L8050HQLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8050HQLTIG Series S-L8050HQLTIG Series FEATURE ƽHigh current capacity in compact package. IC =1.5 A. ƽEpitaxial planar type. 3 ƽNPN complement: L8050H ƽPb-Free Package is available. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 2 SOT–23 DEVICE MARKING AND ORDERING INFORMATION Device COLLECTOR 3 Shipping Marking L8050HPLT1G S-L8050HPLT1G 1HA 3000/Tape&Reel L8050HPLT3G S-L8050HPLT3G 1HA 10000/Tape&Reel L8050HQLT1G S-L8050HQLT1G 1HC 3000/Tape&Reel L8050HQLT3G S-L8050HQLT3G 1HC 10000/Tape&Reel L8050HRLT1G S-L8050HRLT1G 1HE 3000/Tape&Reel L8050HRLT3G S-L8050HRLT3G 1HE 10000/Tape&Reel L8050HSLT1G S-L8050HSLT1G 1HG 3000/Tape&Reel L8050HSLT3G S-L8050HSLT3G 1HG 10000/Tape&Reel 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol Max Unit VCEO VCBO VEBO IC 25 40 5 1500 V V V mAdc THERMAL CHARACTERISTICS Characteristic Max Unit TA=25°C 225 mW Derate above 25°C 1.8 mW/°C 556 °C/W Alumina Substrate,(2) TA=25°C 300 mW Derate above 25°C 2.4 mW/°C R θJ A 417 °C/W T j,T St g -55 to +150 °C Total Device Dissipation FR-5 Board,(1) Thermal Resistance,Junction to Ambient Total Device Dissipation Thermal Resistance,Junction to Ambient Junction and Storage Temperature Symbol PD R θJ A PD 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Rev.A 1/3 LESHAN RADIO COMPANY, LTD. L8050HQLTIG Series S-L8050HQLTIG Series ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)CEO 25 – – V V(BR)EBO 5 – – V V(BR)CBO 40 – – V Collector Cutoff Current (VCB=35V) ICBO – – 150 nA Emitter Cutoff Current (VEB=4V) IEBO – – 150 nA Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC=1.0mA) Emitter-Base Breakdown Voltage (IE=100µΑ) Collector-Base Breakdown Voltage (IC=100µΑ) ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Characteristic Symbol Min hFE 100 - 600 - - 0.5 ON CHARACTERISTICS DC Current Gain IC=100mA,VCE=1V Collector-Emitter Saturation Voltage (IC=800mA IB=80mA) NOTE : VCE(S) * P Q hF E 100~200 150~300 R 200~400 V S 300~600 Rev.A 2/3 LESHAN RADIO COMPANY, LTD. L8050HQLTIG Series S-L8050HQLTIG Series SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 G C D INCHES DIM B S H K J MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 A B C D G H J K L S V MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN 2.80 1.20 0.89 0.37 1.78 0.013 0.085 0.35 0.89 2.10 0.45 MAX 3.04 1.40 1.11 0.50 2.04 0.100 0.177 0.69 1.02 2.64 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.A 3/3