EFMAF108

EFMAF101 thru EFMAF108 Surface Mount Glass Passivated Super Fast Rectifiers Reverse Voltage 50 to 600V Forward Current 1.0A FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * High temperature metallurgically bonded construction * For use in high frequency rectifier circuits * Fast switching for high efficiency * Cavity-free glass passivated junction * Capable of meeting environmental standards of MIL-S-19500 * 1.0 A operation at TC=75°C with no thermal runaway * Typical IR less than 1.0µA * High temperature soldering guaranteed: 260°C/10 seconds 2.Mechanical Data Case: JEDEC SMA-FL, molded plastic over glass body We declare that the material of product is Terminals: Plated leads, solderable per Haloggen free (green epoxy compound) MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:28mg Handling precautin:None Electrical Characteristic 1.Maximum & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbol symbol Device marking code EFMAF EFMAF EFMAF EFMAF EFMAF EFMAF EFMAF EFMAF 101 102 103 104 105 106 107 108 Unit EF1 EF2 EF3 EF4 EF5 EF6 EF7 EF8 Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 500 600 V Maximum RSM voltage VRSM 35 70 105 140 210 280 350 420 V Maximum DC blocking voltage VDC 50 100 150 200 300 400 500 600 V Maximum average forward rectified current at TC = 75°C IF(AV) Peak forward surge current 8.3ms single half sine-wave IFSM superimposed on rated load (JEDEC Method) Typical thermal resistance (Note 2) RθJA RθJL Operating junction and storage temperature range TJ, TSTG 1.0 A 30 A 150 35 °C/W –50 to +150 °C Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbol symbol Maximum instantaneous forward voltage at 1.0A VF Unit V 5.0 100 µA trr 35 ns CJ 15.0 PF Maximum DC reverse current TA = 25°C at rated DC blocking voltage Tj = 125°C IR Typical reverse recovery time (Note 1) Typical junction capacitance at 4.0V, 1MHz EFMAF EFMAF EFMAF EFMAF EFMAF EFMAF EFMAF EFMAF 101 102 103 104 105 106 107 108 1.7 0.95 1.25 NOTES: 1. IF = 0.5A, IR = 1.0A, IRR = 0.25A 2. 8.0mm2 (.013mm thick) land areas 3.VF & TRR & VDC & IR all test； other parameter is scheme out. Leshan Radio Company, LTD. Rev.B Jul. 2017 1/3 EFMAF101 thru EFMAF108 2.Ratings and Characteristic Curves ( TA = 25°C unless otherwise noted ) 1.0 0.5 0.375" (9.5mm) Lead Length 0 0 100 25 50 75 100 125 Case Temperature, °C 1.0 0.1 40 30 20 10 0 10 Number of Cycles at 60Hz Tj=125℃ 10 1.0 Tj=25℃ 0.1 0.01 0.8 1.0 1.2 1.4 1.6 Instantaneous Forward Voltage (V) 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig 6. – Typical Junction Capacitance 20 100 10 1 0.01 Leshan Radio Company, LTD. 0.1 1.0 10 t,Pulse duration,sec 100 100 Fig 5. –typical transient thermal impedance 1000 Transient thermal impedance(°C/W) TJ = TJ max 8.3ms Single Half Sine-wave (JEDEC Method) Fig 4. – Typical Reverse Characteristics TJ = 25°C Pulse width = 300µs 1% Duty Cycle 0.01 0.6 Fig. 2 – Maximum Non-repetitive Peak Forward Surge Current 1 Fig 3. – Typical Instantaneous Forward Characteristics 10 50 150 175 Instantaneous Reverse Current (µA) Instantaneous Forward Current (A) Average Forward