L2SA1576ART1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L2SA1576AQT1G Series S-L2SA1576AQT1G Series ORDERING INFORMATION 3 Device L2SA1576AQLT1G Series S-L2SA1576AQLT1G Series L2SA1576AQLT3G Series S-L2SA1576AQLT3G Series Shipping Package SC-70 3000/Tape & Reel SC-70 10000/Tape & Reel 1 2 SC-70/SOT– 323 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO –50 V Collector–Base Voltage V CBO –60 V Emitter–Base Voltage V –6.0 V EBO 3 COLLECTOR 1 BASE Collector Current — Continuous IC –150 mAdc Collector power dissipation PC 0.15 W Junction temperature Tj 150 °C Storage temperature T stg -55 ~+150 °C 2 EMITTER DEVICE MARKING L2SA1576AQT1G =FQ L2SA1576ART1G=FR L2SA1576AST1G =FS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Collector–Emitter Breakdown Voltage (IC = –1 mA) Emitter–Base Breakdown Voltage (IE = – 50 µA) Collector–Base Breakdown Voltage (IC = – 50 µA) Collector Cutoff Current (VCB = – 60 V) Emitter cutoff current (VEB = – 6 V) Collector-emitter saturation voltage (IC/ IB = – 50 mA / – 5m A) DC current transfer ratio (V CE = – 6 V, I C= –1mA) Transition frequency (V CE = – 12 V, I E= 2mA, f=30MHz ) Output capacitance (V CB = – 12 V, I E= 0A, f =1MHz ) Symbol Min Typ Max Unit V – 50 — — V V (BR)EBO –6 — — V V – 60 — — V I CBO — — – 0.1 µA I EBO — — – 0.1 µA V CE(sat) — — -0.5 V h FE 120 –– 560 –– fT — 140 –– MHz C ob — 4.0 5.0 pF (BR)CEO (BR)CBO h FE values are classified as follows: * hFE Q 120~270 R 180~390 S 270~560 Rev.O 1/4 LESHAN RADIO COMPANY, LTD. L2SA1576AQT1G Series S-L2SA1576AQT1G Series Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics( ) –50 I C, COLLECTOR CURRENT (mA) I C, COLLECTOR CURRENT (mA) –20 –35.0 –10 VCE= –10 V T A = 100°C 25°C – 40°C –10 –50 –2 –1 –0.5 T A = 25°C –28.0 –8 –24.5 –21.0 –6 –17.5 –14.0 –4 –10.5 –7.0 –2 –3.5µA –0.2 –0.1 I B =0 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 0 –1.6 –0.4 –0.8 –1.2 –1.6 –2.0 V CE , COLLECTOR TO EMITTER VOLTAGE (V) V BE , BASE TO EMITTER VOLTAGE(V) Fig.3 Grounded emitter output characteristics( ) Fig.4 DC current gain vs. collector current ( ) –100 500 T A = 25°C –80 –60 VCE= –5 V –3V –1V T A = 25°C 500 450 400 350 300 h FE, DC CURRENT GAIN I C, COLLECTOR CURRENT (mA) –31.5 –250 –200 –150 –40 –100 –20 –50 µA 200 100 50 I B =0 0 0 –1 –2 –3 –4 –5 –0.2 V CE , COLLECTOR TO EMITTER VOLTAGE (V) –0.5 –1 –2 –5 –10 –20 –50 –100 I C, COLLECTOR CURRENT (mA) Fig.6 Collector-emitter saturation voltage vs. Fig.5 DC current gain vs. collector current ( ) 500 V CE(sat), COLLECTOR SATURATION VOLTAGE(V) collector current ( ) T A = 100°C h FE, DC CURRENT GAIN 25°C –40°C 200 100 50 VCE= – 6V –0.2 –0.5 –1 –2 –5 –10 –20 I C, COLLECTOR CURRENT (mA) –50 –100 –1 T A = 25°C –0.5 –0.2 I C /I B = 50 20 –0.1 10 –0.05 –0.2 –0.5 –1 –2 –5 –10 –20 –50 –100 I C, COLLECTOR CURRENT (mA) Rev.O 2/4 LESHAN RADIO COMPANY, LTD. L2SA1576AQT1G Series S-L2SA1576AQT1G Series Fig.8 Gain bandwidth product vs. emitter current 1000 –1 T A = 25°C V CE = –12V f r , TRANSITION FREQUENCY(MHz) I C /I B = 10 –0.5 –0.2 T A = 100°C 25°C –40°C –0.1 –0.05 –0.2 –0.5 –1 –2 –5 –10 –20 –50 500 200 100 50 –100 –0.2 –0.5 –1 –2 –5 –10 –20 –50 –100 I E, EMITTER CURRENT (mA) I C, COLLECTOR CURRENT (mA) Fig.9 Collector output capacitance vs.collector-base voltage Emitter inputcapacitance vs. emitter-base voltage C ob , COLLECTOR OUTPUT CAPACITANCE( pF) C ib , EMITTER INPUT CAPACITANCE (pF) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) 20 T A = 25°C f =1MHz I E = 0A I C = 0A C ib 10 C ob 5 2 –0.5 –1 –2 –5 –10 –20 V CB, COLLECTOR TO BASE VOLTAGE (V) V EB, EMITTER TO BASE VOLTAGE (V) Rev.O 3/4 LESHAN RADIO COMPANY, LTD. L2SA1576AQT1G Series S-L2SA1576AQT1G Series SC-70/SOT-323 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 3 E HE 1 2 b e A 0.05 (0.002) c A2 DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 SOLDERING FOOTPRINT* 0.65 0.025 0.016 0.010 0.087 0.053 0.055 0.095 1 XX M
1.9 0.075 = Specific Device Code = Date Code = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “
”, may or may not be present. 0.9 0.035 SCALE 10:1 0.079 MAX 0.040 0.004 XXM 0.65 0.025 0.7 0.028 0.012 0.004 0.071 0.045 0.047 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 GENERIC MARKING DIAGRAM L A1 MIN 0.032 0.000 mm 
inches Rev.O 4/4