L2N7002DW1T1G

L2N7002DW1T1G S-L2N7002DW1T1G Small Signal MOSFET 115 mAmps, 60V N–Channel SC-88 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. ● ESD Protected:1000V 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L2N7002DW1T1G 702 3000/Tape&Reel L2N7002DW1T3G 702 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Symbol Limits Unit Drain–Source Voltage VDSS 60 Drain–Gate Voltage (RGS = 1.0 mΩ) VDGR 60 V V Drain Current ID – ContinuousTC = 25°C ±115 TC = 100°C – Pulsed (Note 1) mA ±75 IDM ±800 VGS ±20 V VGSM ±40 V Symbol Limits Unit PD 380 mW Gate–Source Voltage – Continuous – Non–repetitive (tp≤50μs) 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, Per Device 250 FR−5 Board (Note 2) @ TA = 25ºC Derate above 25ºC Thermal Resistance, 3.0 mW/ºC RΘJA 328 ºC/W TJ,Tstg −55∼+150 ºC Junction–to–Ambient(Note 2) Junction and Storage temperature 1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%. 2. FR–5 = 1.0×0.75×0.062 in. Leshan Radio Company, LTD. Rev.B Mar 2016 1/6 L2N7002DW1T1G, S-L2N7002DW1T1G Small Signal MOSFET 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Symbol Drain–Source Breakdown Voltage VBRDSS (VGS = 0, ID = 10μA) Zero Gate Voltage Drain Current TJ = 25°C (VGS = 0, VDS = 60 V) TJ = 125°C Gate–Body Leakage Current, Forward IDSS IGSSF (VGS = 20 V) Gate–Body Leakage Current, Reverse IGSSR (VGS = - 20 V) Min. Typ. Max. 60 - - - - 1.0 - - 500 Unit V μA μA - - 1.0 μA - - -1.0 ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) (VDS = VGS, ID = 250μA) On–State Drain Current ID(on) (VDS ≥ 2.0 VDS(on), VGS = 10 V) Static Drain–Source On–State Voltage V 1.0 - 2.0 mA 500 - V VDS(on) (VGS = 10 V, ID = 500 mA) - - 3.75 (VGS = 5.0 V, ID = 50 mA) - - 0.375 Static Drain–Source On–State Resistance (VGS = 10 V, ID = 500 mA) (VGS = 5.0 V, ID = 50 mA) RDS(on) Ohms TC = 25°C - - 7.5 TC = 125°C - - 13.5 TC = 25°C - - 7.5 TC = 125°C - - 13.5 80 - - Forward Transconductance gfs (VDS≥ 2.0 VDS(on), ID = 200 mA) mmhos DYNAMIC CHARACTERISTICS Input Capacitance Cibo (VDS = 25 V, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Cobo Reverse Transfer Capacitance Cibo (VDS = 25 V, VGS = 0, f = 1.0 MHz) pF - - 50 pF - - 25 pF - - 5.0 SWITCHING CHARACTERISTICS ns Turn-On Delay Time (VDD = 25 V , ID =500 mA, RG = 25Ω,RL = 50 Ω,Vgen = 10 V) Turn-Off Delay Time td(on) - - 20 td(off) - - 40 BODY–DRAIN DIODE RATINGS Diode Forward On–Voltage VSD (IS = 115 mA, VGS = 0 V) Source Current Continuous (Body Diode) Source Current Pulsed V - - -1.5 IS - - -115 ISM - - -800 mA mA 3.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. Leshan Radio Company, LTD. Rev.B Mar 2016 2/6 L2N7002DW1T1G, S-L2N7002DW1T1G Small Signal MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES 1.6 1.2 1.2 ID, Drain Current(A) ID,Drain Current(A) 1 VGS=4.5V VGS=5V VGS=6V 0.8 VGS=7,8,9,10V VGS=4V 150℃ 25℃ 0.8 0.6 -55℃ 0.4 VGS=3.5V 0.4 VGS=3V 0.2 VGS=2.5V 0 0 0 1 2 3 4 5 VDS, Drain-to-Source Voltage(V) 6 0 ON-Region Characteristics 10 Transfer Characteristcs 8 8 VGS=10V VGS=5V 7 RDS(on), ON-Resistance(Ω) 7 RDS(on), ON-Resistance(Ω) 2 4 6 8 VGS, Gate-to-Source Voltage(V) 6 150℃ 5 85℃ 4 25℃ 3 -55℃ 2 6 5 150℃ 4 85℃ 3 25℃ 2 1 -55℃ 1 0 0 0 0.05 0.1 0.15 ID, Drain Current(A) 0.2 RDS(on) vs. ID Leshan Radio Company, LTD. 0 0.05 0.1 0.15 ID, Drain Current(A) 0.2 RDS(on) vs. ID Rev.B Mar 2016 3/6 L2N7002DW1T1G, S-L2N7002DW1T1G Small Signal MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES（Con.) 10 RDS(on), ON_Region reisistance(normallized) 2.5 RDS(on), ON-Resistance(Ω） 9 8 7 6 5 ID=500mA 4 ID=200mA 3 2 1 0 2 VGS=10V 1.5 VGS=5V 1 0.5 0 2 4 6 8 VGS, Gate-to-Source Voltage(V) 10 -50 0 50 100 Temperataure(℃) 150 RDS(on) vs. Temperature RDS(on) vs. VGS 35 10 VGS=0V VGS=0V 30 IS, Source Current(A) C,Capacitor(Pf) 25 Ciss 20 15 Coss 10 5 1 85℃ 25℃ 0.1 Crss 0 0.01 0 5 10 15 20 25 VDS, Drain-to-Source Voltage(V) 30 0.4 Capacitor vs.VDS Leshan Radio Company, LTD. 0.5 0.6 0.7 0.8 0.9 VSD, Source-to-Drain Voltage(V) 1 IS vs.VSD Rev.B Mar 2016 4/6 L2N7002DW1T1G, S-L2N7002DW1T1G Small Signal MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES（Con.) 1.4 1.0E-06 VGS=0V 1.2 150℃ 1.0E-07 1 IDS,Idss Leakage(A) VGS(th), Threshold Voltage(normallized) ID=250uA 0.8 0.6 0.4 125℃ 1.0E-08 85℃ 25℃ 1.0E-09 0.2 1.0E-10 0 -50 0 50 100 Temperature(℃） 150 VGS(th) vs. Temperature Leshan Radio Company, LTD. 0 10 20 30 40 50 VDS, Drain-to-Source Voltage(V) 60 IDS vs. VDS Rev.B Mar 2016 5/6 L2N7002DW1T1G, S-L2N7002DW1T1G Small Signal MOSFET 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM A MIN NOM MAX MIN NOM MAX --- --- 1.10 --- --- 0.043 A1 0.00 --- 0.10 0 --- 0.004 A2 0.70 0.90 1.00 0.027 0.035 0.039 b 0.15 0.20 0.25 0.006 0.008 C 0.08 0.15 0.22 0.003 0.006 0.009 D 1.80 2.00 2.20 0.07 E 2.00 2.10 2.20 0.078 0.082 0.086 E1 1.15 1.25 1.35 0.045 0.049 0.053 0.46 0.010 0.014 0.018 e L 0.65 BSC 0.26 0.36 0.01 0.078 0.086 0.026 BSC L2 0.15 BSC 0.006 BSC aaa 0.15 0.01 bbb 0.30 0.01 ccc 0.10 0.00 ddd 0.10 0.00 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.B Mar 2016 6/6