BCW65ALT1

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon 3 COLLECTOR BCW65ALT1 3 1 BASE MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO IC Value 32 60 5.0 800 2 EMITTER 1 2 Unit Vdc Vdc Vdc mAdc CASE 318–08, STYLE 6 SOT–23 (TO–236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ , Tstg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING BCW65ALT1 = EA ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10mAdc, I B= 0 ) Collector–Emitter Breakdown Voltage (IC = 10 µAdc, V EB = 0 ) Emitter–Base Breakdown Voltage (I E= 10 µAdc, I C = 0) Collector Cutoff Current (VCE = 32 Vdc, IE = 0 ) (VCE = 32 Vdc, IE = 0 , TA = 150°C) Emitter Cutoff Current (V EB= 4.0 Vdc, I C = 0) I EBO — — 20 nAdc V (BR)EBO V (BR)CEO 32 — — Vdc V (BR)CES 60 — — Vdc 5.0 — — Vdc I CES — — — — 20 20 nAdc µAdc 1. FR– 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. M11–1/2 LESHAN RADIO COMPANY, LTD. BCW65ALT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol hFE 35 75 100 35 V CE(sat) — — V BE(sat) Min Typ Max Unit — ON CHARACTERISTICS DC Current Gain ( IC= 100 µAdc, VCE = 10 Vdc ) ( IC= 10 mAdc, VCE = 1.0 Vdc ) ( IC= 100 mAdc, VCE = 1.0 Vdc ) ( IC= 500 mAdc, VCE = 2.0 Vdc ) Collector–Emitter Saturation Voltage ( IC = 500 mAdc, IB = 50 mAdc ) ( IC = 100 mAdc, IB = 10 mAdc ) Base–Emitter Saturation Voltage ( IC = 500 mAdc, IB = 50 mAdc ) — — — — 0.7 0.3 — — 220 250 — Vdc — — Vdc — 2.0 SMSMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product fT (I C = 20mAdc, V CE = 10 Vdc, f = 100 MHz) Output Capacitance C obo (V CB= 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance C ibo (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Noise Figure NF (V CE = 5.0 Vdc, I C = 0.2 mAdc, R S = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) 100 — — — — — — — — 12 80 10 MHz pF pF dB SWITCHING CHARACTERISTICS Turn–On Time (I B1= I B2= 15 mAdc) Turn–Off Time (I C= 150 mAdc, R L = 150 Ω ) t on t off — — — — 100 400 ns ns M11–2/2