BCX18LT1

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1 Voltage and current are negative for PNP transistors 3 COLLECTOR 3 COLLECTOR 1 BASE 1 BASE 2 EMITTER 2 EMITTER 3 MAXIMUM RATINGS Value Rating Symbol BCX17LT1 BCX19LT1 45 50 5.0 500 BCX18LT1 BCX20LT1 25 30 5.0 500 Unit 1 2 CASE 318–08, STYLE 6 Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous V V V CEO CBO EBO Vdc Vdc Vdc mAdc SOT–23 (TO–236AB) IC DEVICE MARKING BCX17LT1 = T1; BCX18LT1 = T2; BCX19LT1 = U1; BCX20LT1 = U2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Symbol PD Max 225 1.8 R θJA PD 556 300 2.4 R θJA T J , T stg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C M15–1/2 LESHAN RADIO COMPANY, LTD. PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 10 mAdc, I B = 0) BCX17, 19 BCX18, 20 Collector–Emitter Breakdown Voltage (I C = 10 µAdc, I C = 0) BCX17, 19 BCX18, 20 Collector Cutoff Current (V CB = 20 Vdc, I E = 0) (V CB = 20 Vdc, I E = 0, T A = 150°C ) Emitter Cutoff Current (V EB = 5.0 Vdc, I C = 0) V (BR)CEO 45 25 V (BR)CES 50 30 I CBO — — I EBO — — — — 100 5.0 10 nAdc µAdc µAdc — — — — — — — — Vdc Vdc ON CHARACTERISTICS DC Current Gain ( IC= 100 mAdc, VCE = 1.0 Vdc ) ( IC= 300 mAdc, VCE = 1.0 Vdc ) ( IC= 500 mAdc, VCE = 1.0 Vdc ) Collector–Emitter Saturation Voltage ( IC = 500mAdc, IB = 50mAdc ) Base–Emitter On Voltage ( IC = 500 mAdc, VCE = 1.0 Vdc ) hFE 100 70 40 V CE(sat) — — — — — 600 — — 0.62 Vdc — V BE(on) — — 1.2 Vdc M15–2/2