FFMAF107

FFMAF101 thru FFMAF107T Surface Mount Glass Passivated Junction Fast Recovery Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * High temperature metallurgically bonded construction * Cavity-free glass passivated junction * Capable of meeting environmental standards of MIL-S-19500 * Typical IR less than 1.0µA * High temperature soldering guaranteed: 260°C/10 seconds Mechanical Data Case: JEDEC SMA-FL, molded plastic over glass DIE We declare that the material of product is Terminals: Plated leads, solderable per Haloggen free (green epoxy compound) MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 28mg Handling precautin:None Electrical Characteristic 1.Maximum & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbol symbol Device marking code FFMAF 101 FFMAF 102 FFMAF 103 FFMAF 104 FFMAF 105 FFMAF 106 FFMAF 107 FFMAF 107P FFMAF 107T FF17 FF17P FF17T Unit FF11 FF12 FF13 FF14 FF15 FF16 Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 1000 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 700 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 1000 1000 V Maximum average forward rectified current lead length at TC = 75°C(Note 2) IF(AV) 1.0 A Peak forward surge current 8.3ms single half sinewave superimposed on rated load (JEDEC Method) IFSM 30 A Maximum reverse recovery time (Note 1) trr Typical thermal resistance (Note 2) RθJA RθJL 150 500 250 Operating junction temperature range TJ 150 35 –55 to +150 storage temperature range TSTG –55 to +150 250 160 ns °C/W °C °C Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbol symbol FFMAF 101 FFMAF 102 FFMAF 103 FFMAF 104 FFMAF 105 FFMAF 106 FFMAF 107 FFMAF 107P FFMAF 107T Unit Maximum instantaneous forward voltage at 1.0A VF 1.3 V Maximum DC reverse current TJ= 25°C at rated DC blocking voltage TJ = 125°C IR 5.0 100 µA Typical junction capacitance at 4.0V, 1MHz (Note 2) CJ 15.0 PF NOTES: 1. IF = 0.5A, IR = 1.0A, IRR = 0.25A 2 2. 8.0mm (.013mm thick) land areas Leshan Radio Company, LTD. Rev.B Dec. 2019 1/3 FFMAF101 thru FFMAF107T 2. Characteristic Curves ( TA = 25°C unless otherwise noted ) Fig. 2 – Maximum Non-repetitive Peak Forward Surge Current Average Forward Rectified Current (A) Average Forward Rectified Current (A) Fig. 1 – Forward Current Derating Curve 60 Hz Resistive or Inductive Load 1.0 0.5 0.375" (9.5mm) Lead Length 0 30 15 0 1 0 25 50 75 100 125 150 175 Case Temperature, °C Fig 3. – Typical Instantaneous Forward Characteristics 1.0 0.1 TJ = 25°C Pulse width = 300µs 1% Duty Cycle 0.01 0.001 0.6 10 Tj=75℃ 0.1 Tj=25℃ 0.01 1.6 Tj=125℃ 1.0 Fig 5. –typical transient thermal impedance 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig 6. – Typical Junction Capacitance 100 100 10 1 0.01 100 100 Junction Capacitance (pF) Transient thermal impedance(°C/W) 1000 0.8 1.0 1.2 1.4 Instantaneous Forward Voltage 10 Number of Cycles at 60Hz Fig 4. – Typical Reverse Characteristics Instantaneous Reverse Current (µA) Instantaneous Forward Current (A) 10 TJ = TJ max 8.3ms Single Half