L74VHC1G02

LESHAN RADIO COMPANY., LTD 2–Input NOR Gate L74VHC1G02 The L74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The L74VHC1G02 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the L74VHC1G02 to be used to interface 5 V circuits to 3 V circuits. • High Speed: t PD = 3.0 ns (Typ) at V CC = 5 V • Low Power Dissipation: I CC = 2 mA (Max) at T A = 25°C • Power Down Protection Provided on Inputs • Balanced Propagation Delays • Pin and Function Compatible with Other Standard Logic Families • Chip Complexity: FETs = 56; Equivalent Gates = 14 MARKING DIAGRAMS 5 4 1 2 3 V3d SC–88A / SOT–353/SC–70 DF SUFFIX Pin 1 d = Date Code 5 4 Figure 1. Pinout (Top View) 1 2 3 V3d Figure 2. Logic Symbol Pin 1 d = Date Code TSOP–5/SOT–23/SC–59 DT SUFFIX FUNCTION TABLE PIN ASSIGNMENT IN B 1 2 3 4 5 IN A GND OUT Y V CC Inputs A L L H H B L H L H Output Y H L L L ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. 1/6 LESHAN RADIO COMPANY., LTD L74VHC1G02 MAXIMUM RATINGS Value Unit – 0.5 to + 7.0 V – 0.5 to 7.0 V V CC=0 – 0.5 to 7.0 V High or Low State –0.5 to V cc + 0.5 I IK Input Diode Current –20 mA I OK Output Diode Current V OUT < GND; V OUT > V CC +20 mA I OUT DC Output Current, per Pin + 25 mA I CC DC Supply Current, V CC and GND +50 mA PD Power dissipation in still air SC–88A, TSOP–5 200 mW θ JA Thermal resistance SC–88A, TSOP–5 333 °C/W TL Lead Temperature, 1 mm from Case for 10 s 260 °C TJ Junction Temperature Under Bias + 150 °C T stg Storage temperature –65 to +150 °C V ESD ESD Withstand Voltage Human Body Model (Note 2) >2000 V Machine Model (Note 3) > 200 Charged Device Model (Note 4) N/A Latch–Up Performance Above V CC and Below GND at 125°C (Note 5) ± 500 mA I LATCH–UP 1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions. 2. Tested to EIA/JESD22–A114–A 3. Tested to EIA/JESD22–A115–A 4. Tested to JESD22–C101–A 5. Tested to EIA/JESD78 DC Supply Voltage DC Input Voltage DC Output Voltage RECOMMENDED OPERATING CONDITIONS Symbol Parameter V CC DC Supply Voltage V IN DC Input Voltage V OUT DC Output Voltage TA Operating Temperature Range t r ,t f Input Rise and Fall Time Symbol V CC V IN V OUT Parameter V CC = 3.3 ± 0.3 V V CC = 5.0 ± 0.5 V Min 2.0 0.0 0.0 – 55 0 0 Max 5.5 5.5 V CC + 125 100 20 Unit V V V °C ns/V DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES Junction Temperature °C 80 90 100 110 120 130 140 Time, Hours 1,032,200 419,300 178,700 79,600 37,000 17,800 8,900 Time, Years 117.8 47.9 20.4 9.4 4.2 2.0 1.0 NORMALIZED FAILURE RATE 1 1 10 100 1000 TIME, YEARS Figure 3. Failure Rate vs. Time Junction Temperature 2/6 LESHAN RADIO COMPANY., LTD L74VHC1G02 DC ELECTRICAL CHARACTERISTICS V Symbol V IH Parameter Minimum High–Level Input Voltage Test Conditions CC T A = 25°C Min 1.5 2.1 3.15 3.85 0.5 0.9 1.35 1.65 1.9 2.9 4.4 2.58 3.94 0.0 0.0 0.0 0.1 0.1 0.1 0.36 0.36 ±0.1 2.0 2.0 3.0 4.0 Typ Max T A < 85°C –55°C