L2SK801LT1G

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 310 mAmps, 60 Volts L2SK801LT1G N–Channel SOT–23 3 • Pb−Free Package is Available. 1 2 MAXIMUM RATINGS Rating CASE 318, STYLE 21 SOT– 23 (TO–236AB) Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 60 Vdc Drain Current – Continuous TC = 25°C (Note 1.) – – Continuous Pulse t < 10us ID 310 mAdc IDM 1200 VGS VGSM ±20 ±40 Vdc Vpk Symbol Max Unit PD 225 1.8 mW mW/°C Thermal Resistance, Junction to Ambient RθJA 556 °C/W Total Device Dissipation Alumina Substrate,(Note 3.) TA = 25°C Derate above 25°C PD 300 mW mW/°C Thermal Resistance, Junction to Ambient RθJA 417 °C/W Drain TJ, Tstg –ā55 to +150 °C 3 Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) 310 mAMPS 60 VOLTS R DS(on) = 1.5 W V GS(th) = 1.8 V N - Channel 3 THERMAL CHARACTERISTICS Junction and Storage Temperature 2.4 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. FR–5 = 1.0 x 0.75 x 0.062 in. 3. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. 1 2 MARKING DIAGRAM & PIN ASSIGNMENT 801 1 M Characteristic Total Device Dissipation FR–5 Board (Note 2.) TA = 25°C Derate above 25°C 2 Gate Source 801 M = Device Code = Month Code ORDERING INFORMATION Device Marking Shipping L2SK801LT1G 801 3000 Tape & Reel L2SK801LT3G 801 10000 Tape & Reel Rev .O 1/4 LESHAN RADIO COMPANY, LTD. L2SK801LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 60 – – Vdc IDSS – – – – 1.0 500 µAdc Gate–Body Leakage Current, Forward (VGS = 20 Vdc) IGSSF – – 100 nAdc Gate–Body Leakage Current, Reverse (VGS = –ā20 Vdc) IGSSR – – –100 nAdc VGS(th) 1.0 1.8 2.2 Vdc ID(on) 500 – – mA – – – – 3.75 0.375 – 1.5 2.5 – 1.7 2.5 gFS 80 – – mmhos Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss – 17 50 pF Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss – 10 25 pF Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss – 2.5 5.0 pF td(on) – 7 20 ns td(off) – 11 40 ns VSD – – –1.5 Vdc IS – – –115 mAdc ISM – – –800 mAdc OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) TJ = 25°C TJ = 125°C ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) On–State Drain Current (VDS ≥ 2.0 VDS(on), VGS = 10 Vdc) Static Drain–Source On–State Voltage (VGS = 10 Vdc, ID = 500 mAdc) (VGS = 5.0 Vdc, ID = 50 mAdc) VDS(on) Static Drain–Source On–State Resistance (VGS = 10 V, ID = 500 mAdc) rDS(on) (VGS = 5.0 Vdc, ID = 50 mAdc) Forward Transconductance (VDS ≥ 2.0 VDS(on), ID = 200 mAdc) Vdc Ohms DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time Turn–Off Delay Time (V DD = 25 Vdc , ID ^ 500 mAdc, RG = 25 Ω, RL = 50 Ω, Vgen = 10 V) BODY–DRAIN DIODE RATINGS Diode Forward On–Voltage (IS = 115 mAdc, V GS = 0 V) Source Current Continuous (Body Diode) Source Current Pulsed 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. Rev .O 2/4 LESHAN RADIO COMPANY, LTD. L2SK801LT1G TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1.0 VDS = 10 V TA = 25°C 1.6 1.4 9V 1.2 8V 1.0 7V 0.8 6V 0.6 0.4 5V 0.2 4V 3V 0 0.8 VGS = 10 V ID, DRAIN CURRENT (AMPS) I D, DRAIN CURRENT (AMPS) 1.8 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 9.0 125°C 0.6 0.4 0.2 0 10 2.4 2.2 1.8 VGS = 10 V ID = 200 mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -ā60 -ā20 +ā20 +ā60 T, TEMPERATURE (°C) 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 Figure 2. Transfer Characteristics VGS(th), THRESHOLD VOLTAGE (NORMALIZED) r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) Figure 1. Ohmic Region 2.0 25°C -ā55°C +ā100 Figure 3. Temperature versus Static Drain–Source On–Resistance +ā140 1.2 1.05 VDS = VGS ID = 1.0 mA 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 -ā60 -ā20 +ā20 +ā60 T, TEMPERATURE (°C) +ā100 +ā140 Figure 4. Temperature versus Gate Threshold Voltage Rev .O 3/4 LESHAN RADIO COMPANY, LTD. L2SK801LT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 A B C D G H J G C D MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0034 0.0140 0.0350 0.0830 0.0177 0.0070 0.0285 0.0401 0.1039 0.0236 DIM B S H K J K L S V MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.35 0.89 2.10 0.45 0.177 0.69 1.02 2.64 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev .O 4/4