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L2SA1774XT1G

L2SA1774XT1G

  • 厂商:

    LRC(乐山无线电)

  • 封装:

  • 描述:

    L2SA1774XT1G - General Purpose Transistors - Leshan Radio Company

  • 数据手册
  • 价格&库存
L2SA1774XT1G 数据手册
LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device L2SA1774XT1G L2SA1774XT3G Marking FX FX Shipping 3000/Tape & Reel 10000/Tape & Reel 1 2 L2SA1774XT1G 3 SC-89 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Limits −60 −50 −6 −0.15 Unit V V V A (DC) 1 BASE 2 EMITTER COLLECTOR 3 PC 0.15 W Tj Tstg 150 −55~+150 ˚C ˚C !Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −60 −50 −6 − − − 120 − − Typ. − − − − − − − 140 4.0 Max. − − − −0.1 −0.1 −0.5 560 − 5.0 Unit V V V µA µA V − MHz pF IC=−50µA IC=−1µA IE=−50µA VCB=−60V VEB=−6V IC/IB=−50mA/−5mA VCE=−6V, IC=−1mA VCE=−12V, IE=2mA, f=30MHz VCB=−12V, IE=0A, f=1MHz Conditions !Device marking L2SA1774QT1G=FQ L2SA1774ST1G=FS L2SA1774RT1G=FR ! hFE values are classified as follows: Item hFE Q 120~270 R 180~390 S 270~560 1/3 LESHAN RADIO COMPANY, LTD. L2SA1774XT1G !Electrical characteristic curves −50 COLLECTOR CURRENT : Ic (mA) COLLECTOR CURRENT : IC (mA) −20 −10 −5 −2 −1 −0.5 −0.2 −0.1 COLLECTOR CURRENT : I C (mA) Ta=100˚C 25˚C −40˚C VCE=−6V −10 −35.0 Ta=25˚C −100 −31.5 −28.0 −24.5 Ta=25˚C −500 −450 −400 −350 −300 −8 −80 −6 −21.0 −17.5 −60 −250 −200 −4 −14.0 −10.5 −40 −150 −100 −2 −7.0 −3.5µA −20 −50µA −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 0 −0.4 −0.8 −1.2 IB=0 −1.6 −2.0 IB =0 0 −1 −2 −3 −4 −5 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO MITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics (I) Fig.3 Grounded emitter output characteristics (II) Ta=25˚C VCE=−5V −3V −1V DC CURRENT GAIN : hFE 200 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 500 500 Ta=100˚C 25˚C −40˚C −1 Ta=25˚C DC CURRENT GAIN : hFE −0.5 200 100 −0.2 IC/IB=50 −0.1 20 10 100 50 50 VCE=−6V −5 −10 −20 −50 −100 −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 −0.2 −0.5 −1 −2 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current (I) Fig.5 DC current gain vs. collector current (II) Fig.6 Collector-emitter saturation voltage vs. collector current (I) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) lC/lB=10 −0.5 TRANSITION FREQUENCY : fT (MHz) Ta=25˚C VCE=−12V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) −1 1000 20 Cib 10 500 Ta=25˚C f=1MHz IE =0A IC =0A Co b −0.2 Ta=100˚C 25˚C −40˚C 200 5 −0.1 100 2 −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100 50 0.5 1 2 5 10 20 50 100 −0.5 −1 −2 −5 −10 −20 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector-emitter saturation voltage vs. collector current (II) Fig.8 Gain bandwidth product vs. emitter current Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage 2/3 LESHAN RADIO COMPANY, LTD. L2SA1774XT1G SC-89 A -X- 3 1 2 B -Y- S K G 2 PL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C-01 OBSOLETE, NEW STANDARD 463C-02. MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF −−− −−− 10 _ −−− −−− 10 _ 1.50 1.60 1.70 INCHES NOM 0.063 0.034 0.028 0.011 0.020 BSC 0.021 REF 0.006 0.016 0.043 REF −−− −−− 0.063 D 0.08 (0.003) M 3 PL XY M C N J -TSEATING PLANE DIM A B C D G H J K L M N S MIN 0.059 0.030 0.024 0.009 0.004 0.012 −−− −−− 0.059 MAX 0.067 0.040 0.031 0.013 0.008 0.020 10 _ 10 _ 0.067 H H L G RECOMMENDED PATTERN OF SOLDER PADS 3/3
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