BAV99WT1

LESHAN RADIO COMPANY, LTD. Dual Serise Switching Diodes The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection • Polarity Reversal Protection • Data Line Protection • Inductive Load Protection • Steering Logic BAV99WT1 BAV99RWT1 3 1 2 BAV99WT1 CASE 419–02, STYLE 9 SOT–323 (SC–70) BAV99RWT1 CASE 419–02, STYLE 10 SOT–323 (SC–70) ANODE 1 CATHODE 2 3 ORDERING INFORMATION Device BAV99WT1 BAV99RWT1 Package SOT–323(SC–70) SOT–323(SC–70) Shipping 3000/Tape & Reel 3000/Tape & Reel CATHODE 1 CATHODE/ANODE BAV99WT1 ANODE 2 Preferred: devices are recommended choices for future use and best overall value. 3 CATHODE/ANODE DEVICE MARKING BAV99WT1 = A7; BAV99RWT1 = F7 BAV99RWT1 MAXIMUM RATINGS (Each Diode) Rating Reverse Voltag Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage Average Rectified Forward Current (Note 1.) (averaged over any 20 ms period) Repetitive Peak Forward Current Non–Repetitive Peak Forward Current t = 1.0 µs t = 1.0 ms t = 1.0 S 1. FR–5 = 1.0 × 0.75 × 0.062 in. Symbol VR IF IFM(surge) VRRM IF(AV) Value 70 215 500 70 715 Unit Vdc mAdc mAdc V mA IFRM IFSM 450 2.0 1.0 0.5 mA A BAV99WT1 BAV99RWT1–1/3 LESHAN RADIO COMPANY, LTD. BAV99WT1 BAV99RWT1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board, (Note 1.) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2.) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Characteristic Symbol PD Max 200 1.6 RθJA PD 625 300 2.4 417 –65 to +150 Min Unit mW mW/°C °C/W mW mW/°C °C/W °C Max Unit RθJA TJ,T stg Symbol ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode) OFF CHARACTERISTICS Reverse Breakdown Voltage Reverse Voltage Leakage Current (I(BR) = 100 µA) (VR = 70 Vdc) (VR = 25 Vdc, TJ = 150°C) (VR = 70 Vdc, TJ = 150°C) V(BR) IR 70 –– –– –– –– –– –– –– –– –– –– –– 2.5 30 50 1.5 715 855 1000 1250 6.0 1.75 Vdc µAdc Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage CD (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF pF mVdc Reverse Recovery Time RL = 100 Ω (IF=IR=10 mAdc, iR(REC)=1.0mAdc) (Figure 1) Forward Recovery Voltage (IF = 10 mA, t r = 20 ns) 1. FR–5 = 1.0 × 0.75 × 0.062 in. 2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina. trr VFR ns V +10 V 820 Ω 2.0 k 0.1µF tr tp 10% t IF t rr t 100 µH IF 0.1 µF 50 Ω OUTPUT PULSE GENERATOR D.U.T. 50 Ω INPUT SAMPLING OSCILLOSCOPE 90% V R INPUT SIGNAL IR i R(REC) = 1.0 mA OUTPUT PULSE (I F = I R = 10 mA; MEASURED at i R(REC) = 1.0 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA. Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA. Notes: 3. t p » t rr Figure 1. Recovery Time Equivalent Test Circuit BAV99WT1 BAV99RWT1–2/3 LESHAN RADIO COMPANY, LTD. BAV99WT1 BAV99RWT1 100 10 IF , FORWARD CURRENT (mA) IR , REVERSE CURRENT (µA) 1.0 10 0.1 1.0 0.01 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0 10 20 30 40 50 VF , FORWARD VOLTAGE (VOLTS) VR , REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 CD DIODE CAPACITANCE (pF) 0.64 0.60 0.56 0.52 0 2 4 6 8 VR , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance BAV99WT1 BAV99RWT1–3/3