L2SK3018WT1G

L2SK3018WT1G S-L2SK3018WT1G N-channel MOSFET 100 mA, 30 V 1. FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. ● Low on-resistance. ● Fast switching speed. ● Easy to parallel. ● ESD>500V ● Low voltage drive (2.5V) makes this device ideal for portable equipment. ● Easily designed drive circuits. Drain (3) Gate(1) ∗ Gate 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking Protection Diode Source(2) Shipping L2SK3018WT1G KN 3000/Tape&Reel L2SK3018WT3G KN 10000/Tape&Reel Drain 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter KN Symbol Limits Unit Drain–Source Voltage VDSS 30 V 1 Gate-Source Voltage VGS ±20 V Gate Continuous ID ±100 Pulsed IDP(Note 1) PD(Note 2) ±400 mA KN M 200 mW Channel temperature Tch 150 ℃ Storage temperature Tstg -55~+150 ℃ Drain Current Total power dissipation (TC=25°C) M 3 2 Source = Device Code = Month Code 1.Pw≤10µs, Duty cycle≤1% 2 With each pin mounted on the recommended lands. Leshan Radio Company, LTD. Rev.B Jun 2018 1/5 L2SK3018WT1G, S-L2SK3018WT1G N-channel MOSFET 4. ELECTRICAL CHARACTERISTICS (Ta= 25ºC) Characteristic Symbol Gate-source leakage IGSS (VGS = ±20V, VDS = 0V) Drain–Source Breakdown Voltage VBRDSS (VGS = 0, ID = 10μA) Zero Gate Voltage Drain Current Min. Typ. Max. - - ±1 V 30 - Gate Threshold Voltage VGS(th) (VDS = 3V, ID = 100µA) μA IDSS (VGS = 0, VDS = 30 V) 1 V 0.8 - 1.5 Static Drain–Source On–State Resistance Ω RDS(on) (ID = 10mA, VGS = 4V) (ID = 1mA, VGS = 2.5V) Forward transfer admittance ｜Yfs｜ (VDS = 3V, ID = 10mA) Input Capacitance Ciss (VDS = 5 V, VGS = 0, f = 1.0 MHz) Output Capacitance Coss (VDS = 5 V, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 5 V, VGS = 0, f = 1.0 MHz) Turn–On Delay Time (VDD =5 V, ID = Rise Time 10mA,VGS=5V,RL = Turn–Off Delay Time 500 Ω,RG = 10 Ω) Fall Time Leshan Radio Company, LTD. Unit μA Rev.B Crss - 5 8 - 7 13 mS 20 - pF - 13 pF - 9 pF - 4 - td(on) - 15 - tr - 35 - td(off) - 80 - tf - 80 - Jun 2018 ns 2/5 L2SK3018WT1G, S-L2SK3018WT1G N-channel MOSFET 5.ELECTRICAL CHARACTERISTICS CURVES 0.16 0.1 VGS=3V,3.5V,4V 0.14 VDS=3V 0.09 Ta=25℃ 0.08 0.07 VGS=2.5V 0.1 ID,Drain Current(A) ID,Drain Current(A) 0.12 0.08 0.06 VGS=2V 0.04 0.06 25℃ 0.05 0.04 0.03 -55℃ 150℃ 0.02 0.02 0.01 VGS=1.5V 0 0 1 2 3 4 VDS，Drain to Source Voltage(V) 0 5 0 1 2 VGS,Gate to Source Voltage(V) 3 ID vs. VGS ID vs. VDS 30 0.1 RDS(on) On resistance (Ω) IS,Diode FOrward Current(A) 25 0.01 150℃ 25℃ -55℃ 0.001 20 15 VGS=2.5V 10 VGS=4V 5 0.0001 0 0 0.2 0.4 0.6 0.8 VSD,Diode Forward Voltage(V) 1 0 IS vs. VSD Leshan Radio Company, LTD. 0.02 0.04 0.06 ID,Drain Current(A) 0.08 0.1 RDS(on) vs. ID Rev.B Jun 2018 3/5 L2SK3018WT1G, S-L2SK3018WT1G N-channel MOSFET 5.ELECTRICAL CHARACTERISTICS CURVES(Con.) 1.4 7.5 7 ID=0.1mA VGS=4V,ID=100mA 6 5.5 5 VGS=4V,ID=50mA 4.5 4 VGSTH,Threshold Voltage(V) RDS(on),ON Resistance (Ω) 1.3 6.5 3.5 1.2 1.1 1 0.9 3 2.5 0.8 -50 -25 0 25 50 75 100 Tj,Temperature(℃) 125 150 -50 -25 0 25 50 75 100 Tj,Temperature(℃) 125 150 VGSTH vs. Tj RDS(on) vs. Tj 35 f=1MHz Ta=25℃ 30 C-Capacitance(pF) 25 20 15 Ciss 10 Coss 5 Crss 0 0 5 10 15 VDS,Drain to Source Voltage(V) 20 Capacitance Leshan Radio Company, LTD. Rev.B Jun 2018 4/5 L2SK3018WT1G, S-L2SK3018WT1G N-channel MOSFET 6.OUTLINE AND DIMENSIONS SC70 DIM MIN NOR MAX A 0.80 0.95 1.00 A1 0.00 0.05 0.7 REF 0.10 b 0.30 0.35 0.40 A2 c 0.10 0.15 0.25 D 1.80 2.05 2.20 E 1.15 1.30 1.35 e 1.20 1.30 1.40 e1 0.65 BSC L 0.20 0.35 0.56 He 2.00 2.10 2.40 ALL Dimension in mm 7.SOLDERING FOOTPRINT SC70 Leshan Radio Company, LTD. Rev.B Jun 2018 DIM MIN A 1.90 B 0.65 C 0.65 X 0.70 Y 0.90 5/5