BWT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ SC–70 which is designed for low power surface mount applications. Features We declare that the material of product compliance with RoHS requirements. LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G CWT1G 3 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO BC856 –65 –80 –5.0 –100 BC857 –45 –50 –5.0 –100 BC858 –30 –30 –5.0 –100 Unit V V V mAdc 1 2 SOT– 323 / SC-70 IC 3 COLLECTOR THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R θJA T J , T stg Max 150 833 –55 to +150 Unit mW °C/W °C 2 EMITTER 1 BASE DEVICE MARKING LBC856AWT1G= 3A; LBC856BWT1G= 3B; LBC857AWT1G= 3E; LBC857BWT1G = 3F; LBC858AWT1G= 3J; LBC858BWT1G= 3K; LBC858CWT1G= 3L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mA) Collector–Emitter Breakdown Voltage (IC = –10 µA, VEB = 0) Collector–Base Breakdown Voltage (IC = – 10 µA) Emitter–Base Breakdown Voltage (IE = – 1.0 µA) LBC856 Series LBC857 Series LBC858 Series LBC856 Series LBC857 Series LBC858 Series LBC856 Series LBC857 Series LBC858 Series LBC856 Series LBC857 Series LBC858 Series V (BR)CEO V (BR)CES V (BR)CBO V (BR)EBO Collector Cutoff Current (VCB = – 30 V) (VCB = – 30 V, TA = 150°C) 1.FR–5=1.0 x 0.75 x 0.062in I CBO – 65 – 45 – 30 – 80 – 50 – 30 – 80 – 50 – 30 – 5.0 – 5.0 – 5.0 — — — — — — — — — — — — — — — — — — — — — — — — — — — — – 15 – 4.0 v v v v nA µA 1/6 LESHAN RADIO COMPANY, LTD. LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G, CWT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (I C = –10 µA, V CE = –5.0 V) (I C = –2.0 mA, V CE = –5.0 V) LBC856A, LBC857A, LBC858A LBC856B,LBC857B, LBC858B LBC858C, LBC856A, LBC857A, LBC858A LBC856B,LBC857B, LBC858B LBC858C, h FE Collector–Emitter Saturation Voltage (I C = –10 mA, I B = – 0.5 mA) Collector–Emitter Saturation Voltage (I C = –100 mA, I B = – 5.0 mA) Base–Emitter Saturation Voltage (I C = –10 mA, I B = –0.5 mA) Base–Emitter Saturation Voltage (I C = –100 mA, I B = –5.0 mA) Base–Emitter Voltage (I C = –2.0 mA, V CE = –5.0 V) Base–Emitter Voltage (I C = –10 mA, V CE = –5.0 V) V V V CE(sat) BE(sat) BE(on) — — — 125 220 420 — — — — – 0.6 — 90 150 270 180 290 520 — — – 0.7 – 0.9 — — — — — 250 475 800 – 0.3 – 0.65 — — – 0.75 – 0.82 — V V V SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = – 10 mA, V CE = – 5.0 Vdc, f = 100 MHz) Output Capacitance (V CB = – 10 V, f = 1.0 MHz) Noise Figure (I C= – 0.2 mA,V CE= – 5.0 Vdc, R S= 2.0 kΩ, f =1.0 kHz, BW= 200 Hz) fT Cob NF 100 — –– — — –– — 4.5 10 MHz pF dB ORDERING INFORMATION ( Pb– Free ) Device LBC856AWT1G_S LBC856AWT3G_S Package SOT-23 SOT-23 Shipping 3000/Tape & Reel 10000/Tape & Reel 2/6 LESHAN RADIO COMPANY, LTD. LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G, CWT1G LBC857/LBC858 2.0 –1.0 hFE, NORMALIZED DC CURRENT GAIN 1.5 VCE= –10 V T A = 25°C V, VOLTAGE (VOLTS) –0.9 –0.8 –0.7 –0.6 –0.5 –0.4 –0.3 –0.2 –0.1 T A = 25°C V BE(sat) @ I C /I B=10 1.0 0.7 V BE(on) @ V CE = –10 V 0.5 0.3 V CE(sat) @ I C /I B = 10 0.2 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 I C , COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain θVB , TEMPERATURE COEFFICIENT (mV/ °C) I C , COLLECTOR CURRENT (mAdc) Figure 2. “Saturation” and “On” Voltages VCE, COLLECTOR– EMITTER VOLTAGE (V) –2.0 1.0 T A = 25°C –1.6 –55°C to +125°C 1.2 1.6 –1.2 2.0 –0.8 IC= –10 mA I C= –50 mA I C= –200 mA I C= –100 mA 2.4 –0.4 I C= –20 mA 2.8 0 –0.02 –0.1 –1.0 –10 –20 –0.2 –1.0 –10 –100 I