BSS63LT1

LESHAN RADIO COMPANY, LTD. High Voltage Transistors PNP Silicon 3 COLLECTOR BSS63LT1 3 1 BASE 1 2 2 EMITTER CASE 318–08, STYLE 6 SOT– 23 (TO–236AB) MAXIMUM RATINGS Rating Collector– Emitter Voltage Collector– Emitter Voltage (R BE = 10 k Ω) Collector Current — Continuous Symbol V CEO V CER IC Value –100 –110 –100 Unit Vdc Vdc mAdc DEVICE MARKING BSS63LT1 = T1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 R θJA PD 556 300 2.4 R θJA T J , T stg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ — — — — — — — Max — — — — – 100 – 10 – 200 Unit Vdc Vdc Vdc Vdc µAdc µAdc µAdc Collector–Emitter Breakdown Voltage V (BR)CEO – 100 (IC = –100 µA) Collector–Emitter Breakdown Voltage V (BR)CER – 110 (IC = –10 µAdc , I E =0, R BE =10 kΩ ) Collector–Base Breakdown Voltage V (BR)CBO – 110 (IE = – 10 µAdc, I E =0 ) Emitter –Base Breakdown Voltage V (BR)CBO – 6.0 (IE = – 10 µA) Collector Cutoff Current I CBO — (VCB = – 90 Vdc, I E =0 ) Collector Cutoff Current I CER — (VCB = – 110 Vdc, R BE =10 kΩ ) Emitter Cutoff Current I EBO — (VEB = – 6.0 Vdc, I C = 0 ) 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company. M39–1/2 LESHAN RADIO COMPANY, LTD. BSS63LT ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (I C = –10 mAdc, V CE = –1.0 Vdc) (I C = –25 mAdc, V CE = –1.0 Vdc) Collector–Emitter Saturation Voltage (I C = –25 mAdc, I B = –2.5 mAdc) Base–Emitter Saturation Voltage (I C = –25 mAdc, I B = –2.5 mAdc) h FE 30 30 V CE(sat) — V BE(sat) — fT 50 C C –– –– –– — — –– –– mVdc –250 mVdc –900 MHz 95 — — pF — 20 SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = –25 mAdc, V CE = –5.0 Vdc, f = 20 MHz) Case Capacitance (I E = I C = 0, V CB = –10 Vdc, f = 1.0 MHz) M39–2/2