FFM102

LESHAN RADIO COMPANY, LTD. FFM101 – FFM107 1A 1A FAST RECOVERY SMA DIODES Marking VRRM(V) Package Dimensions TYPE IF (A) V F (V) IRMI(µA) IP8M(A) Trr(ns) FFM101 FFM102 FFM103 FFM104 FFM105 FFM106 FFM107 FF1 FF2 FF3 FF4 FF5 FF6 FF7 50 100 200 400 600 800 1000 1.0 1.3 5.0 30 150 DO – 214AC 250 500 Trr I F =1A, I R = 0.5A, I RR = 0.25A Trr Test Conditions: I F = 1A, I R= 0.5A, I RR = 0.25A G B A H A .110(2.8) .086(2.2) E F D C B .067(1.7) .051(1.3) C .008 MAX (.2) D .091(2.3) .067(1.7) E .051(1.3) .008(0.2) F .059(1.5) .035(0.9) G .209(5.3) .185(4.7) H .059(1.5) .035(0.9) DO – 214AC 49A–1/2 LESHAN RADIO COMPANY, LTD. FFM101 – FFM107 1A RATING & CHARACTERISTIC CURVES OF 1A FAST RECOVERY SMA DIODES FIG.1–TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 Ω NONINDUCTIVE 10 Ω NONINDUCTIVE D.U.T. (-) PULSE G E N E R AT O R (NOTE 2) (+) 0 -0.25A FIG. 2 – TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT,(A) 1.25 1.00 0.75 0.50 0.25 0 25 50 75 100 125 150 175 Single Phase Half Wave 60Hz Resistive or Inductive Load +0.5A Trr (+) 25Vdc (APPROX) (-) 1Ω NON. INDUCTIVE OSCILLOSCOPE (NOTE 1) NOTES:1.Rise Time=7ns max. Input Impedance=1megohm.22pF. 2.Rise Time=10ns max. Source Impedance=50 ohms. -1.0A SET TIME BASE FOR 50/100ns/cm 1cm AMBIENT TEMPER ATURE, (ºC) FIG. 3 – TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT, (A) 10 TJ =25ºC 1.0 Pulse Width=300µs 1% Duty Cycle 0 .4 .6 .8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE,(V) FIG. 4 – MAXINUM NON-REPETITIVE FOWARD SURGE CURRENT 50 8.3ms Single Half Sine-Wave (JEDEC Method) JUNCTION CAPACITANCE,(pF) FIG. 5 – TYPICAL JUNCTION CAPACITANCE 200 100 60 40 20 10 6 4 2 1 TJ =25ºC PEAK FORWARD SURGE CURRENT,(A) 40 30 20 10 0 1 5 10 50 100 .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE,(V) NUMBER OF CYCLES AT 60Hz 49A–2/2