1.0 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA. Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA. Notes: 3. t p » t rr Figure 1. Recovery Time Equivalent Test Circuit 100 1000 T A = 150°C IR , REVERSE CURRENT (µA) IF , FORWARD CURRENT (mA) 100 10 150°C T A = 125°C 10 1.0 125°C 1.0 T A = 85°C 0.1 85°C 25°C – 40°C –55°C 0.01 T A = 25°C 0.001 0 5 10 15 20 25 30 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 VF , FORWARD VOLTAGE (VOLTS) VR , REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 14 12 CT TOTAL CAPACITANCE (pF) 10 8 6 4 2 0 0 5 10 15 20 25 30 VR , REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance BAT54LT1–2/2
BAT54LT1
1. 物料型号: - 型号为BAT54LT1。

2. 器件简介: - 这些肖特基势垒二极管设计用于高速开关应用、电路保护和电压钳位。极低的正向电压降低了导通损耗。微型表面贴装封装非常适合空间受限的手持和便携式应用。

3. 引脚分配: - 1 CATHODE(阴极)3 ANODE(阳极)。

4. 参数特性: - 最大额定反向电压(VR):30伏特。 - 最大正向功率耗散(PF):在25°C时为200毫瓦,超过25°C时每摄氏度降低2.0毫瓦。 - 最大正向直流电流(IF):200毫安。 - 最大结温(TJ):125摄氏度。 - 存储温度范围(Tstg):-55至+150摄氏度。

5. 功能详解应用信息: - 器件具有极快的开关速度和极低的正向电压,典型值为0.35伏特(在10毫安直流电流下)。这种二极管适用于需要高速开关和低功耗的应用场合。

6. 封装信息: - 封装为SOT-23(TO-236AB),每卷3000个。
BAT54LT1 价格&库存

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BAT54LT1G
  •  国内价格
  • 5+0.3323
  • 20+0.30315
  • 100+0.274
  • 500+0.24485
  • 1000+0.23125
  • 2000+0.22153

库存:0

LBAT54LT1G
  •  国内价格
  • 1+0.05988
  • 30+0.05774
  • 100+0.0556
  • 500+0.05132
  • 1000+0.04918
  • 2000+0.0479

库存:2360