BC807-40LT1

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon 3 COLLECTOR 2 BASE BC807-16LT1 BC807-25LT1 BC807-40LT1 1 EMITTER MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO 3 Value –45 –50 –5.0 –500 Unit V V V mAdc 1 2 CASE 318–08, STYLE 6 SOT–23 (TO–236AB) IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD 225 1.8 556 300 2.4 417 –55 to +150 mW mW/°C °C/W mW mW/°C °C/W °C Max Unit R θJA PD R θJA T J , T stg DEVICE MARKING BC807–16LT1 = 5A; BC807–25LT1 = 5B; BC807–40LT1 = 5C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mA) Collector–Emitter Breakdown Voltage (VEB = 0, I C = –10µA) Emitter–Base Breakdown Voltage (IE = –1.0 µA) Collector Cutoff Current (VCB = –20 V) (VCB = –20 V, T J = 150°C) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)EBO I CBO — — — — –100 –5.0 nA µA –5.0 — — V V (BR)CES –50 — — V V (BR)CEO –45 — — V M1–1/2 LESHAN RADIO COMPANY, LTD. BC807-16LT1 BC807-25LT1 BC807-40LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC= –100 mA, VCE = –1.0 V) h FE BC807–16 BC807–25 BC807–40 100 160 250 40 V CE(sat) — — — — — — 250 400 600 — –0.7 V — (IC = –500 mA, VCE = –1.0 V) Collector–Emitter Saturation Voltage (IC = –500 mA, IB = –50 mA) Base–Emitter On Voltage (IC = –500 mA, IB= –1.0 V) V BE(on) — — –1.2 V SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 V, f = 1.0 MHz) fT C obo 100 — — 10 — — MHz pF M1–2/2