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L2SC2411KRLT1G

L2SC2411KRLT1G

  • 厂商:

    LRC(乐山无线电)

  • 封装:

    SOT-23

  • 描述:

    通用三极管 NPN Ic=500mA Vceo=32V hfe=180~390 P=225mW SOT23

  • 数据手册
  • 价格&库存
L2SC2411KRLT1G 数据手册
L2SC2411KRLT1G S-L2SC2411KRLT1G General Purpose Transistors NPN Silicon 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23 qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 3 COLLECTOR L2SC2411KRLT1G CR 3000/Tape&Reel L2SC2411KRLT3G CR 10000/Tape&Reel 1 BASE 2 EMITTER 3. MAXIMUM RATINGS(Ta = 25ºC) Symbol Limits Unit Collector–Emitter Voltage VCEO 32 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 5 Vdc IC 500 mAdc Symbol Limits Unit Parameter Collector Current — Continuous 4. THERMAL CHARACTERISTICS Parameter Total Device Dissipation, PD FR−5 Board (Note 1) @ TA = 25ºC 225 mW Derate above 25ºC 1.8 mW/ºC 556 ºC/W Thermal Resistance, RΘJA Junction–to–Ambient(Note 1) Junction and Storage temperature TJ,Tstg −55∼+150 ºC 1. FR–5 = 1.0×0.75×0.062 in. Leshan Radio Company, LTD. Rev.B Mar 2016 1/5 L2SC2411KRLT1G, S-L2SC2411KRLT1G General Purpose Transistors NPN Silicon 5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Collector–Emitter Breakdown Voltage (IC = 1 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 100 μAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 100 μAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) DC Current Gain Symbol VBR(CEO) VBR(CBO) VBR(EBO) ICBO IEBO (IE = -20mAdc, VCE=5Vdc, f = 100MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Leshan Radio Company, LTD. 32 - - Unit V V 40 - V 5 - μA - - 1 μA - - 1 180 - 390 V - - 0.4 - - 1.2 VBE(sat) (IC = 500 mAdc, IB = 50 mAdc) Current–Gain — Bandwidth Product Max. VCE(sat) (IC = 500 mAdc, IB = 50 mAdc) Base–Emitter Saturation Voltage Typ. HFE (IC = 100 mAdc, VCE = 3.0 Vdc) Collector–Emitter Saturation Voltage Min. fT Cob Rev.B Mar 2016 V MHz - 250 pF - 6 - 2/5 L2SC2411KRLT1G, S-L2SC2411KRLT1G General Purpose Transistors NPN Silicon 6.ELECTRICAL CHARACTERISTICS CURVES 0.16 1 IB=0.5mA 0.14 IB=0.4mA 0.12 IC,Collector Current (A) 0.1 IC,Collect Current(A) IB=0.45mA 0.01 150℃ 25℃ -55℃ 0.001 IB=0.35mA 0.10 IB=0.3mA 0.08 IB=0.25mA IB=0.2mA 0.06 IB=0.15mA 0.04 IB=0.1mA IB=0.05mA 0.02 0.0001 0.00 0 0.2 0.4 0.6 0.8 VBE,Base to Emitter Voltage(V) 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE,Collector to Emitter Voltage (V) IC vs. VCE IC vs. VBE 0.50 0.18 IB=2.0mA IC/IB=10 0.16 IB=1.8mA 0.40 IB=1.6mA 0.35 IB=1.4mA VCE(sat),Saturation Voltage(V) IC,Collector Current (A) 0.45 IB=1.2mA 0.30 IB=1.0mA 0.25 IB=0.8mA 0.20 IB=0.6mA 0.15 IB=0.4mA 0.10 IB=0.2mA 0.12 0.1 0.08 25℃ 0.06 0.04 -55℃ 0.02 0.05 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE,Collector to Emitter Voltage (V) 0 1.0E-04 1.0E-03 1.0E-02 1.0E-01 IC,Collector Current(A) 1.0E+00 VCE(sat) vs. IC IC vs. VCE Leshan Radio Company, LTD. 150℃ 0.14 Rev.B Mar 2016 3/5 L2SC2411KRLT1G, S-L2SC2411KRLT1G General Purpose Transistors NPN Silicon 6.ELECTRICAL CHARACTERISTICS CURVES(Con.) 500 1.2 IC/IB=10 1 150℃ 400 150℃ HFE,DC GAIN VBE(sat),Base-Emitter Voltage(V) 450 0.8 25℃ 0.6 350 300 250 200 -55℃ 0.4 25℃ -55℃ 150 100 0.2 50 0 1.0E-04 1.0E-03 1.0E-02 1.0E-01 IC,Collector Current(A) 1.0E+00 0 1.0E-04 1.0E-03 1.0E-02 1.0E-01 IC,Collector Current(A) 1.0E+00 DC Current Gain vs. IC VBE(sat) vs. IC 100 C,Capacitance (pF) Cib 10 Cob 1 0.5 5 VR,Reverse Voltage (V) 50 Capacitance Leshan Radio Company, LTD. Rev.B Mar 2016 4/5 L2SC2411KRLT1G, S-L2SC2411KRLT1G General Purpose Transistors NPN Silicon 7.OUTLINE AND DIMENSIONS SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI L Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 1 V 2 B S DIM G A B C D G H J K L S V C D H J K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 8.SOLDERING FOOTPRINT 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 Leshan Radio Company, LTD. inches mm Rev.B Mar 2016 5/5
L2SC2411KRLT1G 价格&库存

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L2SC2411KRLT1G
  •  国内价格
  • 1+0.06931
  • 30+0.06683
  • 100+0.06436
  • 500+0.05941
  • 1000+0.05693
  • 2000+0.05545

库存:1580

L2SC2411KRLT1G
    •  国内价格
    • 20+0.15585
    • 200+0.12442
    • 600+0.10703

    库存:1857

    L2SC2411KRLT1G
    •  国内价格
    • 20+0.13990
    • 100+0.12080
    • 300+0.10180
    • 800+0.07630
    • 3000+0.06360

    库存:51687