0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
L2SC1623QLT1G

L2SC1623QLT1G

  • 厂商:

    LRC(乐山无线电)

  • 封装:

    SOT-23

  • 描述:

    NPN 集射极击穿电压(Vceo):50V 集电极电流(Ic):150mA 功率(Pd):225mW 集电极-发射极饱和电压(VCE(sat)@Ic,Ib):150mV@100mA,10mA 特征频率...

  • 数据手册
  • 价格&库存
L2SC1623QLT1G 数据手册
LESHAN RADIO COMPANY, LTD. General Purpose Transistors Pb-Free package is available S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L2SC1623QLT1G Series S-L2SC1623QLT1G Series DEVICE MARKING AND ORDERING INFORMATION Device 3 Marking Shipping L5 3000/Tape&Reel L5 10000/Tape&Reel L6 3000/Tape&Reel L6 10000/Tape&Reel L7 3000/Tape&Reel L7 10000/Tape&Reel L2SC1623QLT1G S-L2SC1623QLT1G L2SC1623QLT3G S-L2SC1623QLT3G L2SC1623RLT1G S-L2SC1623RLT1G L2SC1623RLT3G S-L2SC1623RLT3G L2SC1623SLT1G S-L2SC1623SLT1G L2SC1623SLT3G S-L2SC1623SLT3G 1 2 SOT– 23 3 COLLECTOR 1 MAXIMUM RATINGS BASE Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 7 V IC 150 mAdc Symbol Max Unit 225 mW 1.8 mW/oC Rating Collector current-continuoun 2 EMITTER THERMAL CHARATEERISTICS Characteristic Total Device Dissipation FR-5 Board, (1) PD o TA=25 C o Derate above 25 C Thermal Resistance, Junction to Ambient R θJA Total Device Dissipation PD 556 o Alumina Substrate, (2) TA=25 C o Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage Temperature R θJA Tj ,Tstg o C/W 300 mW 2.4 mW/oC 417 -55 to +150 o C/W o C DEVICE MARKING L2SC1623QLT1G=L5 L2SC1623RLT1G=L6 L2SC1623SLT1G=L7 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) Characteristic Symbol Min Typ Max Unit - - 0.1 0.1 µA µA OFF CHARACTERISTICS Collector Cutoff Current (VCB=60V) Emitter Cutoff Current (VBE=5V) I I CBO EBO Rev.O 1/5 LESHAN RADIO COMPANY, LTD. L2SC1623QLT1G Series S-L2SC1623QLT1G Series ON CHARACTERISTICS DC Current Gain (IC=1.0mA, VCE=6V) Collector-Emitter Saturation Voltage (IC=100mA,IB=10mA) Base-Emitter Saturation Voltage (IC=100mA,IB=10mA) hFE Base -Emitter On Voltage IC=1mA,VCE=6.0V) 120 - 560 V CE(sat) - 0.15 0.3 V VBE(sat) - 0.86 1.0 V 0.55 0.62 0.65 V V BE SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (VCE=6.0V,IE =-10mA) Output Capacitance(VCE = 6V, IE=0, f=1.0MHz) Ft - 250 - MHz Cob - 3 - Pf hFE Values are classified as followes NOTE: * hFE Q 120~270 R 180~390 S 270~560 Rev.O 2/5 LESHAN RADIO COMPANY, LTD. L2SC1623QLT1G Series S-L2SC1623QLT1G Series Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics( ) 50 I C, COLLECTOR CURRENT (mA) 10 1 25°C – 55°C 50 T A = 100° C I C, COLLECTOR CURRENT (mA) 20 2 0.50mA 100 VCE= 6 V 0.5 T A = 25°C 80 60 40 20 0.2 0.1 0 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 0 –1.6 0.4 V BE , BASE TO EMITTER VOLTAGE(V) Fig.3 Grounded emitter output characteristics( ) 1.2 1.6 2.0 Fig.4 DC current gain vs. collector current ( ) 10 I C, COLLECTOR CURRENT (mA) 0.8 V CE , COLLECTOR TO EMITTER VOLTAGE (V) 500 h FE, DC CURRENT GAIN 8 6 4 2 200 100 50 20 0 0 4 8 12 16 10 20 0.2 0.5 V CE , COLLECTOR TO EMITTER VOLTAGE (V) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) h FE, DC CURRENT GAIN 200 100 50 20 10 0.2 0.5 1 2 5 10 20 50 I C, COLLECTOR CURRENT (mA) 100 200 2 5 10 20 50 100 200 Fig.6 Collector-emitter saturation voltage vs. collector current Fig.5 DC current gain vs. collector current ( ) 500 1 I C, COLLECTOR CURRENT (mA) 0.5 0.2 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 I C, COLLECTOR CURRENT (mA) Rev.O 3/5 LESHAN RADIO COMPANY, LTD. L2SC1623QLT1G Series S-L2SC1623QLT1G Series Fig.8 Collector-emitter saturation voltage vs. collector current ( ) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) 0.5 0.2 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 0.5 0.2 0.1 0.05 0.02 0.01 0.2 0.5 I C, COLLECTOR CURRENT (mA) 100 50 –5 –10 –20 –50 –100 I E, EMITTER CURRENT (mA) C ob , COLLECTOR OUTPUT CAPACITANCE( pF) C ib , EMITTER INPUT CAPACITANCE (pF) f r , TRANSITION FREQUENCY(MHz) 200 –2 5 10 20 50 100 Fig.10 Collector output capacitance vs.collector-base voltage Emitter inputcapacitance vs. emitter-base voltage 500 –1 2 I C, COLLECTOR CURRENT (mA) Fig.9 Gain bandwidth product vs. emitter current –0.5 1 20 10 5 2 1 0.2 0.5 1 2 5 10 20 50 V CB, COLLECTOR TO BASE VOLTAGE (V) V EB, EMITTER TO BASE VOLTAGE (V) C c-r bb, BASE COLLECTOR TIME CONSTANT( ps) Fig.11 Base-collector time constant vs.emitter current 200 100 50 20 10 –0.2 –0.5 –1 –2 –5 –10 I E, EMITTER CURRENT (mA) Rev.O 4/5 LESHAN RADIO COMPANY, LTD. L2SC1623QLT1G Series S-L2SC1623QLT1G Series SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 5/5
L2SC1623QLT1G 价格&库存

很抱歉,暂时无法提供与“L2SC1623QLT1G”相匹配的价格&库存,您可以联系我们找货

免费人工找货
L2SC1623QLT1G
  •  国内价格
  • 20+0.10210
  • 100+0.08820
  • 300+0.07430
  • 800+0.05570
  • 3000+0.04640

库存:53337