B , BASE CURRENT (mA) Figure 3. Collector Saturation Region I C , COLLECTOR CURRENT (mA) Figure 4. Base–Emitter Temperature Coefficient 10.0 400 C 7.0 ib 300 T A=25°C C, CAPACITANCE(pF) 5.0 fT, CURRENT– GAIN – BANDWIDTH PRODUCT (MHz) 200 150 100 80 V CE = –10V T A = 25°C 3.0 C ob 2.0 60 40 30 20 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –50 1.0 –0.4 –0.6 –1.0 –2.0 –4.0 –6.0 –10 –20 –30 –40 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current–Gain – Bandwidth Product 3/6 LESHAN RADIO COMPANY, LTD. LBC856AWT1G, BWT1G LBC856 hFE , DC CURRENT GAIN (NORMALIZED) LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G, CWT1G –1.0 V CE = –5.0V V, VOLTAGE (VOLTS) T A = 25°C 2.0 1.0 0.5 0.2 0 –0.1–0.2 –1.0 –2.0 –5.0 –10 –20 –50 –100–200 I C , COLLECTOR CURRENT (mA) –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –0.8 VBE(sat) @ I C/I B=10 –0.6 –0.4 –0.2 VCE(sat) @ I C /I B= 10 VBE @VCE= –5.0 V T J= 25°C I C , COLLECTOR CURRENT (mA) Figure 7. DC Current Gain V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS) Figure 8. “On” Voltage θVB , TEMPERATURE COEFFICIENT (mV/°C) –2.0 –1.6 IC = –20mA –50mA –100mA –200mA –1.0 –1.4 –1.8 –2.2 –2.6 –3.0 –0.2 –1.2 –0.8 –0.4 –10mA θ VB for V BE –55°C to 125°C TJ= 25°C 0 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 I B , BASE CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 9. Collector Saturation Region Figure 10. Base–Emitter Temperature Coefficient fT, CURRENT– GAIN – BANDWIDTH PRODUCT T 40 C, CAPACITANCE (pF) T J= 25°C C ib 500 200 100 50 20 VCE= –5.0V 20 10 6.0 4.0 2.0 –0.1 –0.2 –0.5 C ob –1.0 –2.0 –5.0 –10 –20 –50 –100 –1.0 –10 –100 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current–Gain – Bandwidth Product 4/6 LESHAN RADIO COMPANY, LTD. LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G, CWT1G r( t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 D=0.5 0.2 SINGLE PULSE 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.05 SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t 1 /t 2 Z θJC (t) = r(t) R θJC R θJC = 83.3°C/W MAX Z θJA (t) = r(t) R θJA R θJA = 200°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) – T C = P (pk) R θJC (t) 0.2 0.5 1.0 2.0 5.0 10 20 t, TIME (ms) 50 100 200 500 1.0k 2.0k 5.0k 10k Figure 13. Thermal Response –200 1s I C , COLLECTOR CURRENT (mA) –100 –50 TA= 25°C TJ= 25°C 3 ms –10 –5.0 BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT The safe operating area curves indicate I C –V CE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon T J(pk) = 150°C; T C or T A is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided T J(pk) < 150°C. T J(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. –2.0 –1.0 –0.5 –10 –30 –45 –65 –100 V CE , COLLECTOR–EMITTER VOLTAGE (V) Figure 14. Active Region Safe Operating Area 5/6 LESHAN RADIO COMPANY, LTD. LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G LBC858AWT1G, BWT1G, CWT1G SC-70 / SOT-323 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A L 3 DIM A B C D G H J K L N S S 1 2 B D G C 0.05 (0.002) N K J INCHES MILLIMETERS MIN MA X MIN MA X 0.071 0.087 1.80 2.20 0.045 0.053 1.15 1.35 0.032 0.040 0.80 1.00 0.012 0.016 0.30 0.40 0.047 0.055 1.20 1.40 0.000 0.004 0.00 0.10 0.004 0.010 0.10 0.25 0.017 REF 0.425 REF 0.026 BSC 0.650 BSC 0.028 REF 0.700 REF 0.079 0.095 2.00 2.40 H PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.025 0.65 0.025 0.65 0.075 1.9 0.035 0.9 0.028 0.7 inches mm 6/6