L8550QLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon FEATURE We declare that the material of product compliance with RoHS requirements. L8550PLT1G Series S-L8550PLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking SOT– 23 Shipping L8550PLT1G s-L8550PLT1G 85P 3000/Tape&Reel L8550PLT3G s-L8550PLT3G 85P 10000/Tape&Reel L8550QLT1G s-L8550QLT1G 1YD 3000/Tape&Reel L8550QLT3G s-L8550QLT3G 1YD 10000/Tape&Reel L8550RLT1G s-L8550RLT1G 1YF 3000/Tape&Reel L8550RLT3G s-L8550RLT3G 1YF 10000/Tape&Reel L8550SLT1G s-L8550SLT1G 1YH 3000/Tape&Reel L8550SLT3G s-L8550SLT3G 1YH 10000/Tape&Reel COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base voltage Emitter-base Voltage Collector current-continuoun Symbol V CEO V CBO V EBO IC Value -25 -40 -5 -800 Unit V V V mAdc Symbol PD Max Unit 225 1.8 556 mW mW /°C °C/W THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (1) T A = 25 °C Derate above 25 °C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25 °C Derate above 25 °C Thermal Resistance, Junction to Ambient Junction and Storage Temperature R θJA PD R θJA T J , T stg 300 mW 2.4 mW /°C 417 °C/W -55 to +150 °C 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Rev.O 1/4 LESHAN RADIO COMPANY, LTD. L8550PLT1G Series S-L8550PLT1G Series ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V (BR)CEO -25 – – V V (BR)EBO -5 – – V V (BR)CBO -40 – – V OFFCHARACTERISTICS Collector-Emitter Breakdown Voltage (I C =-1.0mA) Emitter-Base Breakdown Voltage (I E = -100 µA) Collector-Base Breakdown voltage (I C= -100 µA) Collector Cutoff Current (VCB = -35 V) Emitter Cutoff Current (VEB = -4V) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. ON CHARACTERISTICS Characteristic DC Current Gain (I C =-100mA, VCE=-1V) Collector-Emitter Saturation Voltage (I C =-800mA, IB =-80mA) NOTE: * hFE – – -150 nA – – -150 nA Symbol Min Typ Max H FE 100 – 600 VCE(S) – – -0.5 I CBO I EBO P Q R S 100~200 150~300 200~400 300~600 Unit V Rev.O 2/4 LESHAN RADIO COMPANY, LTD. L8550PLT1G Series S-L8550PLT1G Series Rev.O 3/4 LESHAN RADIO COMPANY, LTD. L8550PLT1G Series S-L8550PLT1G Series SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 DIM B S G C D H K J MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 A B C D G H J K L S V INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 4/4