L8550HQLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L8550HPLT1G Series S-L8550HPLT1G Series FEATURE ƽHigh current capacity in compact package. ƽEpitaxial planar type. ƽPNP complement: L8550H 3 ƽWe declare that the material of product compliance with RoHS requirements. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 2 SOT–23 DEVICE MARKING AND ORDERING INFORMATION Device COLLECTOR 3 Shipping Marking L8550HPLT1G s-L8550HPLT1G 1HB 3000/Tape&Reel L8550HPLT3G s-L8550HPLT3G 1HB 10000/Tape&Reel L8550HQLT1G s-L8550HQLT1G 1HD 3000/Tape&Reel L8550HQLT3G s-L8550HQLT3G 1HD 10000/Tape&Reel L8550HRLT1G s-L8550HRLT1G 1HF 3000/Tape&Reel L8550HRLT3G s-L8550HRLT3G 1HF 10000/Tape&Reel L8550HSLT1G s-L8550HSLT1G 1HH 3000/Tape&Reel L8550HSLT3G s-L8550HSLT3G 1HH 10000/Tape&Reel 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol Max Unit VCEO VCBO VEBO IC -25 -40 V V -5 -1500 V mAdc THERMAL CHARACTERISTICS Characteristic Max Unit TA=25°C 225 mW Derate above 25°C 1.8 mW/°C 556 °C/W Alumina Substrate,(2) TA=25°C 300 mW Derate above 25°C 2.4 mW/°C R θJ A 417 °C/W T j,T St g -55 to +150 °C Total Device Dissipation FR-5 Board,(1) Thermal Resistance,Junction to Ambient Total Device Dissipation Thermal Resistance,Junction to Ambient Junction and Storage Temperature Symbol PD R θJ A PD 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Rev.A 1/3 LESHAN RADIO COMPANY, LTD. L8550HPLT1G Series S-L8550HPLT1G Series ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)CEO -25 – – V V(BR)EBO -5 – – V V(BR)CBO -40 – – V Collector Cutoff Current (VCB=-35V) ICBO – – -150 nA Emitter Cutoff Current (VEB=-4V) IEBO – – -150 nA Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC=-1.0mA) Emitter-Base Breakdown Voltage (IE=-100 µΑ) Collector-Base Breakdown Voltage (IC=-100 µΑ) ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Characteristic Symbol Min ON CHARACTERISTICS DC Current Gain IC=-100mA,VCE =-1V H FE 100 - 600 - - -0.5 Collector-Emitter Saturation Voltage (IC=-800mA,I B =-80mA) NOTE : VCE(S) * P Q hF E 100~200 150~300 R 200~400 V S 300~600 Rev.A 2/3 LESHAN RADIO COMPANY, LTD. L8550HPLT1G Series S-L8550HPLT1G Series SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 G C D INCHES DIM B S H K J MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 A B C D G H J K L S V MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN 2.80 1.20 0.89 0.37 1.78 0.013 0.085 0.35 0.89 2.10 0.45 MAX 3.04 1.40 1.11 0.50 2.04 0.100 0.177 0.69 1.02 2.64 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.A 3/3