BAV74LT1

LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode BAV74LT1 3 1 ANODE 3 CATHODE 1 2 ANODE 2 CASE 318–08, STYLE 9 SOT–23 (TO–236AB) DEVICE MARKING BAV74LT1 = JA MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF I FM(surge) Value 50 200 500 Unit Vdc mAdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board (1) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C R θJA PD R θJA T J , T stg ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) ( EACH DIODE ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage V (BR) (I (BR) = 5.0 µAdc) Reverse Voltage Leakage Current IR (V R = 50 Vdc, T J = 125°C) (V R = 50Vdc) Diode Capacitance CD (V R = 0, f = 1.0 MHz) Forward Voltage VF (I F = 100 mAdc) Reverse Recovery Time t rr (I F=IR=10mAdc, IR(REC)=1.0mAdc, measured at IR= 1.0 mA, RL=100Ω) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 50 — Vdc µAdc — — — 100 0.1 2.0 pF Vdc — — 1.0 4.0 ns G6–1/2 LESHAN RADIO COMPANY, LTD. BAV74LT1 Curves Applicable to Each Anode 100 10 I F , FORWARD CURRENT (mA) T A = 150°C T A = 85°C 10 I R , REVERSE CURRENT (µA) 1.0 T A = 125°C T A = – 40°C 0.1 T A = 85°C 1.0 T A = 25°C T A = 55°C 0.01 T A = 25°C 0.001 0 10 20 30 40 50 0.1 0.2 0.4 0.6 0.8 1.0 1.2 V F , FORWARD VOLTAGE (VOLTS) Figure 1. Forward Voltage V R , REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current 1.0 C T TOTAL CAPACITANCE (pF) 0.9 0.8 0.7 0.6 0 2 4 6 8 V R , REVERSE VOLTAGE (VOLTS) Figure 3. Capacitance G6–2/2