BC856BWT1

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ SC–70 which is designed for low power surface mount applications. 3 COLLECTOR 1 BASE BC856AWT1, BWT1 BC857AWT1, BWT1 BC858AWT1, BWT1 CWT1 3 2 EMITTER MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO BC856 –65 –80 –5.0 –100 BC857 –45 –50 –5.0 –100 BC858 –30 –30 –5.0 –100 Unit V V V mAdc 1 2 CASE 419–02, STYLE 3 SOT– 323 / SC-70 IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R θJA T J , T stg Max 150 833 –55 to +150 Unit mW °C/W °C DEVICE MARKING BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F; BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mA) BC856 Series BC857 Series BC858 Series Collector–Emitter Breakdown Voltage BC856 Series (IC = –10 µA, VEB = 0) BC857 Series BC858 Series Collector–Base Breakdown Voltage BC856 Series (IC = – 10 µA) BC857 Series BC858 Series Emitter–Base Breakdown Voltage BC856 Series (IE = – 1.0 µA) BC857 Series, BC858 Series Collector Cutoff Current (VCB = – 30 V) (VCB = – 30 V, TA = 150°C) 1.FR–5=1.0 x 0.75 x 0.062in V (BR)CEO V (BR)CES V (BR)CBO V (BR)EBO I CBO – 65 – 45 – 30 – 80 – 50 – 30 – 80 – 50 – 30 – 5.0 – 5.0 – 5.0 — — — — — — — — — — — — — — — — — — — — — — — — — — — — – 15 – 4.0 v v v v nA µA K5–1/5 LESHAN RADIO COMPANY, LTD. BC856AWT1, BWT1 BC857AWT1, BWT1 BC858AWT1, BWT1, CWT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS BC856A, BC857A, BC858A BC856B, BC857B, BC858B BC858C, (I C = –2.0 mA, V CE = –5.0 V) BC856A, BC857A, BC858A BC856B, BC857B, BC858B BC858C Collector–Emitter Saturation Voltage (I C = –10 mA, I B = – 0.5 mA) Collector–Emitter Saturation Voltage (I C = –100 mA, I B = – 5.0 mA) Base–Emitter Saturation Voltage (I C = –10 mA, I B = –0.5 mA) Base–Emitter Saturation Voltage (I C = –100 mA, I B = –5.0 mA) Base–Emitter Voltage (I C = –2.0 mA, V CE = –5.0 V) Base–Emitter Voltage (I C = –10 mA, V CE = –5.0 V) DC Current Gain (I C = –10 µA, V CE = –5.0 V) h FE — — — 125 220 420 — — — — – 0.6 — 90 150 270 180 290 520 — — – 0.7 – 0.9 — — — — — 250 475 800 – 0.3 – 0.65 — — – 0.75 – 0.82 — V V V CE(sat) V V V BE(sat) BE(on) SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = – 10 mA, V CE = – 5.0 Vdc, f = 100 MHz) Output Capacitance (V CB = – 10 V, f = 1.0 MHz) Noise Figure (I C= – 0.2 mA,V CE= – 5.0 Vdc, R S= 2.0 kΩ, f =1.0 kHz, BW= 200 Hz) fT Cob NF 100 — –– — — –– — 4.5 10 MHz pF dB K5–2/5 LESHAN RADIO COMPANY, LTD. BC856AWT1, BWT1 BC857AWT1, BWT1, BC858AWT1, BWT1, CWT1 BC857/BC858 2.0 –1.0 hFE, NORMALIZED DC CURRENT GAIN 1.5 VCE= –10 V T A = 25°C V, VOLTAGE (VOLTS) –0.9 –0.8 –0.7 –0.6 –0.5 –0.4 –0.3 –0.2 –0.1 T A = 25°C V BE(sat) @ I C /I B=10 1.0 0.7 V BE(on) @ V CE = –10 V 0.5 0.3 V CE(sat) @ I C /I B = 10 0.2 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 I C , COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain θVB , TEMPERATURE COEFFICIENT (mV/ °C) I C , COLLECTOR CURRENT (mAdc) Figure 2. “Saturation” and “On” Voltages VCE, COLLECTOR– EMITTER