BC848AWT1

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. 1 BASE 3 COLLECTOR BC846AWT1,BWT1 BC847AWT1,BWT1 CWT1 BC848AWT1,BWT1 CWT1 3 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO 2 EMITTER BC846 65 80 6.0 100 BC847 45 50 6.0 100 BC848 30 30 5.0 100 Unit V V V mAdc 1 2 CASE 419–02, STYLE 3 SOT–323 /SC–70 IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Junction and Storage Temperature Symbol PD R θJA PD T J , T stg Max 150 833 2.4 –55 to +150 Unit mW °C/W mW/°C °C DEVICE MARKING BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F; BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mA) Collector–Emitter Breakdown Voltage (IC = 10 µA, VEB = 0) Collector–Base Breakdown Voltage (IC = 10 µA) Emitter–Base Breakdown Voltage (IE = 1.0 µA) BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series, BC848 Series V (BR)CEO 65 45 30 80 50 30 80 50 30 6.0 6.0 5.0 — — — — — — — — — — — — — — — — — — — — — — — — — — — — 15 5.0 v V (BR)CES v V (BR)CBO v V (BR)EBO I CBO v nA µA Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) 1.FR–5=1.0 x 0.75 x 0.062in K4–1/4 LESHAN RADIO COMPANY, LTD. BC846AWT1,BWT1 BC847AWT1,BWT1 CWT1 BC848AWT1,BWT1,CWT1 ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (I C = 10 µA, V CE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C (I C = 2.0 mA, V CE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C Collector–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) Collector–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA) Base–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) Base–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA) Base–Emitter Voltage (I C = 2.0 mA, V CE = 5.0 V) Base–Emitter Voltage (I C = 10 mA, V CE = 5.0 V) h FE — — — 110 200 420 — — — — 580 — 90 150 270 180 290 520 — — 0.7 0.9 660 — — — — 220 450 800 0.25 0.6 — — 700 770 — V CE(sat) V BE(sat) V V mV V BE(on) SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = 10 mA, V CE = 5.0 Vdc, f = 100 MHz) Output Capacitance (V CB = 10 V, f = 1.0 MHz) Noise Figure (I C = 0.2 mA, BC846A, BC847A, BC848A V CE = 5.0 Vdc, R S = 2.0 kΩ, BC846B, BC847B, BC848B f = 1.0 kHz, BW = 200 Hz) BC847C, BC848C fT Cobo NF 100 — — — — — — — — 4.5 10 4.0 MHz pF dB hFE, NORMALIZED DC CURRENT GAIN 2.0 1.5 1.0 V C E = 10 V T A = 25°C 0.9 0.8 0.7 0.6 T A = 25°C V BE(sat) @ I C /I B=10 V BE(on) @ V CE = 10 V 1.0 0.8 0.6 V, VOLTAGE (VOLTS) 0.5 0.4 0.3 0.2 0.1 0 0.4 0.3 V CE(sat) @ I C /I B = 10 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 2.0 θVB , TEMPERATURE COEFFICIENT (mV/ °C) I C , COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain VCE, COLLECTOR– EMITTER VOLTAGE (V) I C , COLLECTOR CURRENT (mAdc) Figure 2. “Saturation” and “On” Voltages 1.0 T A = 25°C 1.6 –55°C to +125°C 1.2 I C= 200 mA 1.2 1.6 IC= 0.8 IC= I C = 50 mA 10 mA 20 mA I C = 100 mA 2.0 2.4 0.4 2.8 0 0.02 0.1 1.0 10 20 0.2 1.0 10 100 I B , BASE CURRENT (mA) Figure 3. Collector Saturation Region I C , COLLECTOR CURRENT (mA) Figure 4. Base–Emitter Temperature Coefficient K4–2/4 LESHAN RADIO COMPANY, LTD. BC846AWT1, BWT1 BC847AWT1, BWT1, CWT1 BC848AWT1, BWT1, CWT1 BC847/BC848 10.0 fT, CURRENT– GAIN – BANDWIDTH PRODUCT (MHz) V, VOLTAGE (VOLTS) 7.0 5.0 3.0 C ob 2.0 C ib T A = 25°C 400 300 200 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.010 20 30 50 V CE = 10V T A = 25°C 1.0 0.4 0.6 0.81.0 2.0 4.0 6.0 8.010 20 40 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mAdc) Figure 5. Capacitances hFE , DC CURRENT GAIN (NORMALIZED) Figure 6. Current–Gain – Bandwidth Product 1.0 V CE = 5 V T A = 25°C 2.0 1.0 0.5 T A = 25°C 0.8 V, VOLTAGE (VOLTS) V BE(sat) @ I C /I B = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 VCE(sat) @ I C /I B= 10 0.2 0 0.1 0.2 1.0 10 100 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 7. DC Current Gain V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS) Figure 8. “On” Voltage θVB , TEMPERATURE COEFFICIENT (mV/°C) 2.0 T A= 25°C –1.0 –1.4 –1.8 –2.2 –2.6 –3.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 I C , COLLECTOR CURRENT (mA) 1.6 20mA 50mA 100mA 200mA 1.2 0.8 0.4 0 0.02 IC = 10 mA θ VB for V BE –55°C to 125°C 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 I B , BASE CURRENT (mA) Figure 9. Collector Saturation Region Figure 10. Base–Emitter Temperature Coefficient K4–3/4 LESHAN RADIO COMPANY, LTD. BC846AWT1, BWT1 BC847AWT1, BWT1, CWT1 BC848AWT1, BWT1, CWT1 BC846 40 T A= 25°C C, CAPACITANCE (pF) fT, CURRENT– GAIN – BANDWIDTH PRODUCT T 500 200 100 50 20 20 C ib 10 6.0 4.0 C ob V CE= 5 V T A= 25°C 2.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 V R , REVERSE VOLTAGE (VOLTS) 50 100 1.0 5.0 10 50 100 I C , COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current–Gain – Bandwidth Product K4–4/4