BB535

LESHAN RADIO COMPANY, LTD. Silicon Variable Capacitance Diode • For UHF and TV/TR tuners • Large capacitance ratio, low series resistance 1 BB 535 1 CATHODE 2 ANODE 2 CASE 477– 02, STYLE 1 SOD– 323 MAXIMUM RATINGS Parameter Diode Reverse Voltage Peak reverse voltage ( R > 5kΩ) Forward Current Operating temperature range Storage temperature Symbol VR V RM IF T op T stg Value 30 35 20 - 55 ~ + 125 - 55 ... + 150 Unit V V mA °C °C THERMAL RESISTANCE P arameter Junction - ambient Symbol R thJA Value < 450 Unit K/W DC CHARACTERISTICS Characteristic Reverse current V R = 30 V, T A = 25 °C V R = 30 V, T A = 85 °C Symbol IR Min – – Typ – – Max 10 200 Unit nA AC CHARACTERISTICS Diode capacitance V R = 1 V, f = 1 MHz V R = 2 V, f = 1 MHz V R = 25 V, f = 1 MHz V R = 28 V, f = 1 MHz Capacitance ratio V R = 2 V, V R = 25 V, f = 1 MHz Capacitance ratio V R = 1 V, V R = 28 V, f = 1 MHz Capacitance matching V R = 1 ... 28 V, f = 1 MHz Series resistance V R = 3 V, f = 470 MHz Series inductance CT 17.5 14.01 2.05 1.9 C T2 / C T25 6 C T1 / C T28 8.2 ∆ C T/ C T – r s pF 18.7 15 2.24 2.1 6.7 8.9 – 0.55 2 20 16.1 2.4 2.3 – 7.5 – 9.8 % 2.5 Ω – – 0.65 – nH Ls S6–1/3 LESHAN RADIO COMPANY, LTD. BB 535 Diode capacitance C T = f ( V R ) f = 1MHz 20 18 16 Temperature coefficient of the diodecapacitance T Cc = f ( V R ) f = 1MHz 10 -1 10 -2 14 C T ( pF ) 12 10 8 6 T Cc ( 1/°C ) 10 -3 10 -4 4 2 0 0 5 10 15 20 25 30 10 -5 10 0 10 1 10 2 V R( V ) V R( V ) Normalized diode capacitance C (T A) / C (25°C) = f ( T A ), f = 1MHz, V R = Parameter 1.06 10 3 Reverse current I R = f ( T A ), V R = 28V 1.04 1V 1.02 2V C TA / C 25 10 2 25V 1.00 I R ( pA ) 10 1 10 0 -10 0.98 0.96 -30 -10 10 30 50 70 90 110 10 30 50 70 90 100 T A ( °C ) T A ( °C ) S6–2/3 LESHAN RADIO COMPANY, LTD. BB 535 Reverse current I R = f ( V R ), T A = Parameter 10 3 85°C 10 2 I R ( pA ) 25°C 10 1 10 0 10 -1 10 0 10 1 10 2 V R( V ) S6–3/3