L2SC4617QT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Limits 60 50 7 0.15 Unit V V V A 1 2 3 L2SC4617XT1G PC 0.15 W SC-89 Tj Tstg 150 −55~+150 ˚C ˚C COLLECTOR 3 !Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 60 50 7 − − − 120 − − Typ. − − − − − − − 180 2.0 Max. − − − 0.1 0.1 0.5 560 − 3.5 Unit V V V µA µA V − MHz pF IC=50µA IC=1µA IE=50µA VCB=60V VEB=7V IC/IB=50mA/5mA VCE=6V, IC=1mA VCE=12V, IE=2mA, f=30MHz VCB=12V, IE=0A, f=1MHz 1 BASE Conditions 2 EMITTER !Device marking L2SC4617QT1G=BQ L2SC4617RT1G=BR L2SC4617ST1G=BS ! hFE values are classified as follows: Item hFE Q 120~270 R 180~390 S 270~560 ORDERING INFORMATION Device Marking Shipping L2SC4617QT1G L2SC4617QT3G L2SC4617RT1G L2SC4617RT3G L2SC4617ST1G L2SC4617ST3G BQ BQ BR BR BS BS 3000 Tape & Reel 10000 Tape & Reel 3000 Tape & Reel 10000 Tape & Reel 3000 Tape & Reel 10000 Tape & Reel 1/4 LESHAN RADIO COMPANY, LTD. L2SC4617XT1G !Electrical characterristic curves 50 100 VCE=6V COLLECTOR CURRENT : IC (mA) Ta=25°C COLLECTOR CURRENT : I C (mA) COLLECTOR CURRENT : IC (mA) 20 10 5 Ta=100°C 25°C −55°C 80 0.50mA mA 0.45 A 0.40m mA 0.35 0.30mA 10 Ta=25°C 30µA 27µA 24µA 21µA 8 60 0.25mA 0.20mA 6 18µA 15µA 12µA 9µA 6µA 3µA 2 1 0.5 0.2 0.1 0 40 0.15mA 0.10mA 4 20 0.05mA IB=0A 0 0.4 0.8 1.2 1.6 2.0 2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V) 0 0 4 8 IB=0A 12 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : V CE (V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics ( Ι ) Fig.3 Grounded emitter output characteristics ( ΙΙ ) COLLECTOR SATURATION VOLTAGE : V CE(sat) (V) 500 Ta=25°C 500 Ta=100°C VCE=5V 3V 1V VCE=5V 0.5 Ta=25°C DC CURRENT GAIN : hFE 200 DC CURRENT GAIN : hFE 200 25°C −55°C 0.2 IC/IB=50 20 10 100 100 0.1 0.05 50 50 0.02 20 10 0.2 20 10 0.2 0.5 1 2 5 10 20 50 100 200 0.5 1 2 5 10 20 50 100 200 0.01 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( Ι ) Fig.5 DC current gain vs. collector current ( ΙΙ ) Fig. 6 Collector-emitter saturation voltage vs. collector current 2/4 LESHAN RADIO COMPANY, LTD. L2SC4617XT1G COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 0.5 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) IC/IB=10 0.5 TRANSITION FREQUENCY : fT (MHz) IC/IB=50 500 Ta=25°C VCE=6V 0.2 Ta=100°C 25°C −55°C 0.2 0.1 0.05 0.1 0.05 Ta=100°C 25°C −55°C 200 0.02 100 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 0.01 0.2 0.5 1 2 5 10 20 50 100 200 50 −0.5 −1 −2 −5 −10 −20 −50 −100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( Ι ) Fig.8 Collector-emitter saturation voltage vs. collector current (ΙΙ) Fig.9 Gain bandwidth product vs. emitter current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 20 BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps) 10 Cib Ta=25°C f=1MHz IE=0A IC=0A 200 Ta=25°C f=32MHZ VCB=6V 100 5 50 2 Co 20 b 1 0.2 0.5 1 2 5 10 20 50 10 −0.2 −0.5 −1 −2 −5 −10 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) EMITTER CURRENT : IE (mA) Fig.10 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Fig.11 Base-collector time constant vs. emitter current 3/4 LESHAN RADIO COMPANY, LTD. L2SC4617XT1G SC-89 A -X- 3 1 2 B -Y- S K G 2 PL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C-01 OBSOLETE, NEW STANDARD 463C-02. MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF −−− −−− 10 _ −−− −−− 10 _ 1.50 1.60 1.70 INCHES NOM 0.063 0.034 0.028 0.011 0.020 BSC 0.021 REF 0.006 0.016 0.043 REF −−− −−− 0.063 D 0.08 (0.003) M 3 PL XY M C N J -TSEATING PLANE DIM A B C D G H J K L M N S MIN 0.059 0.030 0.024 0.009 0.004 0.012 −−− −−− 0.059 MAX 0.067 0.040 0.031 0.013 0.008 0.020 10 _ 10 _ 0.067 H H L G RECOMMENDED PATTERN OF SOLDER PADS 4/4