L8050QLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L8050PLT1G Series S-L8050PLT1G Series FEATURE ƽHigh current capacity in compact package. IC = 0.8A. ƽEpitaxial planar type. 3 ƽNPN complement: L8050 ƽPb-Free Package is available. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 2 SOT–23 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping COLLECTOR 3 L8050PLT1G S-L8050PLT1G 80P 3000/Tape&Reel L8050PLT3G S-L8050PLT3G 80P 10000/Tape&Reel L8050QLT1G S-L8050QLT1G 1YC 3000/Tape&Reel L8050QLT3G S-L8050QLT3G 1YC 10000/Tape&Reel L8050RLT1G S-L8050RLT1G 1YE 3000/Tape&Reel L8050RLT3G S-L8050RLT3G 1YE 10000/Tape&Reel L8050SLT1G S-L8050SLT1G 80S 3000/Tape&Reel L8050SLT3G S-L8050SLT3G 80S 10000/Tape&Reel 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-continuoun VCEO VCBO VEBO IC 25 40 5 800 V V V mAdc THERMAL CHARACTERISTICS Characteristic Max Unit TA=25°C 225 mW Derate above 25°C 1.8 mW/°C 556 °C/W Alumina Substrate,(2) TA=25°C 300 mW Derate above 25°C 2.4 mW/°C R θJ A 417 °C/W T j,T St g -55 to +150 °C Total Device Dissipation FR-5 Board,(1) Thermal Resistance,Junction to Ambient Total Device Dissipation Thermal Resistance,Junction to Ambient Junction and Storage Temperature Symbol PD R θJ A PD 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Rev.O 1/4 LESHAN RADIO COMPANY, LTD. L8050PLT1G Series S-L8050PLT1G Series ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)CEO 25 – – V V(BR)EBO 5 – – V V(BR)CBO 40 – – V Collector Cutoff Current (VCB=35V) ICBO – – 150 nA Emitter Cutoff Current (VEB=4V) IEBO – – 150 nA OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC=1.0mA) Emitter-Base Breakdown Voltage (IE=100µΑ) Collector-Base Breakdown Voltage (IC=100µΑ) ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Charateristic Symbol Min hFE 100 VCE(sat) - Typ Max Unit DC Current Gain IC=100mA,VCE=1V - 600 Collector-Emitter Saturation Voltage (IC=800mA, IB =80mA) NOTE : * P Q hF E 100~200 150~300 R 200-400 - 0.5 V S 300-600 Rev.O 2/4 LESHAN RADIO COMPANY, LTD. L8050PLT1G Series S-L8050PLT1G Series FIG.1 - Current Gain & Collector Current FIG.2 - Saturation Voltage & Collector Current 1 1000 Saturation Voltage (V) VCE=1V hFE 100 10 0.1 VCE(sat) @ IC=10IB 1 0.001 0.01 0.01 0.1 1 10 100 0.01 1000 Collector Current (mA) 0.1 1 10 100 1000 Collector Current (mA) FIG.3 - On Voltage & Collector Current FIG.4 - Cutoff Frequency & Collector Current 1000 1 Cutoff Frequency (MHz) VCE=10V On Voltage (V) VBE(ON) @ VCE=1V 0.1 100 10 1 0.01 0.1 1 10 100 1000 1 10 100 1000 Collector Current (mA) Collector Current (mA) FIG.5 - Capacitance & Reverse-Biased Voltage Capacitance (pF) 100 10 Cob 1 0.1 1 10 100 Reverse-Biased Voltage (V) Rev.O 3/4 LESHAN RADIO COMPANY, LTD. L8050PLT1G Series S-L8050PLT1G Series SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 DIM B S G C D H K J MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 A B C D G H J K L S V INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 4/4