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L2SC1623RLT1G

L2SC1623RLT1G

  • 厂商:

    LRC(乐山无线电)

  • 封装:

    SOT-23

  • 描述:

    通用晶体管 100nA 50V 225mW 150mA 250MHz 150mV@100mA,10mA NPN -55℃~+150℃@(Tj) SOT-23

  • 数据手册
  • 价格&库存
L2SC1623RLT1G 数据手册
LESHAN RADIO COMPANY, LTD. General Purpose Transistors Pb-Free package is available S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L2SC1623QLT1G Series S-L2SC1623QLT1G Series DEVICE MARKING AND ORDERING INFORMATION Device 3 Marking Shipping L5 3000/Tape&Reel L5 10000/Tape&Reel L6 3000/Tape&Reel L6 10000/Tape&Reel L7 3000/Tape&Reel L7 10000/Tape&Reel L2SC1623QLT1G S-L2SC1623QLT1G L2SC1623QLT3G S-L2SC1623QLT3G L2SC1623RLT1G S-L2SC1623RLT1G L2SC1623RLT3G S-L2SC1623RLT3G L2SC1623SLT1G S-L2SC1623SLT1G L2SC1623SLT3G S-L2SC1623SLT3G 1 2 SOT– 23 3 COLLECTOR 1 MAXIMUM RATINGS BASE Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V Emitter-Base Voltage VEBO 7 V IC 150 mAdc Symbol Max Unit 225 mW 1.8 mW/oC Rating Collector current-continuoun 2 EMITTER THERMAL CHARATEERISTICS Characteristic Total Device Dissipation FR-5 Board, (1) PD o TA=25 C o Derate above 25 C Thermal Resistance, Junction to Ambient R θJA Total Device Dissipation PD 556 o Alumina Substrate, (2) TA=25 C o Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage Temperature R θJA Tj ,Tstg o C/W 300 mW 2.4 mW/oC 417 -55 to +150 o C/W o C DEVICE MARKING L2SC1623QLT1G=L5 L2SC1623RLT1G=L6 L2SC1623SLT1G=L7 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) Characteristic Symbol Min Typ Max Unit - - 0.1 0.1 µA µA OFF CHARACTERISTICS Collector Cutoff Current (VCB=60V) Emitter Cutoff Current (VBE=5V) I I CBO EBO Rev.O 1/5 LESHAN RADIO COMPANY, LTD. L2SC1623QLT1G Series S-L2SC1623QLT1G Series ON CHARACTERISTICS DC Current Gain (IC=1.0mA, VCE=6V) Collector-Emitter Saturation Voltage (IC=100mA,IB=10mA) Base-Emitter Saturation Voltage (IC=100mA,IB=10mA) hFE Base -Emitter On Voltage IC=1mA,VCE=6.0V) 120 - 560 V CE(sat) - 0.15 0.3 V VBE(sat) - 0.86 1.0 V 0.55 0.62 0.65 V V BE SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (VCE=6.0V,IE =-10mA) Output Capacitance(VCE = 6V, IE=0, f=1.0MHz) Ft - 250 - MHz Cob - 3 - Pf hFE Values are classified as followes NOTE: * hFE Q 120~270 R 180~390 S 270~560 Rev.O 2/5 LESHAN RADIO COMPANY, LTD. L2SC1623QLT1G Series S-L2SC1623QLT1G Series Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics( ) 50 I C, COLLECTOR CURRENT (mA) 10 1 25°C – 55°C 50 T A = 100° C I C, COLLECTOR CURRENT (mA) 20 2 0.50mA 100 VCE= 6 V 0.5 T A = 25°C 80 60 40 20 0.2 0.1 0 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 0 –1.6 0.4 V BE , BASE TO EMITTER VOLTAGE(V) Fig.3 Grounded emitter output characteristics( ) 1.2 1.6 2.0 Fig.4 DC current gain vs. collector current ( ) 10 I C, COLLECTOR CURRENT (mA) 0.8 V CE , COLLECTOR TO EMITTER VOLTAGE (V) 500 h FE, DC CURRENT GAIN 8 6 4 2 200 100 50 20 0 0 4 8 12 16 10 20 0.2 0.5 V CE , COLLECTOR TO EMITTER VOLTAGE (V) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) h FE, DC CURRENT GAIN 200 100 50 20 10 0.2 0.5 1 2 5 10 20 50 I C, COLLECTOR CURRENT (mA) 100 200 2 5 10 20 50 100 200 Fig.6 Collector-emitter saturation voltage vs. collector current Fig.5 DC current gain vs. collector current ( ) 500 1 I C, COLLECTOR CURRENT (mA) 0.5 0.2 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 I C, COLLECTOR CURRENT (mA) Rev.O 3/5 LESHAN RADIO COMPANY, LTD. L2SC1623QLT1G Series S-L2SC1623QLT1G Series Fig.8 Collector-emitter saturation voltage vs. collector current ( ) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) 0.5 0.2 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 0.5 0.2 0.1 0.05 0.02 0.01 0.2 0.5 I C, COLLECTOR CURRENT (mA) 100 50 –5 –10 –20 –50 –100 I E, EMITTER CURRENT (mA) C ob , COLLECTOR OUTPUT CAPACITANCE( pF) C ib , EMITTER INPUT CAPACITANCE (pF) f r , TRANSITION FREQUENCY(MHz) 200 –2 5 10 20 50 100 Fig.10 Collector output capacitance vs.collector-base voltage Emitter inputcapacitance vs. emitter-base voltage 500 –1 2 I C, COLLECTOR CURRENT (mA) Fig.9 Gain bandwidth product vs. emitter current –0.5 1 20 10 5 2 1 0.2 0.5 1 2 5 10 20 50 V CB, COLLECTOR TO BASE VOLTAGE (V) V EB, EMITTER TO BASE VOLTAGE (V) C c-r bb, BASE COLLECTOR TIME CONSTANT( ps) Fig.11 Base-collector time constant vs.emitter current 200 100 50 20 10 –0.2 –0.5 –1 –2 –5 –10 I E, EMITTER CURRENT (mA) Rev.O 4/5 LESHAN RADIO COMPANY, LTD. L2SC1623QLT1G Series S-L2SC1623QLT1G Series SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 5/5
L2SC1623RLT1G 价格&库存

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L2SC1623RLT1G
  •  国内价格
  • 1+0.05582
  • 30+0.05390
  • 100+0.05197
  • 500+0.04812
  • 1000+0.04620
  • 2000+0.04504

库存:1420

L2SC1623RLT1G
    •  国内价格
    • 1+0.07534

    库存:18000

    L2SC1623RLT1G
      •  国内价格
      • 50+0.08888
      • 500+0.07175
      • 3000+0.06088
      • 6000+0.05518

      库存:5893