L2SA2030M3T5G

LESHAN RADIO COMPANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Applications For switching, for muting. PNP Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE (sat) ≤ 250mA At IC = −200mA / IB = −10mA 3) We declare that the material of product compliance with RoHS requirements. 1 2 L2SA2030M3T5G 3 S OT –723 Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits −15 −12 −6 −500 −1 150 150 −55 to +150 Unit V V V mA A mW °C °C 3 COLLECTOR 1 ∗ BASE Collector power dissipation Junction temperature Storage temperature ∗Single pulse, Pw=1ms 2 EMITTER Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. − Collector-base breakdown voltage BVCBO −15 Collector-emitter breakdown voltage BVCEO −12 − − −6 Emitter-base breakdown voltage BVEBO − − Collector cutoff current ICBO IEBO Emitter cutoff current − − DC current transfer ratio hFE 270 − − −100 Collector-emitter saturation voltage VCE (sat) fT Transition frequency − 260 Output capacitance Cob − 6.5 Max. Unit Conditions − V IC= −10µA − V IC= −1mA V IE= −10µA − −100 nA VCB= −15V −100 nA VEB= −6V VCE= −2V / IC= −10mA 680 − −250 mV IC= −200mA / IB= −10mA − MHz VCE= −2V, IE=10mA, fT=100MHz − pF VCB= −10V, IE=0A, f=1MHz Device marking and ordering information Device Marking Shipping 4000/Tape&Reel L2SA2030M3T5G BW 1/3 LESHAN RADIO COMPANY, LTD. L2SA2030M3T5G Electrical characteristic curves 1000 COLLECTOR CURRENT : IC (mA) 500 200 100 50 20 10 5 2 1 0 0.5 1.0 Ta=125°C Ta=25°C Ta= −40°C VCE=2V 1000 500 VCE=2V 1000 500 IC / IB=20 COLLECTOR SATURATION VOLTAGE : V CE (sat) (V) DC CURRENT GAIN : hFE 200 100 50 20 10 5 2 Ta=125°C Ta=25°C Ta= −40°C 200 100 50 20 10 5 2 Ta=125°C Ta=25°C Ta= −40°C 1.5 1 1 2 5 10 20 50 100 200 500 1000 1 1 2 5 10 20 50 100 200 500 1000 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded Emitter Propagation Characteristics Fig.2 DC Current Gain vs. Collector Current BASER SATURATION VOLTAGE : VBE (sat) (mV) 10000 5000 2000 1000 500 200 100 50 20 10 1 2 5 10 20 50 100 200 500 1000 Ta= −40°C Ta=25°C Ta=125°C Fig.3 Collector-Emitter Saturation Voltage vs. Collector Current (Ι) 1000 1000 500 TRANSITION FREQUENCY : fT (MHz) Ta=25°C IC / IB=20 500 200 100 50 20 10 5 2 1 1 2 5 10 20 VCE=2V Ta=25°C COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV) 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 IC / IB=50 IC / IB=20 IC / IB=10 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IC (mA) Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current (ΙΙ) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 Cob Cib Fig.5 Base-Emitter Saturation Voltage vs.Collecter Current Fig.6 Gain Bandwidth Product vs. Emitter Current IE=0A f=1MHz Ta=25°C EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector Output Capacitance vs. Collector-Base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage 2/3 LESHAN RADIO COMPANY, LTD. L2SA2030M3T5G SOT−723 −X− D b1 −Y− 3 A E 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. L C HE e b 2X 0.08 (0.0032) X Y DIM A b b1 C D E e HE L MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 GENERIC MARKING DIAGRAM* STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 2: PIN 1. ANODE 2. N/C 3. CATHODE STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE XX M 1 SOLDERING FOOTPRINT FOR SOT−723 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 XX M = Specific Device Code = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. 0.40 0.0157 0.40 0.0157 SCALE 20:1 mm inches 3/3