L2N7002FLT1G

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 30 Volts L2N7002FLT1G N–Channel SOT–23 • 3 We declare that the material of product are Halogen Free and compliance with RoHS requirements. 1 2 FEATURES CASE 318, STYLE 21 SOT– 23 (TO–236AB) ● RDS(ON) ≦8Ω@VGS=4V ● RDS(ON) ≦13Ω@VGS=2.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current Simplified Schematic capability ● Capable doing Cu wire bonding Gate ● ESD Protected:1000V 1 APPLICATIONS 3 ● Power Management in Note book ● Portable Equipment Source ● Battery Powered System Drain 2 ● Load Switch (Top View) THERMAL CHARACTERISTICS Symbol Max Unit PD 225 1.8 mW mW/°C Thermal Resistance, Junction to Ambient RθJA 556 °C/W Total Device Dissipation Alumina Substrate,(Note 2.) TA = 25°C Derate above 25°C PD 300 mW mW/°C Thermal Resistance, Junction to Ambient RθJA 417 °C/W TJ, Tstg -55 to +150 °C Junction and Storage Temperature 2.4 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. ORDERING INFORMATION Device Marking L2N7002FLT1G 72F L2N7002FLT3G 72F MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 72F 1 Gate 72F M M Characteristic Total Device Dissipation FR–5 Board (Note 1.) TA = 25°C Derate above 25°C 2 Source = Device Code =Month Code Shipping 3000 Tape & Reel 10000 Tape & Reel Rev .O 1/4 LESHAN RADIO COMPANY, LTD. L2N7002FLT1G Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Symbol Maximum Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Parameter Electrical Characteristics (Tj =25℃ Unless Otherwise Specified) Symbol Parameter Limit Min BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 30 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 0.8 IGSS Gate-Body Leakage IDSS Zero Gate Voltage Drain Current RDS(ON) Drain-Source On-Resistance* VSD Diode Forward Voltage * Typ Max Unit STATIC V 1.5 V VDS=0V, VGS=±20V ±10 μA VDS=30V, VGS=0V 1 μA VGS=4V, ID=10mA 5 8 VGS=2.5V, ID=1mA 7 13 IS=200mA, VGS=0V 1.2 Ω V DYNAMIC Qg Total Gate Charge 4.9 Qgs Gate-Source Charge Qgd Gate-Drain Charge 0.6 Ciss Input Capacitance 21 Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-On Delay Time tr Turn-On Rise Time VDD=5V, RL =500Ω 7.3 td(off) Turn-Off Delay Time VGES=5V,RG=10Ω 31.3 tf Turn-Off Fall Time VDS=25V, VGS=10V, ID=0.22A VDS=25V, VGS=0V, f=1MHz nC 2.1 pF 10 2 10.1 ns 28.2 Notes: * . Pulse test; pulse width ≦ 300us, duty cycle≦ 2%. Rev .O 2/4 LESHAN RADIO COMPANY, LTD. L2N7002FLT1G Typical Characteristics (TJ =25℃ Noted) Rev .O 3/4 LESHAN RADIO COMPANY, LTD. L2N7002FLT1G Typical Characteristics (TJ =25℃ Noted) Rev .O 4/5 LESHAN RADIO COMPANY, LTD. L2N7002FLT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 DIM B S G C D H K J MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 A B C D G H J K L S V INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev .O 5/5