BCW68GLT1

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon BCW68GLT1 3 COLLECTOR 1 BASE 1 2 3 2 EMITTER MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V V V CEO CBO EBO Value – 45 – 60 – 5.0 – 800 Unit Vdc Vdc Vdc mAdc CASE 318–08, STYLE 6 SOT–23 (TO–236AB) IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ , Tstg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING BCW68GLT1 = DH ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0 ) Collector–Emitter Breakdown Voltage (IC = –10 µAdc, VEB = 0 ) Emitter–Base Breakdown Voltage (I E= –10 µAdc, I C = 0) Collector Cutoff Current (VCE = –45 Vdc, I E= 0 ) (VCE = –45 Vdc, I B= 0 , TA = 150°C) Emitter Cutoff Current (VEB = – 4.0 Vdc, I C = 0) 1. FR– 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. I EBO V (BR)CEO V (BR)CES V (BR)EBO – 45 – 60 – 5.0 — — — — — — Vdc Vdc Vdc I CES — — — — — — – 20 – 10 – 20 nAdc µAdc nAdc M12–1/2 LESHAN RADIO COMPANY, LTD. BCW68GLT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol hFE 120 160 60 V CE(sat) V BE(sat) Min Typ Max Unit — ON CHARACTERISTICS DC Current Gain ( IC= –10 mAdc, VCE = –1.0 Vdc ) ( IC= –100 mAdc, VCE = –1.0 Vdc ) ( IC= –300 mAdc, VCE = –1.0 Vdc ) Collector–Emitter Saturation Voltage ( IC = – 300 mAdc, IB = –30 mAdc ) Base–Emitter Saturation Voltage ( IC = – 500 mAdc, IB = –50 mAdc ) — — — — — 400 — — – 1.5 – 2.0 Vdc Vdc — — SMSMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product fT (I C = –20mAdc, V CE = –10 Vdc, f = 100 MHz) Output Capacitance C obo (V CB = – 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance C ibo (V EB = –0.5 Vdc, I C = 0, f = 1.0 MHz) Noise Figure NF (V CE = – 5.0 Vdc, I C = – 0.2 mAdc, R S = 1.0 kΩ, f = 1.0 kHz, BW = 200 Hz) 100 — — MHz — — — — — — 18 105 10 pF pF dB M12–2/2