BAW56LT1

LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Anode BAW56LT1 3 ANODE 1 CATHODE 2 CATHODE 1 2 3 MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF I FM(surge) Symbol PD Value 70 200 500 Max 225 1.8 556 300 Unit Vdc mAdc mAdc Unit mW mW /°C °C/W mW CASE 318–08, STYLE12 SOT– 23 (TO–236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (1) T A = 25 °C erate above 25 °C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25 °C Derate above 25 °C Thermal Resistance, Junction to Ambient Junction and Storage Temperature R θJA PD R θJA T J , T stg 2.4 mW /°C 417 °C/W -55 to +150 °C DEVICE MARKING BAW56LT1 = A1 ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted) (EACH DIODE) Characteristic Symbol V (BR) IR – – – – 30 2.5 50 2.0 Min 70 Max – Unit Vdc µ Adc OFF CHARACTERISTICS Reverse Breakdown Voltage (I (BR) = 100 µAdc) Reverse Voltage Leakage Current (V R = 25 Vdc, T J = 150 °C) (V R = 70 Vdc) (V R = 70 Vdc, T J = 150 °C) Diode Capacitance (V R = 0, f = 1.0 MHz) Forward Voltage (I F = 1.0 mAdc) (I F = 10 mAdc) (I F = 50 mAdc) (I F = 150 mAdc) Reverse Recovery Time (I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc) (Figure 1) R L = 100Ω 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. C V D pF mVdc F t rr – – – – – 715 855 1000 1250 6.0 ns G13–1/2 LESHAN RADIO COMPANY, LTD. LT B A W 5 6 LT 1 +10 V 820 Ω 2.0 k 0.1µF tr tp 10% t IF t rr t 100 µH IF 0.1 µF 50 Ω OUTPUT PULSE GENERATOR DUT 50 Ω INPUT SAMPLING OSCILLOSCOPE 90% i R(REC) = 1.0 mA INPUT SIGNAL V R IR OUTPUT PULSE (I F = I R = 10 mA; MEASURED at i R(REC) = 1.0 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA. Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA. Notes: 3. t p » t rr Figure 1. Recovery Time Equivalent Test Circuit CURVES APPLICABLE TO EACH CATHODE 100 10 T A = 150°C I F , FORWARD CURRENT (mA) T A = 85°C 10 I R , REVERSE CURRENT (µA) 1.0 T A = 125°C T A = – 40°C 0.1 T A = 85°C T A = 55°C 1.0 T A = 25°C 0.01 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0 10 T A = 25°C 20 30 40 50 V F , FORWARD VOLTAGE (VOLTS) V R , REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage 1.75 Figure 3. Leakage Current C D ,DIODE CAPACITANCE (pF) 1.5 1.25 1.0 0.75 0 2 4 6 8 V R , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance G13–2/2