L74VHC1G09

LESHAN RADIO COMPANY, LTD. 2-Input AND Gate with Open Drain Output L74VHC1G09 The L74VHC1G09 is an advanced high speed CMOS 2–input AND gate with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including an open drain output which provides the capability to set output switching level. This allows the LMC74VHC1G09 to be used to interface 5 V circuits to circuits of any voltage between V CC and 7 V using an external resistor and power supply. The L74VHC1G09 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. • High Speed: t PD = 4.3 ns (Typ) at V CC = 5 V • Low Internal Power Dissipation: I CC = 2 mA (Max) at T A = 25°C • Power Down Protection Provided on Inputs • Pin and Function Compatible with Other Standard Logic Families • Chip Complexity: FETs = 62; Equivalent Gates = 16 MARKING DIAGRAMS 5 4 1 2 3 VXd SC–88A/SOT–353/SC–70 DF SUFFIX Pin 1 d = Date Code 5 4 Figure 1. Pinout (Top View) 1 2 3 VXd Figure 2. Logic Symbol Pin 1 d = Date Code TSOP–5/SOT–23/SC–59 DT SUFFIX FUNCTION TABLE PIN ASSIGNMENT 1 2 3 4 5 IN B IN A GND OUT Y V CC A L L H H Inputs B L H L H Output Y L L L Z ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. 1/6 LESHAN RADIO COMPANY, LTD. L74VHC1G09 MAXIMUM RATINGS Symbol V CC V IN V OUT I IK I OK I OUT I CC PD θ JA TL TJ T stg V ESD Parameter DC Supply Voltage DC Input Voltage DC Output Voltage Input Diode Current Output Diode Current V OUT < GND; V OUT > V CC DC Output Current, per Pin DC Supply Current, V CC and GND Power dissipation in still air SC–88A, TSOP–5 Thermal resistance SC–88A, TSOP–5 Lead Temperature, 1 mm from Case for 10 s Junction Temperature Under Bias Storage temperature ESD Withstand Voltage Human Body Model (Note 2) Machine Model (Note 3) Charged Device Model (Note 4) Value – 0.5 to + 7.0 – 0.5 to +7.0 – 0.5 to +7.0 –20 +20 + 25 +50 200 333 260 + 150 –65 to +150 >2000 > 200 N/A Unit V V V mA mA mA mA mW °C/W °C °C °C V I LATCH–UP Latch–Up Performance Above V CC and Below GND at 125°C (Note 5) ± 500 mA 1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions. 2. Tested to EIA/JESD22–A114–A 3. Tested to EIA/JESD22–A115–A 4. Tested to JESD22–C101–A 5. Tested to EIA/JESD78 RECOMMENDED OPERATING CONDITIONS Symbol Parameter V CC DC Supply Voltage V IN DC Input Voltage V OUT DC Output Voltage TA Operating Temperature Range t r ,t f Input Rise and Fall Time V CC = 3.3 ± 0.3 V V CC = 5.0 ± 0.5 V Min 2.0 0.0 0.0 – 55 0 0 Max 5.5 5.5 7.0 + 125 100 20 Unit V V V °C ns/V DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES Junction Temperature °C 80 90 100 110 120 130 140 Time, Hours 1,032,200 419,300 178,700 79,600 37,000 17,800 8,900 Time, Years 117.8 47.9 20.4 9.4 4.2 2.0 1.0 NORMALIZED FAILURE RATE 1 1 10 100 1000 TIME, YEARS Figure 3. Failure Rate vs. Time Junction Temperature 2/6 LESHAN RADIO COMPANY, LTD. L74VHC1G09 DC ELECTRICAL CHARACTERISTICS V Symbol V IH Parameter Minimum High–Level Input Voltage Test Conditions CC T A = 25°C Min 1.5 2.1 3.15 3.85 0.5 0.9 1.35 1.65 1.9 2.9 4.4 2.58 3.94 0.0 0.0 0.0 0.1 0.1 0.1 0.36 0.36 ±0.1 2.0 0.25 T A < 85°C –55°C