Sine-wave (JEDEC Method) 0.1 1.0 10 t,Pulse duration,sec Leshan Radio Company, LTD. 10 1.0 0.1 100 Rev.B Dec. 2019 TJ = 25°C f = 1.0 MHz Vsig = 50mVp-p 1 10 Reverse Voltage (V) 100 2/3 3.OUTLINE AND DIMENSIONS SMA-FL MIN MAX 4.40 4.80 2.30 2.70 3.30 3.70 DIM Typ. A 4.60 B 2.60 C 3.50 D 0.55 E 0.90 1.20 1.05 F 0.11 0.21 0.17 G 1.30 1.50 1.40 I 0.90 K 0.80 L 0.20 All Dimensions in mm GENERAL NOTES 1.Top package surface finish Ra0.4±0.2um 2.Bottom package surface finish Ra0.7±0.2um 4.SOLDERING FOOTPRINT SMA-FL DIM (mm) X 1.60 Y 1.80 B 3.70 Leshan Radio Company, LTD. Rev.B Dec. 2019 3/3 Title: Power Packages Product Packing Specification 功率产品包装规范 Document Number: APS-QA-QS-009 Proprietary Information Revision C Page 3 of 6 8.1.2 Label position and QA stamp position.(Empty area) 标签张贴位置及QA印章位置。（印章盖在标 签空白区 静电敏感器件标识 7英寸卷盘标签张贴及QA印章位置 13英寸卷盘标签张贴及QA印章位置 8.1.3 Ensure direction In the same reel. The same steel coil plate direction，With antistatic bubble to package reel。Refer to the below picture. 同一箱内的卷盘方向一致,用防静电泡沫对卷盘进行包裹。 7英寸卷盘防静电泡沫包裹 13英寸卷盘防静电泡沫包裹 Do not copy without written permission from Advanced Power Semiconductor Title: Power Packages Product Packing Specification 功率产品包装规范 Document Number: APS-QA-QS-009 Proprietary Information Revision C Page 4 of 6 8.1.4 Put in the antistatic packing box after packaged reels. And QA stamp on the box label . 将包装好的卷盘放入防静电纸箱中，并在盒标签上盖章。 7 英寸卷盘内盒及标签 8.1.5 Product use printing inner box. 13 英寸卷盘内盒及标签 产品使用LRC印字内箱。 印字内盒 印字内盒 7英寸卷盘内箱印字（侧面） 13英寸卷盘内箱印字（正面） 8.1.6 Inner box packing quantity requirement.内盒包装数量要求。 Product Description QTY SOD123-FL 1-10Reels SOD323-HE 1-10Reels SMA-FL 1-7Reels SMB-FL 1-4Reels 8.1.7 With transparent tape sealing. 透明胶带封箱。 Do not copy without written permission from Advanced Power Semiconductor Title: Power Packages Product Packing Specification 功率产品包装规范 Document Number: APS-QA-QS-009 Proprietary Information Revision C Page 5 of 6 7英寸内箱封盒 13英寸内箱封盒 8.1.8 Outer box size and packing quantity requirement,外箱尺寸及包装数量要求。 Product Description 卷盘尺寸 Height（H） Width（W） Length（L） Max. Qty Power Device 7 英寸 410mm 400mm 445mm 12 Power Device 13 英寸 410mm 400mm 445mm 5 统一方向 7 英寸卷盘产品装箱 13 英寸卷盘产品装箱 Do not copy without written permission from Advanced Power Semiconductor Title: Power Packages Marking & Taping Specification 功率封装字模和编带规范 Proprietary Information Document Number:APS-QA-QS-010 Revision C Page 6 of 9 8.2 Standard Products Taping Specification 标准产品编带规范 8.2.1 Tape length of no component 空带长度说明 Taping leader length 引导部分：440mm±40mm ，Tape trailer 尾部：200mm±40mmt 160mm-240mm 400mm-480mm TAPE LEADER 8.2.2 Component packaging orientation: The cathode lead is close to the carrier tape’s index hole. 产品放置方向：印阴极带引脚邻近载带索引孔 Do not copy without written permission from Advanced Power Semiconductor Title: Power Packages Marking & Taping Specification 功率封装字模和编带规范 Proprietary Information Document Number:APS-QA-QS-010 Revision C Page 7 of 9 8.2.3 Tape enwind orientation 编带缠绕方向要求 Do not copy without written permission from Advanced Power Semiconductor