Rectified Current (A) 60 Hz Resistive or Inductive Load Junction Capacitance (pF) Average Forward Rectified Current (A) Fig. 1 – Forward Current Derating Curve 100 TJ = 25°C f = 1.0 MHz Vsig = 50mVp-p 10 1.0 0.1 Rev.B Jul. 2017 1 10 Reverse Voltage (V) 100 2/3 3.OUTLINE AND DIMENSIONS SMA-FL DIM MIN MAX Typ. A 4.40 4.80 4.60 B 2.30 2.70 2.60 C 3.30 3.70 3.50 D 0.55 1.05 E 0.90 1.20 F 0.11 0.21 0.17 G 1.30 1.50 1.40 I 0.90 K 0.80 L 0.20 All Dimensions in mm GENERAL NOTES 1.Top package surface finish Ra0.4±0.2um 2.Bottom package surface finish Ra0.7±0.2um 4.SOLDERING FOOTPRINT SMA-FL DIM (mm) X 1.60 Y 1.80 B 3.70 Leshan Radio Company, LTD. Rev.B Jul. 2017 3/3 Title: Power Packages Product Packing Specification 功率产品包装规范 Document Number: APS-QA-QS-009 Proprietary Information Revision C Page 3 of 6 8.1.2 Label position and QA stamp position.(Empty area) 标签张贴位置及QA印章位置。（印章盖在标 签空白区 静电敏感器件标识 7英寸卷盘标签张贴及QA印章位置 13英寸卷盘标签张贴及QA印章位置 8.1.3 Ensure direction In the same reel. The same steel coil plate direction，With antistatic bubble to package reel。Refer to the below picture. 同一箱内的卷盘方向一致,用防静电泡沫对卷盘进行包裹。 7英寸卷盘防静电泡沫包裹 13英寸卷盘防静电泡沫包裹 Do not copy without written permission from Advanced Power Semiconductor Title: Power Packages Product Packing Specification 功率产品包装规范 Document Number: APS-QA-QS-009 Proprietary Information Revision C Page 4 of 6 8.1.4 Put in the antistatic packing box after packaged reels. And QA stamp on the box label . 将包装好的卷盘放入防静电纸箱中，并在盒标签上盖章。 7 英寸卷盘内盒及标签 8.1.5 Product use printing inner box. 13 英寸卷盘内盒及标签 产品使用LRC印字内箱。 印字内盒 印字内盒 7英寸卷盘内箱印字（侧面） 13英寸卷盘内箱印字（正面） 8.1.6 Inner box packing quantity requirement.内盒包装数量要求。 Product Description QTY SOD123-FL 1-10Reels SOD323-HE 1-10Reels SMA-FL 1-7Reels SMB-FL 1-4Reels 8.1.7 With transparent tape sealing. 透明胶带封箱。 Do not copy without written permission from Advanced Power Semiconductor Title: Power Packages Product Packing Specification 功率产品包装规范 Document Number: APS-QA-QS-009 Proprietary Information Revision C Page 5 of 6 7英寸内箱封盒 13英寸内箱封盒 8.1.8 Outer box size and packing quantity requirement,外箱尺寸及包装数量要求。 Product Description 卷盘尺寸 Height（H） Width（W） Length（L） Max. Qty Power Device 7 英寸 410mm 400mm 445mm 12 Power Device 13 英寸 410mm 400mm 445mm 5 统一方向 7 英寸卷盘产品装箱 13 英寸卷盘产品装箱 Do not copy without written permission from Advanced Power Semiconductor Title: Power Packages Marking & Taping Specification 功率封装字模和编带规范 Proprietary Information Document Number:APS-QA-QS-010 Revision C Page 6 of 9 8.2 Standard Products Taping Specification 标准产品编带规范 8.2.1 Tape length of no component 空带长度说明 Taping leader length 引导部分：440mm±40mm ，Tape trailer 尾部：200mm±40mmt 160mm-240mm 400mm-480mm TAPE LEADER 8.2.2 Component packaging orientation: The cathode lead is close to the carrier tape’s index hole. 产品放置方向：印阴极带引脚邻近载带索引孔 Do not copy without written permission from Advanced Power Semiconductor Title: Power Packages Marking & Taping Specification 功率封装字模和编带规范 Proprietary Information Document Number:APS-QA-QS-010 Revision C Page 7 of 9 8.2.3 Tape enwind orientation 编带缠绕方向要求 Do not copy without written permission from Advanced Power Semiconductor