BSS64LT1

LESHAN RADIO COMPANY, LTD. Driver Transistors NPN Silicon 3 COLLECTOR BSS64LT1 3 1 BASE 2 EMITTER 1 2 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V V V CEO CBO EBO Value 80 120 5.0 100 Unit Vdc Vdc Vdc mAdc CASE 318–08, STYLE 6 SOT–23 (TO–236AB) IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ , Tstg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING BSS64LT1 = AM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 4.0 mAdc ) Collector–Base Breakdown Voltage (I C = 100 µAdc ) Emitter–Base Breakdown Voltage (I E = 100 µAdc ) Collector Cutoff Current ( V CB = 90 Vdc ) ( T A = 150°C ) Emitter Cutoff Current ( V EB = 4.0Vdc ) I EBO V (BR)CBO V (BR)EBO I CBO — — — 0.1 500 200 nAdc 120 5.0 — — Vdc Vdc nAdc V (BR)CEO 80 — Vdc 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company. M40–1/2 LESHAN RADIO COMPANY, LTD. BSS64LT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (I C = 10 mAdc, V CE = 1.0 Vdc) Collector–Emitter Saturation Voltage (I C = 4.0mAdc, I B = 0.4 mAdc) (I C = 50mAdc, I B = 15 mAdc) Forward Base–Emitter Voltage hFE VCE(sat) — — — 0.15 0.2 — 20 — — Vdc V BE(sat) — SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = 4.0 mAdc, V CE = 10 Vdc, f = 20 MHz) Output Capacitance (V CB = 10 Vdc, f = 1.0 MHz) fT C ob 60 — — 20 MHz pF M40–2/2