VOLTAGE (V) –2.0 1.0 T A = 25°C –1.6 –55°C to +125°C 1.2 1.6 –1.2 2.0 –0.8 IC= –10 mA I C= –50 mA I C= –200 mA I C= –100 mA 2.4 –0.4 I C= –20 mA 2.8 0 –0.02 –0.1 –1.0 –10 –20 –0.2 –1.0 –10 –100 I B , BASE CURRENT (mA) Figure 3. Collector Saturation Region I C , COLLECTOR CURRENT (mA) Figure 4. Base–Emitter Temperature Coefficient 10.0 400 C ib T A=25°C C, CAPACITANCE(pF) 5.0 300 fT, CURRENT– GAIN – BANDWIDTH PRODUCT (MHz) 7.0 200 150 100 80 V CE = –10V T A = 25°C 3.0 C ob 2.0 60 40 30 20 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –50 1.0 –0.4 –0.6 –1.0 –2.0 –4.0 –6.0 –10 –20 –30 –40 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current–Gain – Bandwidth Product K5–3/5 LESHAN RADIO COMPANY, LTD. BC856AWT1, BWT1 BC857AWT1, BWT1, BC858AWT1, BWT1, CWT1 BC856 hFE , DC CURRENT GAIN (NORMALIZED) –1.0 V CE = –5.0V T A = 25°C 2.0 1.0 0.5 0.2 0 –0.1–0.2 –1.0 –2.0 –5.0 –10 –20 –50 –100–200 I C , COLLECTOR CURRENT (mA) –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 T J= 25°C V, VOLTAGE (VOLTS) –0.8 VBE(sat) @ I C/I B=10 –0.6 –0.4 –0.2 VCE(sat) @ I C /I B= 10 VBE @VCE= –5.0 V I C , COLLECTOR CURRENT (mA) Figure 7. DC Current Gain V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS) Figure 8. “On” Voltage θVB , TEMPERATURE COEFFICIENT (mV/°C) –2.0 –1.6 IC = –20mA –50mA –100mA –200mA –1.0 –1.4 –1.8 –2.2 –2.6 –3.0 –0.2 –1.2 –0.8 –0.4 –10mA θ VB for V BE –55°C to 125°C TJ= 25°C 0 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 I B , BASE CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 9. Collector Saturation Region Figure 10. Base–Emitter Temperature Coefficient fT, CURRENT– GAIN – BANDWIDTH PRODUCT T 40 C, CAPACITANCE (pF) 20 T J= 25°C C ib 500 200 100 50 20 VCE= –5.0V 10 6.0 4.0 2.0 –0.1 –0.2 –0.5 C ob –1.0 –2.0 –5.0 –10 –20 –50 –100 –1.0 –10 –100 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current–Gain – Bandwidth Product K5–4/5 LESHAN RADIO COMPANY, LTD. BC856AWT1, BWT1 BC857AWT1, BWT1, BC858AWT1, BWT1, CWT1 r( t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 D=0.5 0.2 SINGLE PULSE 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.05 SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t 1 /t 2 Z θJC (t) = r(t) R θJC R θJC = 83.3°C/W MAX Z θJA (t) = r(t) R θJA R θJA = 200°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) – T C = P (pk) R θJC (t) 0.2 0.5 1.0 2.0 5.0 10 20 t, TIME (ms) 50 100 200 500 1.0k 2.0k 5.0k 10k Figure 13. Thermal Response –200 1s I C , COLLECTOR CURRENT (mA) 3 ms –100 –50 TA= 25°C TJ= 25°C –10 –5.0 BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT The safe operating area curves indicate I C –V CE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon T J(pk) = 150°C; T C or T A is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided T J(pk) < 150°C. T J(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. –2.0 –1.0 –0.5 –10 –30 –45 –65 –100 V CE , COLLECTOR–EMITTER VOLTAGE (V) Figure 14. Active Region Safe Operating Area K5–5/5