BC817-40LT1

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon 3 COLLECTOR 1 BASE BC817-16LT1 BC817-25LT1 BC817-40LT1 3 2 EMITTER MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO IC Value 45 50 5.0 500 Unit V V V mAdc 1 2 CASE 318–08, STYLE 6 SOT–23 (TO–236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD 225 1.8 556 300 2.4 417 –55 to +150 mW mW/°C °C/W mW mW/°C °C/W °C Max Unit R θJA PD R θJA T J , T stg DEVICE MARKING BC817–16LT1 = 6A; BC817–25LT1 = 6B; BC817–40LT1 = 6C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mA) Collector–Emitter Breakdown Voltage (VEB = 0, IC = –10 µA) Emitter–Base Breakdown Voltage (I E = –1.0 µA) Collector Cutoff Current (VCB = 20 V) (VCB = 20 V, TA = 150°C) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)EBO V (BR)CEO 45 — — V V (BR)CES 50 — — V 5.0 — — V I CBO — — — — 100 5.0 nA µA M2–1/2 LESHAN RADIO COMPANY, LTD. BC817-16LT1 BC817-25LT1 BC817-40LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (I C= 100 mA, V CE = 1.0 V) h FE BC817–16 BC817–25 BC817–40 100 160 250 40 V CE(sat) — — — — — — 250 400 600 — 0.7 V — (I C = 500 mA, V CE = 1.0 V) Collector–Emitter Saturation Voltage (I C = 500 mA, I B = 50 mA) Base–Emitter On Voltage ( I C = 500 mA, V CE = 1.0 V) V BE(on) — — 1.2 V SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product ( I C = 10 mA, V CE = 5.0 V dc, f = 100 MHz) Output Capacitance (V CB = 10 V, f = 1.0 MHz) fT C obo 100 — — 10 — — MHz pF M2–2/2