L2N7002LT1G

L2N7002LT1G S-L2N7002LT1G Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT-23 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23(TO-236) qualified and PPAP capable. ● ESD Protected:1000V 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L2N7002LT1G 702 3000/Tape&Reel L2N7002LT3G 702 10000/Tape&Reel 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter Symbol Limits Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 60 Vdc Drain Current ID – Continuous TC = 25°C ±115 ±75 TC = 100°C – Pulsed (Note 1) mAdc IDM ±800 VGS ±20 Vdc VGSM ±40 Vdc Symbol Limits Unit PD 225 mW 1.8 mW/ºC RΘJA 556 ºC/W TJ,Tstg −55∼+150 ºC Gate–Source Voltage – Continuous – Non–repetitive (tp≤50μs) 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, FR−5 Board (Note 2) @ TA = 25ºC Derate above 25ºC Thermal Resistance, Junction–to–Ambient(Note 2) Junction and Storage temperature 1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%. 2. FR–5 = 1.0×0.75×0.062 in. Leshan Radio Company, LTD. Rev.B Mar 2016 1/6 L2N7002LT1G, S-L2N7002LT1G Small Signal MOSFET 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) OFF CHARACTERISTICS Characteristic Symbol Drain–Source Breakdown Voltage VBRDSS (VGS = 0, ID = 10μAdc) Zero Gate Voltage Drain Current TJ = 25°C (VGS = 0, VDS = 60 Vdc) IDSS TJ = 125°C Gate–Body Leakage Current, Forward IGSSF (VGS = 20 Vdc) Gate–Body Leakage Current, Reverse IGSSR (VGS = - 20 Vdc) Min. Typ. Max. 60 - - - - 1.0 - - 500 Unit Vdc μAdc μAdc - - 1.0 μAdc - - -1.0 ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) (VDS = VGS, ID = 250μAdc) On–State Drain Current ID(on) (VDS ≥ 2.0 VDS(on), VGS = 10 Vdc) Static Drain–Source On–State Voltage Vdc 1.0 1.6 2.0 mA 500 - Vdc VDS(on) (VGS = 10 Vdc, ID = 500 mAdc) - - 3.75 (VGS = 5.0 Vdc, ID = 50 mAdc) - - 0.375 Static Drain–Source On–State Resistance RDS(on) (VGS = 10 Vdc, ID = 500 mAdc) TC = 25°C (VGS = 5.0 Vdc, ID = 50 mAdc) Ohms - 1.4 7.5 TC = 125°C - - 13.5 TC = 25°C - 1.8 7.5 TC = 125°C - - 13.5 80 - - Forward Transconductance gfs (VDS≥ 2.0 VDS(on), ID = 200 mAdc) mmhos DYNAMIC CHARACTERISTICS Input Capacitance Cibo (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance Cobo (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance Cibo (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) pF - 17 50 pF - 10 25 pF - 2.5 5.0 SWITCHING CHARACTERISTICS ns Turn-On Delay Time (VDD = 25 Vdc , ID =500 mAdc, RG = 25Ω,RL = 50 Ω,Vgen = 10 V) Turn-Off Delay Time td(on) - 7 20 td(off) - 11 40 BODY–DRAIN DIODE RATINGS Diode Forward On–Voltage VSD (IS = 115 mAdc, VGS = 0 V) Source Current Continuous (Body Diode) Source Current Pulsed Vdc - - -1.5 IS - - -115 mAdc ISM - - -800 mAdc 3.Pulse Test: Pulse Width ≤300 μs, Duty Cycle ≤2.0%. Leshan Radio Company, LTD. Rev.B Mar 2016 2/6 L2N7002LT1G, S-L2N7002LT1G Small Signal MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES 1.6 1.2 1 ID, Drain Current(A) ID,Drain Current(A) 1.2 VGS=4.5V VGS=5V VGS=6V 0.8 VGS=7,8,9,10V VGS=4V 150℃ 25℃ 0.8 0.6 -55℃ 0.4 VGS=3.5V 0.4 VGS=3V 0.2 VGS=2.5V 0 0 0 1 2 3 4 5 VDS, Drain-to-Source Voltage(V) 6 0 ON-Region Characteristics 10 Transfer Characteristcs 8 8 VGS=10V VGS=5V 7 RDS(on), ON-Resistance(Ω) 7 RDS(on), ON-Resistance(Ω) 2 4 6 8 VGS, Gate-to-Source Voltage(V) 6 150℃ 5 85℃ 4 25℃ 3 -55℃ 2 6 5 150℃ 4 85℃ 3 25℃ 2 1 -55℃ 1 0 0 0 0.05 0.1 0.15 ID, Drain Current(A) 0.2 RDS(on) vs. ID Leshan Radio Company, LTD. 0 0.05 0.1 0.15 ID, Drain Current(A) 0.2 RDS(on) vs. ID Rev.B Mar 2016 3/6 L2N7002LT1G, S-L2N7002LT1G Small Signal MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES（Con.) 10 RDS(on), ON_Region reisistance(normallized) 2.5 RDS(on), ON-Resistance(Ω） 9 8 7 6 5 ID=500mA 4 ID=200mA 3 2 1 0 2 VGS=10V 1.5 VGS=5V 1 0.5 0 2 4 6 8 VGS, Gate-to-Source Voltage(V) 10 -50 0 50 100 Temperataure(℃) 150 RDS(on) vs. Temperature RDS(on) vs. VGS 35 10 VGS=0V VGS=0V 30 IS, Source Current(A) C,Capacitor(Pf) 25 Ciss 20 15 Coss 10 5 1 85℃ 25℃ 0.1 Crss 0 0.01 0 5 10 15 20 25 VDS, Drain-to-Source Voltage(V) 30 0.4 Capacitor vs.VDS Leshan Radio Company, LTD. 0.5 0.6 0.7 0.8 0.9 VSD, Source-to-Drain Voltage(V) 1 IS vs.VSD Rev.B Mar 2016 4/6 L2N7002LT1G, S-L2N7002LT1G Small Signal MOSFET 6.ELECTRICAL CHARACTERISTICS CURVES（Con.) 1.4 1.0E-06 VGS=0 1.2 150℃ 1.0E-07 1 IDS,Idss Leakage(A) VGS(th), Threshold Voltage(normallized) ID=250uA 0.8 0.6 0.4 125℃ 1.0E-08 85℃ 25℃ 1.0E-09 0.2 1.0E-10 0 -50 0 50 100 Temperature(℃） 150 VGS(th) vs. Temperature Leshan Radio Company, LTD. 0 10 20 30 40 50 VDS, Drain-to-Source Voltage(V) 60 IDS vs. VDS Rev.B Mar 2016 5/6 L2N7002LT1G, S-L2N7002LT1G Small Signal MOSFET 7.OUTLINE AND DIMENSIONS Notes: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MILLIMETERS INCHES DIM MIN A 0.89 NOM MAX MIN NOM MAX 0.04 0.044 1 1.11 0.035 A1 0.01 0.06 0.1 0.001 0.002 0.004 b 0.37 0.44 0.5 0.015 0.018 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.9 3.04 0.11 E 1.20 1.3 1.4 0.047 0.051 0.055 e 1.78 1.9 2.04 0.07 L 0.10 0.2 0.3 0.004 0.008 0.012 L1 HE 0.35 0.54 0.69 0.014 0.021 0.029 2.10 2.4 2.64 0.083 0.094 0.104 0° --- 10° θ 0° 0.114 0.02 0.12 0.075 0.081 --- 10° 8.SOLDERING FOOTPRINT Leshan Radio Company, LTD. Rev.B Mar 2016 6/6