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L1N4148WT3G

L1N4148WT3G

  • 厂商:

    LRC(乐山无线电)

  • 封装:

    SOD123

  • 描述:

    乐山无线电 SOD−123 VF: 715mV I(o): 200mA Pd: 425mW

  • 数据手册
  • 价格&库存
L1N4148WT3G 数据手册
L1N4148WT1G S-L1N4148WT1G SURFACE MOUNT SWITCHING DIODE 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOD123 qualified and PPAP capable. ● Fast switching speed ● Surface mount package ideally suited for automatic insertion ● For general purpose switching applications ● High conductance 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L1N4148WT1G L1N4148WT3G T4 T4 3000/Tape&Reel 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Symbol Limits Unit Non-Repetitive Peak Reverse Voltage VRM 100 V V Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM DC Reverse Voltage 75 VR VR(RMS) 53 V Repetitive Peak Forward Current IFM 500 mA Average Rectified Output Current IO IFSM 200 mA A RMS Reverse Voltage Non-Repetitive Peak Forward Surge Current t=1μs 2 1 t=1s 4. THERMAL CHARACTERISTICS Parameter Power Dissipation (Note 1) Thermal Resistance Junction and Storage temperature Symbol Limits Unit PD 425 mW RΘJA 290 ºC/W RΘJ C 200 ºC/W TJ,Tstg −65∼+150 ºC 1. Valid provided that terminals are kept at ambient temperature. Leshan Radio Company, LTD. Rev.E Jun. 2017 1/4 L1N4148WT1G, S-L1N4148WT1G SURFACE MOUNT SWITCHING DIODE 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Reverse Breakdown Voltage (I(BR)=100μA) Forward Voltage Symbol VBR Min. Typ. Max. 75 - - VF mV (IF = 1.0 mAdc) - - (IF = 10 mAdc) - - 715 855 (IF = 50 mAdc) - (IF = 150 mAdc) - - 1000 1250 Reverse Voltage Leakage Current μA IR (VR = 75Vdc) - 2.5 (VR = 75Vdc,TJ = 150°C) - (VR = 25Vdc,TJ = 150°C) - - (VR = 20Vdc) - - 30 0.025 Diode Capacitance (VR = 0V, f = 1.0 MHz) Reverse Recovery Time (IF=IR=10mAd,Irr=0.1×IR,RL =100Ω ) Leshan Radio Company, LTD. CD trr Rev.E Jun. 2017 Unit V 50 pF - - 2.0 ns - - 4.0 2/4 L1N4148WT1G, S-L1N4148WT1G SURFACE MOUNT SWITCHING DIODE 6.ELECTRICAL CHARACTERISTICS CURVES 100 1000 150℃ 10 100 Reverse Current(uA) IF, Forward Current(mA) 150℃ 85℃ 10 25℃ -55℃ 85℃ 1 0.1 25℃ 0.01 1 -55℃ 0.001 0.1 0 0.5 1 VF, Forward Voltage(V) 1.5 0.0001 0 20 40 60 80 VR Reverse Voltage(V) 100 Reverse Characteristics Forward Characteristics 0.6 f=1MHz C,Capacitor(pF) 0.5 0.4 0.3 0.2 0.1 0 0 10 20 30 40 50 VR, Reverse Voltage(V) Capacitor Characteristics Leshan Radio Company, LTD. Rev.E Jun. 2017 3/4 L1N4148WT1G, S-L1N4148WT1G SURFACE MOUNT SWITCHING DIODE 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.94 NOM MAX MIN NOM MAX 1.17 1.35 0.037 0.046 0.053 A1 0.00 0.05 0.10 0.000 0.002 0.004 b 0.51 0.61 0.71 0.020 0.024 0.028 c --- --- 0.15 --- --- 0.006 D 1.40 1.60 1.80 0.055 0.063 0.071 E HE 2.54 2.69 2.84 0.100 0.106 0.112 3.56 3.68 3.86 0.140 0.145 0.152 L 0.25 --- --- θ 0° --- 10° 0.010 --- --- 0° --- 10° 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.E Jun. 2017 4/4
L1N4148WT3G 价格&库存

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